Alfvén-wave flowmeters

Translated from Izmeritel'naya Tekhnika, No. 5, pp. 37–39, May, 1990.     

Digital measuring heads

The range of measuring instruments developed at the N. é. Bauman Moscow State Technical University is considered. All of the measuring heads of these instruments are built according the same fundamental scheme with the use of periodic measures in the form of raster, diffraction grating, and interference structures. These heads may be used in multicoordinate and multiposition instruments for measuring linear and angular quantities, and they are also built into contemporary optical-mechanical devices for their modernization. __________ Translated from Izmeritel’naya Tekhnika, No. 1, pp. 20–23, January, 2007.     

Current approaches to the evaluation of genetically modified food products. Soybean 40-3-2 data

Different methodological approaches were elaborated to evaluate quality and safety of genetically modified food products. The new engineering is proposed to rate medical, biological, genetic and technological advantage of these products. Using the same engineering, a complete analysis of the genetically modified soybean 40-3-2 ("Monsanto Co", USA) has been performed.     

Effect of gadolinium on the properties of Pr–Dy–Fe–Co–B materials

Sintered (Pr_1–x–y Dy _x Gd _y )_13–14(Fe_1–z Co _z )_balB_6–7 materials (x = 0.18–0.58, y = 0.05–0.33, z = 0.2–0.36) have been studied. The magnetic moments of gadolinium ions and those of the sublattice formed by Fe and Co ions are shown to be ordered antiferromagnetically. It is noted that an increase in the content of gadolinium, which substitutes for dysprosium, leads to an increase in residual induction B _r , a decrease in coercive force H _cJ , and an increase in the absolute value of the temperature coefficient of induction. The opposite effect takes place in the case of substitution of gadolinium for praseodymium in materials with a fixed dysprosium content.     

Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon

The study is concerned with the effect of the additional implantation of Si samples with C⁺, O⁺, B⁺, P⁺, and Ge⁺ impurity ions followed by annealing at 800°C on the behavior of the dislocation photoluminescence line D1, induced in the samples by implantation with Si⁺ ions at a stabilized temperature followed by annealing in an oxidizing Cl-containing atmosphere. It is established that the intensity of the D1 line strongly depends on the type of incorporated atoms and the dose of additional implantation. An increase in the D1 line intensity is observed upon implantation with oxygen and boron; at the same time, in other cases, the D1 luminescence line is found to be quenched. The mechanisms of such behavior, specifically, the role of oxygen and its interaction with implanted impurities are discussed.     

Heat exchange of dynamic powder beds with a heat-transfer surface. II. A dust-laden gas flow

Heat exchange of a dust-laden gas flow with the wall of a cylindrical channel in laminar and laminar-to-turbulent transitional regimes of gaseous-phase motion is studied experimentally. Corundum with a particle size of 40 μm was used as the solid phase while air was used as the carrier gas. Experimental values of the heat-transfer coefficient are obtained and approximate dependences for the Nu number are proposed.