Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO/sub 2/+Hf/spl rarr/HfO/sub 2/+Ge and 3GeO/sub 2/+4Al/spl rarr/2Al/sub 2/O/sub 3/+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO/sub 2/, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10/sup 6/ rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices.     

Improved device performance and reliability in high /spl kappa/ HfTaTiO gate dielectric with TaN gate electrode

The device performance and reliability of higher-/spl kappa/ HfTaTiO gate dielectrics have been investigated in this letter. HfTaTiO dielectrics have been reported to have a high-/spl kappa/ value of 56 and acceptable barrier height relative to Si (1.0 eV). Through process optimization, an ultrathin equivalent oxide thickness (EOT) (/spl sim/9 /spl Aring/) has been achieved. HfTaTiO nMOSFET characteristics have been studied as well. The peak mobility of HfTaTiO is 50% higher than that of HfO/sub 2/ and its high field mobility is comparable to that of HfSiON with an intentionally grown SiO/sub 2/ interface, indicative of superior quality of the interface and bulk dielectric. In addition, HfTaTiO dielectric has a reduced stress-induced leakage current (SILC) and improved breakdown voltage compared to HfO/sub 2/ dielectric.     

Pulmonary embolism: prospective comparison of spiral CT with ventilation-perfusion scintigraphy

PURPOSE: To compare prospectively the accuracy of spiral computed tomography (CT) with that of ventilation-perfusion scintigraphy for diagnosing pulmonary embolism. MATERIALS AND METHODS: Within 48 hours of presentation, 142 patients suspected of having pulmonary embolism underwent spiral CT, scintigraphy, and (when indicated) pulmonary angiography. Pulmonary angiography was attempted if interpretations of spiral CT scans and of scintigrams were discordant or indeterminate and intermediate-probability, respectively. RESULTS: In the 139 patients who completed the study, interpretations of spiral CT scans and of scintigrams were concordant in 103 patients (29 with embolism, 74 without). In 20 patients, intermediate-probability scintigrams were interpreted (six with embolism at angiography, 14 without); diagnosis with spiral CT was correct in 16. Interpretations of spiral CT scans and those of scintigrams were discordant in 12 cases; diagnosis with spiral CT was correct in 11 cases and that with scintigraphy was correct in one. Spiral CT and scintigraphic scans of four patients with embolism did not show embolism. Sensitivities, specificities, and kappa values with spiral CT and scintigraphy were 87%, 95%, and 0.85 and 65%, 94%, and 0.61, respectively. CONCLUSION: In cases of pulmonary embolism, sensitivity of spiral CT is greater than that of scintigraphy. Interobserver agreement is better with spiral CT.     

Hierarchical B-picture mode decision in H.264/SVC

To enable robust video transmission over heterogeneous networks, the hierarchical B-picture prediction structure is employed in the state-of-the-art video coding standard H.264/SVC, aiming to produce scalable bitstreams with various frame rates. However, the exhaustive mode decision process with the hierarchical B-picture structure increases the computational complexity of H.264/SVC encoding dramatically. In this paper, a fast mode decision algorithm is proposed to speed up H.264/SVC encoding with the hierarchical B-picture structure, which is achieved by utilizing macroblock (MB) features, correlation of temporal–spatial neighboring MBs, and the discrepant characteristics of hierarchical layers. Extensive experimental results demonstrate that the proposed algorithm is able to reduce the encoding time of H.264/SVC significantly for video sequences with a wide range of resolutions, and meanwhile the video quality and compression ratio are well preserved.     

A Micromachined Reconfigurable Metamaterial via Reconfiguration of Asymmetric Split‐Ring Resonators

A micromachined reconfigurable metamaterial is presented, whose unit cell consists of a pair of asymmetric split‐ring resonators (ASRRs); one is fixed to the substrate while the other is patterned on a movable frame. The reconfigurable metamaterial and the supporting structures (e.g., microactuators, anchors, supporting frames, etc.) are fabricated on a silicon‐on‐insulator wafer using deep reactive‐ion etching (DRIE). By adjusting the distance between the two ASRRs, the strength of dipole–dipole coupling can be tuned continuously using the micromachined actuators and this enables tailoring of the electromagnetic response. The reconfiguration of unit cells endows the micromachined reconfigurable metamaterials with unique merits such as electromagnetic response under normal incidence and wide tuning of resonant frequency (measured as 31% and 22% for transverse electric polarization and transverse magnetic polarization, respectively). The reconfiguration could also allow switching between the polarization‐dependent and polarization‐independent states. With these features, the micromachined reconfigurable metamaterials may find potential applications in transformation optics devices, sensors, intelligent detectors, tunable frequency‐selective surfaces, and spectral filters.     

Drugs of abuse testing in a psychiatric outpatient service

Drug testing of patients in a psychiatric outpatient service is an effective way to identify patients who relapse into renewed use of drugs of abuse and in monitoring the effectiveness of ongoing medical and psychological therapy. Most of this testing involves the analysis of urine specimens with immunoassays. Hair testing affords an alternative specimen matrix that is easy to obtain and not readily adulterated and offers the advantage of a wider surveillance window. Hair analysis is technically demanding, and the possibility of false-positives caused by environmental contamination renders it a controversial alternative. Sweat and saliva are potentially useful testing matrices, but their usefulness in clinical practice must await validation by additional clinical and laboratory experience. The correct interpretation of drug test results is predicated on knowing the performance characteristics of the analytical method, route of administration, and pharmacokinetics of the drug. All questionable positive results need confirmation testing to verify true positivity.     

A novel MONOS-type nonvolatile memory using high-/spl kappa/ dielectrics for improved data retention and programming speed

This paper presents a novel metal-oxide-nitride-oxide-silicon (MONOS)-type nonvolatile memory structure using hafnium oxide (HfO/sub 2/) as tunneling and blocking layer and tantalum pentoxide (Ta/sub 2/O/sub 5/) as the charge trapping layer. The superiorities of such devices to traditional SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ stack devices in obtaining a better tradeoff between faster programming and better retention are illustrated based on a band engineering analysis. The experimental results demonstrate that the fabricated devices can be programmed as fast as 1 /spl mu/s and erased from 10 ns at an 8-V gate bias. The retention decay rate of this device is improved by a factor more than three as compared to the conventional MONOS/SONOS type devices. Excellent endurance and read disturb performance are also demonstrated.     

High-density MIM capacitors (/spl sim/85 nF/cm/sup 2/) on organic substrates

For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density /spl sim/85 nF/cm/sup 2/ was achieved on FR-4 substrate with PECVD silicon nitride as the dielectric layer. Excellent voltage coefficient (/spl sim/2.2 ppm/V/sup 2/) and temperature coefficient (/spl sim/38 ppm//spl deg/C) were obtained for capacitors on FR-4. Dielectric leakage and breakdown characteristics have been assessed, and the results demonstrated acceptable performance. Thus, this technology provides a new method to embed/integrate high-density capacitors on organic substrates for the system-in-package applications.