Optimal buffered compression and coding mode selection for MPEG-4shape coding

We propose an optimal buffered compression algorithm for shape coding as defined in the forthcoming MPEG-4 international standard. The MPEG-4 shape coding scheme consists of two steps: first, distortion is introduced by down and up scaling; then, context-based arithmetic encoding is applied. Since arithmetic coding is "lossless," the down up scaling step is considered as a virtual quantizer. We first formulate the buffer-constrained adaptive quantization problem for shape coding, and then propose an algorithm for the optimal solution under buffer constraints. Previously, the fact that a conversion ratio (CR) of 1/4 makes a coded image irritating to human observers for QCIF size was reported for MPEG-4 shape coding. Therefore, careful consideration for small size images such as QCIF should be given to prevent coded images from being unacceptable. To this end, a low bit rate tuned algorithm is proposed in this paper as well. Experimental results are given using an MPEG-4 shape codec.     

Empirical equations on electrical parameters of coupled microstriplines for crosstalk estimation in printed circuit board

Empirical equations for the self and mutual capacitance and inductance (C_s, C_m, L_s, L_m) of coupled microstrip lines in a printed circuit board were derived from the numerical simulation results to reduce the computation time for crosstalk estimation. Comparison of the measured C_s, C_m , L_s and L_m values with the derived empirical equations showed good agreements. Also in the near-end and far-end crosstalks, good agreements were obtained between measurements and the derived empirical equations. Microstrip lines embedded in the homogeneous dielectric material as well as those in the inhomogeneous medium with one side exposed to air were considered in this work. Based on the derived empirical equations, a design guide on the spacing between microstrip lines was established     

Ag Nanowire Reinforced Highly Stretchable Conductive Fibers for Wearable Electronics

Stretchable conductive fibers have received significant attention due to their possibility of being utilized in wearable and foldable electronics. Here, highly stretchable conductive fiber composed of silver nanowires (AgNWs) and silver nanoparticles (AgNPs) embedded in a styrene–butadiene–styrene (SBS) elastomeric matrix is fabricated. An AgNW‐embedded SBS fiber is fabricated by a simple wet spinning method. Then, the AgNPs are formed on both the surface and inner region of the AgNW‐embedded fiber via repeated cycles of silver precursor absorption and reduction processes. The AgNW‐embedded conductive fiber exhibits superior initial electrical conductivity (σ₀ = 2450 S cm^?1) and elongation at break (900% strain) due to the high weight percentage of the conductive fillers and the use of a highly stretchable SBS elastomer matrix. During the stretching, the embedded AgNWs act as conducting bridges between AgNPs, resulting in the preservation of electrical conductivity under high strain (the rate of conductivity degradation, σ/σ₀ = 4.4% at 100% strain). The AgNW‐embedded conductive fibers show the strain‐sensing behavior with a broad range of applied tensile strain. The AgNW reinforced highly stretchable conductive fibers can be embedded into a smart glove for detecting sign language by integrating five composite fibers in the glove, which can successfully perceive human motions.     

Unveiled Ferroelectricity in Well-Known Non-Ferroelectric Materials and Their Semiconductor Applications

Ferroelectric materials are considered ideal for emerging memory devices owing to their characteristic remanent polarization, which can be switched by applying a sufficient electric field. However, even several decades after the initial conceptualization of ferroelectric memory, its applications are limited to a niche market. The slow advancement of ferroelectric memories can be attributed to several extant issues, such as the absence of ferroelectric materials with complementary metal–oxide–semiconductor (CMOS) compatibility and scalability. Since the 2010s, ferroelectric memories have attracted increasing interest because of newly discovered ferroelectricity in well-established CMOS-compatible materials, which are previously known to be non-ferroelectric, such as fluorite-structured (Hf,Zr)O₂ and wurtzite-structured (Al,Sc)N. With advancing material fabrication technologies, for example, accurate chemical doping and atomic-level thickness control, a metastable polar phase, and switchable polarization with a reasonable electric field can be induced in (Hf,Zr)O₂ and (Al,Sc)N. Nonetheless, various issues still exist that urgently require solutions to facilitate the use of the ferroelectric (Hf,Zr)O₂ and (Al,Sc)N in emerging memory devices. Thus, ferroelectric (Hf,Zr)O₂ and (Al,Sc)N are comprehensively reviewed herein, including their fundamental science and practical applications.     

