A Content Analysis of Print News Coverage of Media Violence and Aggression Research

We conducted a content analysis of news articles (N = 540) to examine whether news coverage of media violence accurately reflects scientific knowledge about exposure to media violence and its effects on viewer aggression. The analysis revealed that over the past 30 years, news articles generally suggested that a link between media violence and aggression exists. However, the tone shifted sharply back toward a neutral conclusion since 2000. This shift may be attributable to the type of medium discussed (e.g., television vs. video games), the number of unaffiliated sources that are cited in the news article, and the sex of the journalist. Implications for how this news coverage may influence news readers are discussed.     

Improved Thermoelectric Performance of Eco‐Friendly β‐FeSi2–SiGe Nanocomposite via Synergistic Hierarchical Structuring,Phase Percolation,and Selective Doping

A β‐FeSi₂–SiGe nanocomposite is synthesized via a react/transform spark plasma sintering technique, in which eutectoid phase transformation, Ge alloying, selective doping, and sintering are completed in a single process, resulting in a greatly reduced process time and thermal budget. Hierarchical structuring of the SiGe secondary phase to achieve coexistence of a percolated network with isolated nanoscale inclusions effectively decouples the thermal and electrical transport. Combined with selective doping that reduces conduction band offsets, the percolation strategy produces overall electron mobilities 30 times higher than those of similar materials produced using typical powder‐processing routes. As a result, a maximum thermoelectric figure of merit ZT of ≈0.7 at 700 °C is achieved in the β‐FeSi₂–SiGe nanocomposite.     

1.3 V supply voltage 38 GHz static frequency divider

An ultra-low supply voltage and low power dissipation fully static frequency InP SHBT divider operating at up to 38 GHz is reported. The fully differential parallel current switched configuration of D-latch maintains the speed advantages of CML circuits while allowing full functionality at a very low supply voltage. The frequency divider operates at up to 38 GHz at a single-ended input power of 0 dBm. The power dissipation of the toggled D-flip-flop is 8 mW at a power supply voltage of 1.3 V. The authors believe this is the lowest supply voltage for static frequency dividers around this frequency in any technology. This low power configuration is suitable for any digital integrated circuit.     

A review of antennas and propagation for MIMO wireless communications

Multiple-input-multiple-output (MIMO) wireless systems use multiple antenna elements at transmit and receive to offer improved capacity over single antenna topologies in multipath channels. In such systems, the antenna properties as well as the multipath channel characteristics play a key role in determining communication performance. This paper reviews recent research findings concerning antennas and propagation in MIMO systems. Issues considered include channel capacity computation, channel measurement and modeling approaches, and the impact of antenna element properties and array configuration on system performance. Throughout the discussion, outstanding research questions in these areas are highlighted.     

Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si via CdTe(112)B buffer layers, whose structural properties include x-ray rocking curve full width at half maximum of 63 arc-sec and near-surface etch pit density of 3–5 × 10⁵ cm⁻² for 9 μm thick CdTe films. HgCdTe p⁺-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths ranging from 3.5 to 5 μm. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors on CdZnTe and Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited current model for temperatures down to 110K. The performance of MBE-grown diodes on Si is also equivalent to that of typical liquid phase epitaxy-grown devices on CdZnTe with R₀A products in the 10⁶–10⁷ Θ-cm² range for 3.6 μm cutoff at 125K and R₀A products in the 10⁴–10⁵ Θ-cm² range for 4.7 μm cutoff at 125K.     

Optimization and characterization of amorphous/crystalline silicon heterojunction solar cells

Amorphous hydrogenated silicon/crystalline silicon (a‐Si:H/c‐Si) heterojunction solar cells are investigated and optimized with regard to efficiency and simplicity of processing. Starting with a survey of a‐Si:H/c‐Si heterojunction solar cell results from the literature, we describe the fabrication steps of our a‐Si:H/c‐Si technology and analyze the electronic device properties by quantum efficiency, current–voltage, admittance, and capacitance–voltage measurements. The open‐circuit voltage and the fill factor of the a‐Si:H/c‐Si heterojunction solar cells under investigation are limited by recombination in the neutral zone of the crystalline Si absorber. Recombination at the a‐Si:H/c‐Si‐interface is subsidiary in respect of the limitation of the open‐circuit voltage. Our best n‐type a‐Si:H/p‐type c‐Si solar cell prepared without high‐efficiency features such as back‐surface field or surface texturing has an independently confirmed efficiency of 14.1% and an open‐circuit voltage of 655 mV. Copyright © 2001 John Wiley & Sons, Ltd.     

