求非线性方程近似解的逐次迭代法

本文提出了求解非线性问题的一种新方法——逐次迭代法，本方法先是给出一个初始近似解，然后将这个近似解进行校正迭代，使之接近于真实解，把一个非线性问题转化为一个线性问题来解决。     

机械合金化过程中Fe70B30粉末晶粒尺寸和微观应变的研究

用Ｘ射线和电镜研究了Ｆｅ＿（７０）Ｂ＿（３０）粉末经不同时间高能球磨后晶粒尺寸和微观应力的变化。在机械合金化过程中，粉末的Ｘ射线衍射谱的宽度随球磨时间的增加逐渐加宽，这是晶粒细化和内部微观应力共同作用的结果。Ｘ射线衍射结果表明：随着机械合金化的进行，粉末的晶粒尺寸逐渐减小，球磨初期晶粒尺寸下降较快，经１５ｈ球磨，晶粒尺寸为２５ｎｍ，机械合金化进行到一定时间后晶粒尺寸下降缓慢，８０ｈ球磨后晶粒尺寸可达５ｎｍ。在机械合金化过程中球磨所造成的微观应变不大，球磨初期粉末的内应力随球磨时间增加而增加，当粉末粒子尺寸很小时，随球磨的进行粉末中的微观应变显著下降。     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications     

聚合物复合材料填充剂的改性

在前人研究的基础之上，归纳总结了聚合物复合材料填充剂的种类，综述了对其进行表面改性的目的、条件、方法、工艺以及对改性结果的表征等。文章还分析了影响填充聚合物复合材料性能的因素，指出了今后发展的方向。     

无机膜的应用与展望

本文综述了无机膜的发展、制备方法和应用。     

在柔性变焦系统中的压力变焦镜

从理论上和实验上对水冷镜的镜面曲率半径随压力变化的规律作了研究。对压力变形后镜面相对于球面作了波像差分析，分析表明压力变焦镜用于中红外激光系统是合适的     

高可靠镀Ni／Au工艺及其在微波PTFE电路上的应用

介绍了高可靠电镀Ｎｉ／Ａｕ工艺在ＰＴＦＥ微波印制电路上的应用，并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ｎｉ／Ａｕ镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比，在软基材ＰＴＦＥ敷铜箔板上镀Ｎｉ／Ａｕ工艺能大大提高微波电路的可焊性，高温稳定性和长期可靠性，并且用其所制作的微波器件的高频性能也优于直接镀金工业。     

测井数据实时采集与接口设计

介绍了一种采用改进型的ＣＬＳ３７００数控测井系统对微电阻率扫描仪数据采集与控制接口的设计及实现方法。基于ＣＬＳ３７００数控测井仪和ＦＭＳ仪采用８９Ｃ５１单片机设计出通信接口，解决了微电阻率方法。基于ＣＬＳ３７００数控测井仪和ＦＭＳ仪采用８９Ｃ５１单片机设备出通信接口电路，解决了微电阻主扫描仪现现场实时处理中的瓶颈问题。