Wide tunable double ring resonator coupled lasers

A double ring resonator coupled laser (DR-RCL) is proposed and analyzed in this letter. Benefiting from the uniform peak transmission, narrow bandwidth and other superior characteristics of traveling wave supported high-Q resonators, DR-RCLs offers many promising advantages over the conventional tunable lasers, including ultra wide wavelength tuning range, high side mode suppression ratio, uniform threshold and efficiency, narrow linewidth, low frequency chirp, and simple fabrication. A DR-RCL with a moderate optical loss ~10 dB/cm in the ring resonators can achieve a wavelength tuning enhancement of ~50. With such a large tuning leverage, DR-RCLs could utilize the electrooptic effects to achieve ultrafast tuning speed with a wide tuning range covering the material gain bandwidth     

Novel Optical Phase Demodulator Based on a Sampling Phase-Locked Loop

A novel phase-locked coherent demodulator, based on a sampling phase-locked loop, is presented and investigated theoretically. The demodulator is capable of operating at high frequencies, by using optical sampling to downconvert the high-frequency input radio-frequency signal to the frequency range of the baseband loop. We develop a detailed theoretical model of the (sampling) phase-locked coherent demodulator and perform detailed numerical simulations. The simulation results show that the operation of the sampling demodulator resembles the operation of the baseband demodulator for very short optical pulses (<2 ps). Furthermore, we investigate how the signal-to-noise ratio of the demodulator is affected by timing and amplitude jitter of the pulsed optical source     

High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.     

Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers

The temperature dependence of the differential gain in AlInGaAs 1310-nm vertical-cavity lasers is investigated. The variations in differential gain and in relaxation resonance frequency are shown to depend on the room-temperature offset between the gain peak wavelength and the wavelength of the lasing mode. The tradeoff between high modulation bandwidth and good high-temperature performance for vertical-cavity lasers is analyzed. A cavity mode that is red-shifted about 25 nm from the gain peak is shown to minimize the variation in modulation bandwidth with temperature, and simultaneously allow for satisfactory high-temperature operation. Experimental results are presented and compared to calculated results with excellent agreement. Because of the change in gain-mode offset with internal temperature, the measured modulation current efficiency changed from about 2 to 4.8 GHz/mA/sup 1/2/ for an increase in drive current from 2 to 10 mA.     

A Hybrid AlGaInAs–Silicon Evanescent Amplifier

We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degC. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification     

Widely tunable bottom-emitting vertical-cavity SOAs

We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.     

Characterisation of frequency response of 1.5 ?m InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique

The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1.5 ?m InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3.3 above 2 GHz.     

High Salinity Relaying to Reduce Vibrio parahaemolyticus and Vibrio vulnificus in Chesapeake Bay Oysters (Crassostrea virginica)

Cases of Vibrio infections in the United States have tripled from 1996 to 2009 and these infections are most often associated with the consumption of seafood, particularly oysters (Crassostrea virginica). Information is needed on how to reduce numbers of Vibrio parahaemolyticus and Vibrio vulnificus in bi‐valve molluscan shellfish (for example, oysters). The purpose of this study was to evaluate the effectiveness of high salinity relaying or treatment in recirculating aquaculture systems (RASs) as methods to reduce the abundance of V. parahaemolyticus and V. vulnificus in oysters. For relaying field trials, oysters were collected from approved harvest waters, temperature abused outside under a tarp for 4 h, and then transferred to high (29 to 33 ppt.) and moderate (12 to 19 ppt.) salinities. For RAS treatment trial, oysters were transferred to 32 to 34 ppt. salinity at 15 °C. After 7, 14, 21, and in some instances 28 d, oysters were collected and analyzed for V. parahaemolyticus and V. vulnificus levels using multiplex real‐time PCR. Initial levels of V. parahaemolyticus and V. vulnificus ranged from 3.70 to 5.64 log₁₀ MPN/g, and were reduced by 2 to 5 logs after 21 to 28 d in high salinity water (29 to 34 ppt.). Oyster mortalities averaged 4% or less, and did not exceed 7%. Relaying of oysters to high salinity field sites or transfer to high salinity RAS tanks was more effective in reducing V. vulnificus compared with V. parahaemolyticus. These results suggest that high salinity relaying of oysters is more effective in reducing V. vulnificus than V. parahaemolyticus in the oyster species used in this study.     

Effect of operant conditioning of heart rate on plasma renin activity

Cardioacceleration produced by operant conditioning was associated with elevation of plasma renin activity. This study suggests that emotional stimuli, which produce cardioacceleration, may also cause increased renin secretion, thus providing a mechanism by which factors operating through the mind and sodium intake could summate in the production of hypertension.     

Effect of dietary selenium on tumor induction by an oncogenic virus

Streptokinase-streptodornase (SK-SD) induced immediate and delayed skin test reactions in a high proportion of patients with disorders in which beta-streptococcal infection may be involved. The P-K test and absorption experiments with antigen or anti-IgE suggested that the immediate reaction was mediated by specific IgE antibody against SK-SD. Furthermore, the ratio of specific IgE antibody against SK-SD to total IgE was roughly calculated to be 20 percent. Finally, the RAST technique was applied to detect specific IgE antibody against SK-SD which showed high radiocounts bound to SK-SD-coupled particles in the sera of nephrotic patients who had a strong immediate reaction against SK-SD and a severe disease state.