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41.
求解二维结构-声耦合问题的一种直接方法   总被引:1,自引:1,他引:0  
向宇  黄玉盈  马小强 《振动与冲击》2003,22(4):40-44,31
本文基于传递矩阵法(TMM)和虚拟边界元法(VBEM),提出了一种求解在谐激励作用下二维结构-声耦合问题的直接法。文中对任意形状的二维弹性环建立了一阶非齐次运动微分方程组,便于用齐次扩容精细积分法求解,对于含有任意形状孔穴的无穷域流体介质的Helmholtz外问题,采用复数形式的Burton-Miller型组合层势法建立了虚拟边界元方程,保证了声压在全波数域内存在唯一解。根据叠加原理并结合最小二乘法,提出了一种耦合方程的直接解法,由于该方法不存在迭代过程,因而具有较高的计算精度和效率。文中给出了二个典型弹性环在集中谐激励力作用下声辐射算例,计算结果表明本文方法较通常采用的混合FE/BE法更为有效。  相似文献   
42.
This study examined reciprocal relationships between collective efficacy and team performance over a season of competition in women's intercollegiate ice hockey within weekends where the opponent was constant for 2 games. Collective efficacy beliefs within 12 teams were assessed prior to both games for at least 7 weekends. Team performance indexes produced an overall measure of performance for each game. The average influence of Saturday collective efficacy on Saturday performance was moderate and positive after controlling for Friday performance. The average influence of Friday performance on Saturday collective efficacy was small and positive after removing the influence of Friday collective efficacy from Friday performance. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
43.
The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.  相似文献   
44.
Si3N4 ceramic was jointed to itself using a filler alloy of Cu76.5Pd8.5Ti15, and the mechanical properties of the jointwere measured and analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15, the SisN4/SisN4 joints were obtained bybrazing at 1373~1473 K f  相似文献   
45.
The magneto-optical Kerr effect for red (628 nm) and green (532 nm) light is used to study magnetization processes in 2D magnonic crystals obtained by etching pits with the diameter D ≈ 32 μm to a depth of t ≤ 2 μm in a 16.1-μm-thick film of yttrium iron garnet (YIG). Hysteresis loops obtained in the case of the inplane crystal magnetization at 628 nm are characterized by lower saturation fields H s and higher remanent magnetizations than those obtained at 532 nm, a result that is attributed to different absorption coefficients of the YIG film at these wavelengths. This difference between the magnetization curves reflects the fact that the magnonic-crystal surface probed with the green light makes a greater contribution to the magneto-optical Kerr effect. Therefore, the green light is more sensitive to the demagnetizing fields, which govern magnetization processes in the magnonic crystals.  相似文献   
46.
This article, the first of three articles on the synthesis of rice processing plants, focuses on the development of simplified mathematical models necessary for use in optimizing rice processing plants. The second concentrates on the optimal synthesis of a rice plant and the third on the sensitivity of the optimization to uncertainty in model parameters. Existing models for rice processing unit operations are not suitable for flowsheet optimization and new models need to be developed to overcome numerical difficulties that occur in optimization applications, specifically in mixed integer nonlinear programming (MINLP) applications. Simplified models of the drying, cooling, and tempering units are developed. In addition head rice yield models, used as a quality indicator, energy consumption, and economic models were also developed. Naturally, the new models exhibit some mismatch with respect to the existing models from which they were developed. However, a sensitivity analysis, presented in Part III, has shown that the optimal flowsheet structure was not sensitive to a lack of fit between the simplified and complex models. The simplified models were found adequate to be appropriate for use at the synthesis stage.  相似文献   
47.
The electrical properties and microstructure of (Ba,Y)TiO3 PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content.  相似文献   
48.
The microstructure evolution in nonstoichiometric titanium carbide is studied during high-temperature deformation at high strain rates and low strains (shock compression) and at slow strain rates and high strains (superplastic regime). The results demonstrate that high-temperature deformation in a broad range of strain rates offers a means of controlling the microstructure of titanium carbide. By varying deformation conditions, one can obtain materials differing in microstructure and chemical composition, in particular, with equilibrium and nonequilibrium microstructures. Accordingly, the physicochemical properties of such materials also differ.  相似文献   
49.
This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).  相似文献   
50.
Whispering-gallery-like modes in square resonators   总被引:1,自引:0,他引:1  
The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.  相似文献   
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