Nitrate leaching from loamy soils as affected by crop rotation and nitrogen fertilizer application

Nitrate leaching as affected by cropping system/crop rotation, history of farmyard manure application or fertilizer nitrogen application (0 N, 0.5 N and 1 N) was studied at nine sites on loamy soils during 1986/87, 1987/88 and 1988/89. Soil solution from 80 to 90 cm soil depth was sampled every second week in the period November to May by the use of porous ceramic cups and analysed for NO₃-N and Cl. Climatical conditions were obtained from standard meteorological observations in the region. Drainage from soil profiles was calculated from measured and simulated values of precipitation and actual evapotranspiration, respectively.The results show that type of crop is of the utmost importance for the leaching magnitude of nitrate as 40% of the total variance in nitrate concentrations in the soil solution could be explained by the type of crop.The second factor of importance was the history of farmyard manure (FYM) application, which was able to explain 28% of the total variation in nitrate concentration in the soil solution. Nitrate concentration/leaching from arable land without FYM ever being applied was considerably lower than from arable land which received periodical FYM applications until the early 70's or from arable land which besides periodical FYM applications in the past presently still receives regular applications of FYM. Only about 1% of the total variation in nitrate concentration in the soil solution was explainable by the level of fertilizer nitrogen application.Differences between years explained 14% of the total variation in nitrate concentration in the soil solution due to differences between the years in soil temperatures and water run-off. The run-off during the autumn and winter of 1986/87, 1987/88 and 1988/89 was 95, 275 and 55 mm, respectively. As expected nitrate leaching increased with increasing run off. However, nitrate leaching at the 275 mm run off was considerably lower than expected, which seems explainable by a substantial denitrification. The soil at the sites in question seems thus partly to purify the soil solution for nitrate before it leaves the root zone at the observed high run off conditions.     

Highly birefringent index-guiding photonic crystal fibers

Photonic crystal fibers (PCFs) offer new possibilities of realizing highly birefringent fibers due to a higher intrinsic index contrast compared to conventional fibers. In this letter, we analyze theoretically the levels of birefringence that can be expected using relatively simple PCF designs. While extremely high degrees of birefringence may be obtained for the fibers, we demonstrate that careful design with respect to multimode behavior must be performed. We further discuss the cutoff properties of birefringent PCFs and present experimental results in agreement with theoretical predictions on both single- and multimode behavior and on levels of birefringence     

Fractal modeling techniques for spatial data

The paper presents convolutional linear data models for the processing of one-dimensional (1D) and two-dimensional (2D) spatial data. The models assume that the measured data is the superposition of a stochastic innovation process and a deterministic system function. The innovation process is described by a fractal scaling noise, which has a power spectral density proportional to some power (-β) of the frequency. The system function is assumed to be symmetric and is constructed using autoregressive (AR) filtering procedures. Iterative deconvolution procedures are developed to recover the fractal innovation from the data. For computational convenience, these procedures assume a spectrally white (β=0) innovation, but modify the data prior to inversion by prewhitening the a priori assumed fractal innovation. The filter coefficients recovered by inverting the modified data are then applied to the original data to recover the fractal innovation. The ability of the deconvolution procedures to recover the fractal innovation is demonstrated using 1D and 2D synthetic data sets. As a practical example, the 2D deconvolution technique is applied to an aeromagnetic map from northeastern Ontario, Canada, and is shown to be effective in enhancing magnetic field anomalies     

Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN

In this paper, we describe the change in barrier heights (ϕ_B) and ideality factors (n) of Ni/Au contacts to p-GaN determined from current-voltage measurements as a result of (a) rapid thermal annealing between 400–700°C under flowing nitrogen, and (b) testing at temperatures of 20–300°C. The lowest barrier height and ideality factor values were obtained from samples annealed at 500–600°C. These results provide supporting evidence that thermal processing helps to remove contaminants at the contact-GaN interface, thus decreasing effective barrier height and consequently, contact resistance.