A voltage reduction technique for battery-operated systems

Two techniques for voltage reduction are presented, both of which can significantly reduce the power consumption of digital CMOS circuits. The fixed reduction of voltage is applicable to small systems with a low initial consumption, however, the optimum voltage is not reached and the correct operation of the circuit is not guaranteed. The self-adjusted reduction of voltage is adapted to bigger digital systems. The correct operation of the digital circuit is guaranteed, and the supply voltage is near the optimum for the speed requirements. This technique is more versatile, accurate, and reliable than the fixed one     

Nichtstationäre eindimensionale Gasbewegung

Zusammenfassung Herleitung eines Charakteristiken-Verfahrens aus der Riemannschen Theorie zur n?herungsweisen zeichnerischen Behandlung im Zeit-, Weg-Diagramm. Praktische Anwendung auf Rohrschwingungen endlicher Amplitude und auf das Ausstr?men aus Druckbeh?ltern mit Ansatzrohr.     

Titanium-aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology

High-k insulators for the next generation (sub-32 nm CMOS (complementary metal-oxide-semiconductor) technology), such as titanium-aluminum oxynitride (TAON) and titanium-aluminum oxide (TAO), have been obtained by Ti/Al e-beam evaporation, with additional electron cyclotron resonance (ECR) plasma oxynitridation and oxidation on Si substrates, respectively. Physical thickness values between 5.7 and 6.3 nm were determined by ellipsometry. These films were used as gate insulators in MOS capacitors fabricated with Al electrodes, and they were used to obtain capacitance-voltage (C-V) measurements. A relative dielectric constant of 3.9 was adopted to extract the equivalent oxide thickness (EOT) of films from C-V curves under strong accumulation condition, resulting in values between 1.5 and 1.1 nm, and effective charge densities of about 10¹¹ cm⁻². Because of these results, nMOSFETs with Al gate electrode and TAON gate dielectric were fabricated and characterized by current-voltage (I-V) curves. From these nMOSFETs electrical characteristics, a sub-threshold slope of 80 mV/dec and an EOT of 0.87 nm were obtained. These results indicate that the obtained TAON film is a suitable gate insulator for the next generation (MOS) devices.     

Exposure to environmental and mainstream tobacco smoke and risk of spontaneous abortion

The present nationwide, multicenter clinical study was carried out in 26 departments of surgery to define the incidence and attendant mortality of intestinal infarction following abdominal aortic surgery, and to identify patients at risk of it. The data consist of 1752 patients who underwent abdominal aortic reconstruction during 1991-1993 as recorded in the Finnish national vascular registry (FINNVASC). Among the 1752 operations, 27 patients treated at 14 different hospitals had intestinal ischemia, and the complete patient records of all 27 cases were reanalyzed. The incidence of bowel infarction was 1.2%. Among patients operated on for a ruptured aneurysm it was 3.1%, whereas 1.0% of patients with nonruptured aneurysm and 0.6% of those operated on for aortoiliac occlusive disease developed intestinal infarction. In 14 patients (67%) the lesion affected the left colon. The overall 30-day mortality rate was 13% but reached 67% among those with intestinal infarction. We conclude that acute intestinal ischemia with bowel infarction is an infrequent but serious complication of abdominal aortic surgery. It is mainly related to surgery due to aneurysmal disease, and patients with occlusive aortoiliac disease present ischemic complications in the intestines less often. Hypotensive patients being treated for ruptured aneurysm are at greatest risk of intestinal ischemia.     

GS32, a novel Golgi SNARE of 32 kDa, interacts preferentially with syntaxin 6

Syntaxin 1, synaptobrevins or vesicle-associated membrane proteins, and the synaptosome-associated protein of 25 kDa (SNAP-25) are key molecules involved in the docking and fusion of synaptic vesicles with the presynaptic membrane. We report here the molecular, cell biological, and biochemical characterization of a 32-kDa protein homologous to both SNAP-25 (20% amino acid sequence identity) and the recently identified SNAP-23 (19% amino acid sequence identity). Northern blot analysis shows that the mRNA for this protein is widely expressed. Polyclonal antibodies against this protein detect a 32-kDa protein present in both cytosol and membrane fractions. The membrane-bound form of this protein is revealed to be primarily localized to the Golgi apparatus by indirect immunofluorescence microscopy, a finding that is further established by electron microscopy immunogold labeling showing that this protein is present in tubular-vesicular structures of the Golgi apparatus. Biochemical characterizations establish that this protein behaves like a SNAP receptor and is thus named Golgi SNARE of 32 kDa (GS32). GS32 in the Golgi extract is preferentially retained by the immobilized GST-syntaxin 6 fusion protein. The coimmunoprecipitation of syntaxin 6 but not syntaxin 5 or GS28 from the Golgi extract by antibodies against GS32 further sustains the preferential interaction of GS32 with Golgi syntaxin 6.     

Silk-elastinlike protein polymer hydrogels: Influence of monomer sequence on physicochemical properties

Silk-elastinlike protein polymer, SELP-815K, with eight silk and fifteen elastin units and a lysine (K) modified elastin, was genetically engineered with longer silk and elastin units compared to existing hydrogel forming analogs (SELP-415K and SELP-47K). Hydrogels of the three SELPs (with similar MWs) were investigated for their structure-function relationships. Results indicate that equilibrium swelling ratio in these hydrogels is a function of polymer structure, concentration, cure time and ionic strength of media. Swelling was not influenced by the changes in pH. Storage moduli observed by dynamic mechanical analysis and the Debye-Bueche correlation length obtained from small-angle neutron scattering provided structural insight that suggests the cross-linking densities in these hydrogels follow the order SELP-47K > SELP-815K > SELP-415K. These results allude to the importance of the length of elastin blocks in governing the spacing of the cross-linked hydrogel network and that of silk in governing the stiffness of their 3-dimensional structures.