Analysis of external latch-up protection test structure design using numerical simulation

With each new CMOS technology the latch-up sensitivity and effects of prevention strategies change. Products built in these technologies must adhere to stringent guidelines for latch-up ‘Hardness’, and for this reason characterisation of new technologies is needed through the use of test structures. This paper shows a numerical simulation approach which can determine the relative effectiveness of guard-rings in ESD protection device test structures. In this work, time taken to characterise latch-up protection test structures and to chose a protection strategy is greatly reduced by using numerical simulations to design the test structures. The results presented are for variations to the guard-rings for two technologies. Included in these are the typical simulation times and resources required. The technique outlined has the joint advantages of providing accurately representative simulations of the technology and test structure layout in a practical time frame.     

Energy Efficient Hardware Loop Based Optimization for CGRAs

Journal of Signal Processing Systems - Research interest and industry investment in edge computing solutions have increased dramatically in recent years. Consequent quest for balanced performance,...     

Intraphase Microstructure–Understanding the Impact on Organic Solar Cell Performance

A comprehensive study of the effect of intraphase microstructure on organic photovoltaic (OPV) device performance is undertaken. Utilizing a bilayer device architecture, a small molecule donor (TIPS‐DBC) is deposited by both spin‐coating and by thermal evaporation in vacuum. The devices are then completed by thermal evaporation of C₆₀, an exciton blocking layer and the cathode. This bilayer approach enables a direct comparison of device performance for donor layers in which the same material exhibits subtle differences in microstructure. The electrical performance is shown to differ considerably for the two devices. The bulk and interfacial properties of the donor layers are compared by examination with photoelectron spectroscopy in air (PESA), optical absorption spectroscopy, charge extraction of photo‐generated charge carriers by linearly increasing voltage (photo‐CELIV), time‐resolved photoluminescence measurements, X‐ray reflectometry (XR), and analysis of dark current behavior. The observed differences in device performance are shown to be influenced by changes to energy levels and charge transport properties resulting from differences in the microstructure of the donor layers. Importantly, this work demonstrates that in addition to the donor/acceptor microstructure, the intraphase microstructure can influence critical parameters and can therefore have a significant impact on OPV performance.     

Numerical Modeling of Multimaterial Thermoelectric Devices Under Static and Cyclic Thermal Loading

Selection of materials for thermoelectric devices is generally based on a figure of merit that is a function of the Seebeck coefficient, electrical conductivity, and thermal conductivity. While this figure of merit is a useful metric for comparing materials, the relative importance of the constituent properties depends on the particular application and conditions. In addition, multiple materials can be used together to improve the performance or extend the operating range, and determining the performance of such multimaterial combinations requires analysis beyond simply averaging the properties of the constituent materials. In this paper, finite-element numerical simulations under static and cyclic thermal loadings are used to investigate how device performance can be improved by judicious location of the different materials within the device. The results show that the performance of a device with two different materials can be better than that of either of the individual materials. The greatest improvement in performance occurs with cyclic heating, where the overall performance is strongly influenced by the behavior under transient conditions during heating and cooling.     

Carbon hard masks for etching sub-90 nm structures

Carbon hard mask structures have been used to etch a variety of materials typically used in sub 90 nm DRAM manufacture. The results indicate that carbon hard masks can be used very effectively to structure oxide, nitride and metal films giving the CD performance required for the technologies being investigated.     

Examining the effects of caching,compression and popup filtering on internet surfing

Over the years the number of Web users has increased dramatically unfortunately leading to the inherent problem of congestion. This can affect each user's surfing experience. This paper investigates download times associated with a web request, identifies where delays occur, and provides guidelines which can be followed by web developers to enable a faster and more efficient download and service for their users. We conclude that delays in Internet traffic and congestion can often be attributed to poorly developed sites (e.g. excessive image size). Copyright © 2005 John Wiley & Sons, Ltd.     

Monitoring hacker activity with a Honeynet

The Honeynet Project was founded by 30 US based security professionals with the intention of researching the techniques, tools, tactics and motives of hackers and the ‘blackhat’ community in general. A Honeynet Project is an all volunteer, non‐profit organization committed to sharing and learning the motives, tools, and tactics of the hacking community. It is comprised of a number of information security professionals dedicated to honeynet research and information security. This paper outlines the technical configuration of a honeynet, presents some of the key attacks on the honeynet to date and provides recommendations for securing networked systems. Copyright © 2005 John Wiley & Sons, Ltd.     

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器

设计研制了一种新型的低噪声分布式放大器,采用了栅长为1μm的低噪声复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT(CC-HEMT).给出了低噪声分布式放大器的仿真和测试结果.测试结果显示低噪声分布式放大器在2～10GHz频率范围内,输入和输出端口驻波比均小于2.0,相关增益大于7.0dB.带内增益波纹小于1d8.在2～6GHz频率范围内,噪声系数小于5dB;在2～10GHz频率范围内,噪声系数小于6.5dB;测试结果与仿真结果较吻合.     

Computationally efficient methods for blind decision feedback equalization of QAM signals

This paper investigates computationally efficient methods for blind decision feedback equalization (DFE) that reduce the complexity and power requirements of blind equalization algorithms while maintaining their steady-state characteristics for quadrature amplitude modulation (QAM) signals. These include the power-of-two error (POT), selective coefficient update (SCU), and frequency-domain block (FDB) methods. A novel radius-directed stop-and-go (RSG) method is introduced, which selectively adjusts the equalizer tap coefficients based on the equalizer output radius. In addition, a new activation/de-activation method based on the equalizer output radius is utilized to control the feedback equalizer (FBE) of the DFEs. Simulation studies and analysis are provided for empirically derived cable and microwave channels and Ricean fading channels.     

Effect of NiTe Nanoinclusions on Thermoelectric Properties of Bi2Te3

Metal nanoinclusions in bulk thermoelectric matrix create metal?Csemiconductor interfaces, which can result in improvement in the thermoelectric power factor due to low-energy electron filtering and a simultaneous reduction in lattice thermal conductivity due to increased phonon scattering at grain boundaries. The combined effect results in enhancement of the thermoelectric figure of merit. We report the effect of NiTe nanoinclusions in a Bi₂Te₃ matrix. The Bi₂Te₃/NiTe nanocomposite was synthesized by planetary ball milling. Different volume fractions of NiTe nanoinclusions were incorporated into the bulk (Bi₂Te₃) matrix and uniaxially hot pressed at 100?MPa and 500°C. The presence of nanoinclusions was confirmed by x-ray diffraction and transmission electron microscopy. The Seebeck coefficient, electrical conductivity, and thermal diffusivity were measured from room temperature to 150°C. The carrier concentration of the matrix (Bi₂Te₃) and the nanocomposites (NiTe/Bi₂Te₃) at room temperature were deduced from Hall-effect measurements. Addition of NiTe decreased the carrier concentration, and the power factor increased in the 1?vol.% NiTe/Bi₂Te₃ compared with inclusion-free Bi₂Te₃ matrix due to an increase in mobility.