首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   547852篇
  免费   7355篇
  国内免费   1801篇
电工技术   9924篇
综合类   2667篇
化学工业   79275篇
金属工艺   23401篇
机械仪表   20293篇
建筑科学   14771篇
矿业工程   2106篇
能源动力   12798篇
轻工业   47688篇
水利工程   5234篇
石油天然气   3672篇
武器工业   15篇
无线电   69272篇
一般工业技术   106799篇
冶金工业   82493篇
原子能技术   6856篇
自动化技术   69744篇
  2021年   2777篇
  2019年   2519篇
  2018年   23504篇
  2017年   23261篇
  2016年   16546篇
  2015年   4487篇
  2014年   6097篇
  2013年   19690篇
  2012年   15129篇
  2011年   29872篇
  2010年   25071篇
  2009年   23780篇
  2008年   25203篇
  2007年   27998篇
  2006年   13123篇
  2005年   16453篇
  2004年   14183篇
  2003年   13633篇
  2002年   11960篇
  2001年   11325篇
  2000年   10571篇
  1999年   10870篇
  1998年   24099篇
  1997年   17648篇
  1996年   13994篇
  1995年   11029篇
  1994年   9835篇
  1993年   9421篇
  1992年   7168篇
  1991年   6847篇
  1990年   6429篇
  1989年   6137篇
  1988年   5889篇
  1987年   4915篇
  1986年   4861篇
  1985年   6000篇
  1984年   5618篇
  1983年   4855篇
  1982年   4514篇
  1981年   4460篇
  1980年   4218篇
  1979年   4085篇
  1978年   3781篇
  1977年   4550篇
  1976年   6103篇
  1975年   3120篇
  1974年   3013篇
  1973年   2892篇
  1972年   2319篇
  1971年   2004篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.  相似文献   
102.
The bond behavior of prestressing strands is of great importance for the capacity of precast prestressed concrete structures. In the present study, the bond behavior of three-wire strands, and some influencing parameters, were examined by means of steel encased pull-through and push-in tests. The three mechanisms: adhesion, friction and other mechanical actions were found to be present at the strand-concrete interface at different slip values. The results from the experiments showed that the micro roughness of the strand surface strongly affected the initial bond response of the strand, that is the adhesion in the interface. The maximum bond capacity of indented three-wire strands was found to be directly connected to the geometric properties of the strand indents. The influence of the concrete strength on the bond capacity of the strand was hard to interpret. However, the density of the concrete matrix was found to be a better parameter for determine the influence of the concrete rather than the compressive strength.  相似文献   
103.
Note on B-splines, wavelet scaling functions, and Gabor frames   总被引:3,自引:0,他引:3  
Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,.  相似文献   
104.
The In-site of Ba2In2O5 with Brownmillerite structure was partially substituted for Ce4+ ions in order to examine the doping effect on the order-disorder transition. Ba2In2 – x Ce x O5 + x/2 (x = 0.1, 0.2, 0.3, 0.5, 1.0, and 1.5) were prepared by solid state reaction. X-Ray diffraction analyses of these powder samples demonstrated that Ba2In2 – x Ce x O5 + x/2 (x = 0.1 and 0.2) possesses Brownmillerite structure. With increasing content of Ce4+ ion the crystal system of Ba2In2 – x Ce x O5 + x/2 (x = 0.3, 0.5, and 1.0) changed to cubic perovskite structure above the order-disorder transition temperature of Ba2In2O5. Arrhenius plots of the electrical conductivities of Ba2In2 – x Ce x O5 + x/2 (x = 0.2, 0.3, and 1.0) exhibited no discontinuity. These compounds had high transference numbers of oxide ion above 973 k.  相似文献   
105.
We demonstrate that alkali-halide salts, particularly potassium bromide, can reduce the photothermal emission (PTE) from single walled carbon nanotubes (SWNT). PTE is a prominent spectral feature in Raman spectroscopy when a near infrared laser is used to analyze a dark colored sample. We subsequently show that trapping salts inside SWNT and coating SWNT with the salt has a more pronounced impact on not only reducing PTE, but also enhancing the intensity of the Raman spectral features. The effect, which we have called nanotube enhanced Raman spectroscopy (NERS), has differences and similarities to the widely studied surface enhanced Raman spectroscopy (SERS).  相似文献   
106.
Using Java-based tools in multimedia collaborative environments accessed over the Internet can increase an application's client base. Most operating systems support Java, and its "compile once-run everywhere" architecture is easy to maintain and update. The Java-based tools presented here let users share Internet resources, including resources originally designed for single use.  相似文献   
107.
Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt3)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO2/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO2/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO2 substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.  相似文献   
108.
The effect of crystal orientation on the photogeneration of free charge carriers was studied for C60 single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C60 crystal.  相似文献   
109.
We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations.  相似文献   
110.
V. G. Deibuk 《Semiconductors》2003,37(10):1151-1155
The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the ranges of spinodal decomposition and lowers its critical temperature. The introduction of the phenomenological parameter into Matthews-Blakeslee formula makes it possible to reach a satisfactory agreement between theoretically calculated values of critical thickness of epitaxial films and the experimental data.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号