Solar UV radiation measurements at potsdam (52°22′N, 13°5′E)

The UV instruments described in part I of this paper have been applied for measurements of solar global UV radiation in three different wavelength regions (310–320 nm, 315–391 nm, and 296–388 nm). UV radiation values obtained since 1985 are analyzed. Different types of regression equations were compared as to how much information on UV radiation is contained in total global radiation measurements (400–2800 nm). Applying those regression equations allows us to estimate UV radiation from measurements of total global radiation, which are readily available.     

Spectrophotometric determination of some antioxidants with potassium permanganate and metol

New spectrophotometric methods for the assay of some antioxidants have been developed using potassium permanganate and metol (p-N-methyl amino phenol). Metol is oxidised at pH 3.0 with potassium permanganate and coupled with antioxidants to give λ_max at 560 nm for propyl gallate and gallic acid and 510nm for butylated hydroxy anisole. The method is simple, sensitive, reproducible and accurate within ±1% and applicable to the assay of antioxidants (gallic acid, propyl gallate and butylated hydroxy anisole) in oils and fats.     

Deconvolution of infrared spectra using various milk proteins as an example

The theory of deconvolution of infra-red spectra is presented and illustrated using milk protein spectra. The advantage of this method is impressively demonstrated and its relevance for dairy farming shown using a simple example, the cooling of milk.     

The heater test at the Grimsel Rock Laboratory: The thermo-mechanical response of the rock mass to a heat flux

The Grimsel Test Site (Felslabor Grimsel — FLG) is situated at a depth of 450 m in the Juchlistock massif of the Bernese Oberland. It is managed by the National Cooperative for the Storage of Radioactive Waste (NAGRA-Switzerland).By means of a heater test, the power output of canisters filled with high-level waste is simulated. This heater test is performed by the German Gesellschaft für Strahlen- und Umweltforschung — GSF. Two electrical heaters, with a heatable length of 6 m, a diameter of 0.3 m and an available power of 4 kW/m, are installed in two vertical boreholes. One of them is located in the granite adjacent to a strongly fractured lamprophyre vein, the other one directly within this disturbed zone. They are operating since August 1986.The thermo-mechanical reaction of the rock mass is registered by a large number of measurement devices which are installed in an array of instrument boreholes around the heaters. They record the deformation and the alteration of rock stresses, the pore water pressure and the water conductivity caused by heating.     

Operation of an experimental facility for fabrication of fuel elements and fuel assemblies of the bor-60 containing vibrocompacted fuel

Translated from Atomnaya Énergiya, Vol. 67, No. 5, pp. 320–323, November, 1989.     

Can heat pipes solve the problems of drift and vibration of cryoholders?

Drift and vibration are the main factors limiting the resolution that can be attained with liquid-nitrogen (LN₂)-cooled cryoholders. Tests with a Gatan holder show that resolution is usually anisotropic. We propose that the metallic heat-conducting element could be replaced by a heat pipe, because such a device can, in principle, minimize drift. The vibration problem could be combatted by using supercooled cryogens.     

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer.