Colossal Barocaloric Effect by Large Latent Heat Produced by First-Order Intersite-Charge-Transfer Transition

Materials which show novel thermal properties can be used to make highly efficient and environmentally friendly energy systems for thermal energy storage and refrigeration through caloric effects. An A-site-ordered quadruple perovskite-structure oxide, NdCu₃Fe₄O₁₂, is found to release significant latent heat, 25.5 kJ kg⁻¹ (157 J cc⁻¹), at the intersite-charge-transfer transition temperature near room temperature. The transition is first-order and accompanied by an unusual magnetic ordering and a large negative-thermal-expansion-like volume change, and thus, it causes a large entropy change (84.2 J K⁻¹ kg⁻¹). The observed entropy change is comparable to the largest changes reported in inorganic solid materials, and more importantly, it is utilized through a colossal barocaloric effect. The adiabatic temperature change by applying 5.1 kbar pressure is estimated to reach 13.7 K, which means efficient refrigeration can be realized through this effect.     

Intermetallic reactions in reflowed and aged Sn-9Zn solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflowing of Sn-9Zn solder ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the surface-finished Au and Ag film dissolved rapidly and reacted with the Sn-9Zn solder to form a γ₃-AuZn₄/γ-Au₇Zn₁₈ intermetallic double layer and ε-AgZn₆ intermetallic scallops, respectively. The growth of γ₃-AuZn₄ is prompted by further aging at 100°C through the reaction of γ-Au₇Zn₁₈ with the Zn atoms dissolved from the Zn-rich precipitates embedded in the β-Sn matrix of Sn-9Zn solder BGA with Au/Ni/Cu pads. No intermetallic compounds can be observed at the solder/pad interface of the Sn-9Zn BGA specimens aged at 100°C. However, after aging at 150°C, a Ni₄Zn₂₁ intermetallic layer is formed at the interface between Sn-9Zn solder and Ni/Cu pads. Aging the immersion Ag packages at 100°C and 150°C caused a γ-Cu₅Zn₈ intermetallic layer to appear between ε-AgZn₆ intermetallics and the Cu pad. The scallop-shaped ε-AgZn₆ intermetallics were found to detach from the γ-Cu₅Zn₈ layer and float into the solder ball. Accompanied with the intermetallic reactions during the aging process of reflowed Sn-9Zn solder BGA packages with Au/Ni/Cu and Ag/Cu pads, their ball shear strengths degrade from 8.6 N and 4.8 N to about 7.2 N and 2.9 N, respectively.     

Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, probably due to the reduction of self-compensation by P atoms substitution on N vacancy sites. XPS analysis is further found that the decrease of surface oxides and the shift of the surface Fermi level toward the valence band edge through P atoms introduced. These experimental results indicate that the P implantation is an effective method to improve p-type conductivity of Mg-doped GaN and reducing the surface barrier height, which can lead to a lower metal contact resistivity to p-type GaN.     

基于FPGA的虚拟电源的研究与实现

设计了以FPGA为核心控制芯片的虚拟电源系统。实现了虚拟电源的硬件平台和软件系统,包括控制开关模块、电压采集模块、电压输出模块、电压自调整模块、UART模块、数值转换模块等。系统利用UART与上位机实现通信,通过控制AD5662和TPS5450芯片输出设定电压,并实时地从AD7699芯片处获得实际输出电压值,通过自调整模块使电压稳定在设定值的附近。电压测试范围从2.6V到4.2V,当系统不带负载时,输出电压的纹波小于10mV,当输出电流为1A时,输出电压纹波小于20mV。     

Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology

In this study, nondestructive test is developed to analyze the structure failure of LED package. The relationship between thermal resistance analysis and LED package failure structure is build with T3Ster thermal transient tester and scanning electron microscope (SEM). The failure LED device with defect in the attaching layer and gap between LED chip and copper are designed advisedly. The failure factors of LED package have been measured with thermal resistance analysis and SEM cross-section images. The thermal dissipation performance of LED with defect in the attaching layer is indicated by thermal resistance analysis combined with SEM cross-section images. The blister in attaching layer results in 4.4 K/W additional thermal resistance. The gap between LED chip and copper also makes high additional thermal resistance with 8.6 K/W. Different failures of LED packages are indicated obviously using thermal transfer analysis. The LED package failure structure such as interface defect between solder and cup-shaped copper is able to forecast without destructive measurement.     

被动直升机声信号波达方向估计

在分析直升机声信号和背景噪声特点的基础上,提出了1种适合于被动单直升机 目标声信号波达方向(DOA)估计的方法。首先在1帧时间内利用傅立叶变换估计直升机声信 号基频,然后用查表获得的投影矩阵滤除不需要的频率成分,最后用波束形成估计到达角。方 法运算量适中,精度较高,通过对采录的1架某型号直升机声信号的分析验证了该算法的有效 性。     

Enhanced linear dynamic range of asymmetric Fabry-Pe/spl acute/rot modulator/detector

An InGaAsP multiple-quantum-well asymmetric Fabry-Pe/spl acute/rot modulator/detector has been developed for radio-over-fiber systems. The measured bandwidth is more than 6 GHz and the total insertion loss is 7.1 dB. The property of nonlinearity and spurious-free dynamic range (SFDR) has been studied theoretically. By optimizing the operation optical wavelength and bias voltage based on the numerical simulation, fifth-order nonlinearity dominates the intermodulation distortion and an SFDR of 101 dB/spl middot/Hz/sup 4/5/ has been achieved experimentally.     

Smart Dynamic Resource Allocation Model for Patient-Driven Mobile Medical Information System Using C4.5 Algorithm

A mobile medical information system (MMIS) is an integrated application (app) of traditional hospital information systems (HIS) which comprise a picture archiving and communications system (PACS), laboratory information system (LIS), pharmaceutical management information system (PMIS), radiology information system (RIS), and nursing information system (NIS). A dynamic resource allocation table is critical for optimizing the performance to the mobile system, including the doctors, nurses, or other relevant health workers. We have designed a smart dynamic resource allocation model by using the C4.5 algorithm and cumulative distribution for optimizing the weight of resource allocated for the five major attributes in a cooperation communications system. Weka is used in this study. The class of concept is the performance of the app, optimal or suboptimal. Three generations of optimization of the weight in accordance with the optimizing rate are shown.