Optical micro-structures fabricated on top of optical fibers by means of two-photon photopolymerization

In this work we report, for the first time to our knowledge, the possibility to fabricate various structures, with good optical proprieties, on the top of optical fibers, using the two-photon lithography (TPL) technique. We show the convenience of this approach to quickly create generic 3D shapes using a single set-up by contrast to past shape-dependent methods. A set of different structures are fabricated and characterized to demonstrate the versatility of this approach and their high optical quality.     

A new decoder for the optimum recovery of nonadditive watermarks

Watermark detection, i.e., the detection of an invisible signal hidden within an image for copyright protection or data authentication, has classically been tackled by means of correlation-based techniques. Nevertheless, when watermark embedding does not obey an additive rule, or when the features the watermark is superimposed on do not follow a Gaussian pdf, correlation-based decoding is not the optimum choice. A new decoding algorithm is presented here which is optimum for nonadditive watermarks embedded in the magnitude of a set of full-frame DFT coefficients of the host image. By relying on statistical decision theory, the structure of the optimum is derived according to the Neyman-Pearson criterion, thus permitting to minimize the missed detection probability subject to a given false detection rate. The validity of the optimum decoder has been tested thoroughly to assess the improvement it permits to achieve from a robustness perspective. The results we obtained confirm the superiority of the novel algorithm with respect to classical correlation-based decoding.     

BaTiO_3纤维/PUIPN_s纳米复合体系导电性能研究

用红外光谱跟踪确定了同步互穿聚合物网络的形成工艺 ,并制成其梯次化复合涂层 ,TEM检测表明两相间的相畴尺寸在纳米级范围内 ;在此基础上 ,以钛酸钡超细纤维对此网络体系进行复合 ,确定偶联剂的加入量及复合工艺 ,测量了不同复合量下材料的电阻率 ,并考察了其伏安特性。此工作可为拓展此类材料的应用领域提供有价值的参考数据。     

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a thermal modelling giving the temperature everywhere in the device [J. Park, M.-W Shin, C.-C. Lee, Thermal modeling and measurement of GaN-based HFET devices, IEEE Electron Device Lett. 24(7) (2003) 424-426 [1]; J.-C Jacquet, R. Aubry, H. Gérard, E. Delos, N. Rolland, Y. Cordier, A. Bussutil, M. Rousseau, S.L. Delage, Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 12th GAAS Symposium, Amsterdam, 2004, pp. 235-238 [2].]. The method is applied to HEMTs (high electron mobility transistors) based on GaAs or GaN. It is shown that the hot area depends on the bias conditions and on the transistor gate recess topology.     

LFMTCN: A Green Ultra-Dense Multi-tier Small Cell Network Using Leader–follower Strategy

Wireless Personal Communications - Design of energy and spectrum-efficient multi-tier small cell network is an emerging research area. This paper has addressed the challenges of power optimization...     

Single pole compact narrow band pass filter using periodic ground defects

In this paper a compact narrow band pass filter has been designed. An H-shape section of microstrip is used to get the smaller band width. The parallel lines are connected to the H section. The periodic slots are made on the ground plane of the microstrip. These defects cause the circuit more compact. The filter has been designed for center frequency 4 GHz and fractional band width 3%. The design methodology has been clearly explained. To verify the proposed technique, a filter has been fabricated and tested. Amoderate matching of the results between the measured and simulated results has been observed due to some imperfection in fabrication.     

Synthesis,size-dependent optoelectronic and charge transport properties of thieno(bis)imide end-substituted molecular semiconductors

The synthesis of two new thieno(bis)imide (TBI, N) end functionalized oligothiophene semiconductors is reported. In particular, trimer (NT3N) and pentamer (NT5N) have been synthesized and characterized. Two different synthetic approaches for their preparation were tested and compared namely conventional Stille cross coupling and direct arylation reaction via C–H activation. Theoretical calculations, optical and electrochemical characterization allowed us to assess the role of the π-conjugation extent, i.e., of the oligomer size on the optoelectronic properties of these materials. In both TBI ended compounds, due to the strong localization of the LUMO orbital on the TBI unit, the LUMO energy is almost insensitive to the oligomer size, this being crucial for the fine-tailoring of the energy and the distribution of the frontier orbitals. Surprisingly, despite its short size and contrarily to comparable TBI-free analogues, NT3N shows electron charge transport with mobility up to μ_N = 10⁻⁴ cm² V⁻¹ s⁻¹, while increasing the oligomer size to NT5N promotes ambipolar behavior and electroluminescence properties with mobility up to μ_N = 0.14 cm² V⁻¹ s⁻¹ and to μ_P = 10⁻⁵ cm² V⁻¹ s⁻¹.     

Loss characteristics in coplanar propagation waveguides fabricated on IIa diamond substrates

The properties of coplanar propagation waveguides (CPW) on various diamond substrates are investigated. We demonstrate that on such material, the physico-chemical surface treatments may be fundamental to obtain good microwave properties. CPW were processed on single crystal CVD diamond samples that were grown either as bulk substrate or as a thin epitaxial layer on a type IIa natural diamond substrate. These CPW exhibited losses around 0.15 dB/mm at 10 GHz and 0.25 dB/mm at 40 GHz. Temperature-dependant measurements imply that structural defects may involve parasitic current conduction. The loss angle tangents of both samples have then been extracted from a quasi-TEM numerical modelling, they are about 0.025 for each kind of substrate.     

Electrical contact resistance between stainless steel bipolar plate and carbon felt in PEFC: A comprehensive study

Bipolar plate represents a key component of Proton Exchange Membrane Fuel Cell (PEFC) with several essential functions, among them the electric connection of elementary cells. Usually made of graphite, this component is studied worldwide in order to develop a commercially viable alternative: different ways have been being investigated, and to date, despite corrosion issues, stainless steel (SS) appears as a good candidate material, but its Electrical Contact Resistance (ECR) can reach unacceptable values when exposed to PEFC environment. This paper offers a comprehensive study of the parameters acting on ECR when using uncoated SS in PEFC: roughness, which influences the surface contact area with carbon baking, bulk composition of the alloy, which influences only partly the nature of passive films, and the composition and structure of passive films, strongly modified by surface treatments and ageing conditions.