Empirical analysis of strategy selection for the technology leading and technology catch-up in the IT industry

R&D strategies of companies with low and high technological levels are discussed based on the concept of technology convergence and divergence. However, empirically detecting enterprise technology convergence in the distribution of enterprise technology (total productivity increase) over time and identifying key change factors are challenging. This study used a novel statistical indicator that captures the internal technology distribution change with a single number to clearly measure the technology distribution peak as a change in critical bandwidth for enterprise technology convergence and presented it as evidence of each technology convergence or divergence. Furthermore, this study applied the quantitative technology convergence identification method. Technology convergence appeared from the separation of total corporate productivity distribution of 69 IT companies in Korea in 2019–2020 rather than in 2015–2016. Results indicated that when the total technological level was separated from the technology leading and technology catch-up, IT companies were found to be pursuing R&D strategies for technology catch-up.     

Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

Based on the proposed experimental method, the current spreading length of GaN-based light-emitting diodes (LEDs) was measured and analyzed for practical device design. In this study, Thompson's and Guo's models, which are categorized according to vertical series resistance (in particular, p-type contact resistance), were used to extract device parameters. It was shown that the measured current spreading length strongly depends on the injected current density. For LEDs fabricated with low-resistance p-type contacts, this behavior could be explained in terms of the accelerated current crowding with higher current densities occurring as a result of the reduced voltage drop across the junction, which is in good agreement with Thompson's relation. However, for LEDs fabricated with high-resistance p-contacts, unlike Guo's prediction, the measured current spreading length also showed a strong dependence on the injected current density. This was attributed to thermal heating at the p-contact, resulting in the reduction of the voltage drop across the p-contact and so junction voltage, which is also in agreement with Thompson's model. Based on the measured parameters and the design rule, efficient p-type reflectors, namely, hybrid reflectors were designed. Compared with conventional ones, LEDs fabricated with the hybrid reflectors exhibited better output power at a reasonable forward voltage, indicating that the proposed method is effective in understanding the actual current spreading and hence the practical design of high-efficiency LEDs.     

An ultraminiature CMOS pressure sensor for a multiplexedcardiovascular catheter

A multiplexed ultraminiature pressure sensor designed for use in a cardiovascular catheter is described. The sensor operates from only two loads, which are shared by two sensors per catheter. The sensing chip is 350 μm wide by 1.4 mm long by 100 μm thick. CMOS readout circuitry at the sensing site converts applied pressure to a frequency variation in the supply current, which is detected at the end of the catheter by a microprocessor-controlled interface. The nominal pressure sensitivity is 2 kHz/fF about a zero-pressure output frequency of 2.7 MHz. This on-site circuitry contains two reference capacitors which allow external compensation for nonlinearity and temperature sensitivity and has an idle-state power dissipation of less than 50 μW. With the transducer sealed at ambient pressure, the device can resolve pressure variations of about 3 mmHg, while vacuum-sealed devices do considerably better and should permit <2 mmHg resolution in practical systems     

Synchronous current control scheme with reference voltage estimation for voltage-fed PWM inverter

A new current control scheme with the reference voltage estimation for a voltage-fed pulsewidth modulated (PWM) inverter is presented. This scheme is simple and can provide smaller current error than predictive control with the same switching frequency when the load parameters are mismatched.<>     

An equalization technique for orthogonal frequency-divisionmultiplexing systems in time-variant multipath channels

A loss of subchannel orthogonality due to time-variant multipath channels in orthogonal frequency division multiplexing (OFDM) systems leads to interchannel interference (ICI) which increases the error floor in proportion to the Doppler frequency. A simple frequency-domain equalization technique which can compensate for the effect of ICI in a multipath fading channel is proposed. In this technique, the equalization of the received OFDM signal is achieved by using the assumption that the channel impulse response (CIR) varies in a linear fashion during a block period and by compensating for the ICI terms that significantly affect the bit-error rate (BER) performance     

ATM switch with distributed queue windowing scheme

The input queueing switch can be enhanced using a non-first come-first-service (non-FCFS) discipline like window scheme. However, large window sizes are not feasible in centralised contention resolution algorithms due to the increased internal bit rate. Based on the distributed queue concept, a new window scheme for the ATM switch is proposed where the window size can be easily extended. The proposed scheme does not require that the scheduling hardware be speeded up in proportion to the window size, which is essential in the conventional window scheme