Effect of preparation method on the dispersion and activity of V2O5–Al2O3 catalysts

Al2O3-supported 12 wt% V2O5 catalysts were prepared by physically grinding both the oxides (solid–solid wetting) and by wet impregnation techniques. The physical mixtures (PM) were treated under two different conditions – calcination in the presence of dry oxygen and wet oxygen. The catalysts were characterized by x-ray diffraction, scanning electron microscopy, electron spin resonance and oxygen and carbon dioxide chemisorptions. Vanadia dispersion of the physical mixture calcined in the presence of wet oxygen was found to be very similar to that of the V2O5/Al2O3 catalyst prepared by the standard impregnation method. Methanol partial oxidation activities of these catalysts were also comparable. This revised version was published online in November 2006 with corrections to the Cover Date.     

布里奇曼法生长碲镉汞晶体的缺陷及其展望

简单介绍了布里奇曼法生长碲镉汞晶体的主要缺陷以及缺陷的控制原理，回顾了国内进行磅镉汞晶体生长的布里奇曼法及加速坩埚旋转技术的布里奇曼法（ＡＣＲＴ－Ｂ）研究的情况，并提出了进一步研究的问题。     

Efficient performance analysis of asynchronous cellular CDMA overRayleigh-fading channels

The bit error rate (BER) analysis of a direct-sequence code-division multiple-access (DS-CDMA) cellular system over a Rayleigh-fading channel often results in complicated expressions even though the Gaussian approximation is applied. A combined probability density function (pdf) approach for the forward link and a mean-method technique for the reverse link are proposed to significantly reduce the computational complexity. The simplified BER expressions are derived and yield accurate results     

某微型起爆器引起的一起误爆事故分析

该文分析某微型起爆器引起的一起误爆事故，指出该起爆器设计上的缺陷及其对作业安全的威胁，提出防患建议。     

布里奇曼法生长碲镉汞晶体的固液界面形态研究

文中综述了布里奇曼法及加速坩埚旋转技术的布里奇曼法生工碲镉汞晶体过程中固液界面形态的研究结果，简单讨论了固液界面形态对组分分布的影响，并将两种技术所得的组分分布结果进行了比较，在分析影响固液界面形态因素的基础上，认为加速坩埚旋转技术是目前改善固液界面形态的有效方法。     

Buffering packetised data: an examination of the crossover effect

Buffer analysis has traditionally relied heavily on the use of traffic models with short range (exponentially decaying) autocorrelation, e.g. Poisson and Markov modulated Poisson processes. Recent literature has suggested the presence of traffic with slowly (hyperbolically) decaying autocorrelation functions; these sources collectively and individually seem to be exhibiting the phenomenon of long range dependence (LRD). Furthermore, it has been claimed that this sort of traffic may exhibit behaviour, when buffered, that is advantageous in that a smaller buffer may be required than would be the case with non-LRD traffic. This phenomenon has been named the crossover effect, and the authors quantify its relevance to ATM networking, using simulation studies of a homogenous mix of chaotic sources. These show that there is a crossover effect, but the key finding is that this effect is much nearer to a buffer length of zero than was predicted by previous theoretical studies, actually occurring at a value so low that it has no practical significance     

On Deciding Readiness and Failure Equivalences for Processes

In this paper, we study the complexity of deciding readiness and failure equivalences for finite state processes and recursively defined processes specified by normed context-free grammars (CFGs) in Greibach normal form (GNF). The results are as follows: (1) Readiness and failure equivalences for processes specified by normed GNF CFGs are both undecidable. For this class of processes, the regularity problem with respect to failure or readiness equivalence is also undecidable. Moreover, all these undecidability results hold even for locally unary processes. In the unary case, these problems become decidable. In fact, they are Π^p₂-complete, We also show that with respect to bisimulation equivalence, the regularity for processes specified by normed GNF CFGs is NL-complete. (2) Readiness and failure equivalences for finite state processes are PSPACE-complete. This holds even for locally unary finite state processes. These two equivalences are co-NP-complete for unary finite state processes. Further, for acyclic finite state processes, readiness and failure equivalences are co-NP-complete and they are NL-complete in the unary case. (3) For finite tree processes, we show that finite trace, readiness, and failure equivalences are all L-complete. Further, the results remain true for the unary case. Our results provide a complete characterization of the computational complexity of deciding readiness and failure equivalences for several important classes of processes.     

Modeling of current-voltage characteristics for strained andlattice matched HEMT's on InP substrate using a variational chargecontrol model

A model for the calculation of the current-voltage characteristics of strained In_0.52Al_0.48As/In_xGa_1-xAs on InP substrate High Electron Mobility Transistors (HEMT's), based on a variational charge control model, is presented. A polynomial fit of the two-dimensional electron gas (2DEG) density is used for the calculation of the current-voltage characteristics. The effect of strain is introduced into the 2DEG density versus gate voltage relation. Very good agreement between the calculated and measured I-V characteristics was obtained. In addition, our results show that, for an indium mole fraction of the In_xGa_1-xAs channel in the range 0.53-0.60, increasing the indium mole fraction lowers the threshold voltage and hence increases the drain current at the same gate bias