面向低频振荡分析的直驱风电机组阻尼转矩建模

针对直驱风电机组直流电压环和锁相环失稳问题,基于直驱风电机组电流源型线性化模型,分析了电网强度、直流电容输入功率以及控制参数对直驱风电机组稳定性的影响;建立了适用于直流电压环和锁相环稳定性分析的电流源型阻尼转矩模型,通过阻尼转矩法揭示了直驱风电机组失稳机理;进一步地将阻尼转矩法拓展至多机并联系统。研究结果表明：电网强度的减小、直流电容输入功率的增加、控制参数(直流电压环比例参数、锁相环比例参数)的减小会降低直驱风电机组低频振荡模式(直流电压环模式、锁相环模式)的阻尼系数,当阻尼系数小于0时,该模式下系统失稳,表现为直驱风电机组发生低频振荡。     

Personalized Convolution for Face Recognition

International Journal of Computer Vision - Face recognition has been significantly advanced by deep learning based methods. In all face recognition methods based on convolutional neural network...     

Infrared target tracking based on proximal robust principal component analysis method

Applied Intelligence - Infrared target tracking plays an important role in both civil and military fields. The main challenges in designing a robust and high-precision tracker for infrared...     

世界主要国家工程科技重大计划与前沿问题综述

本文梳理了近年来世界各主要国家工程科技领域的重大战略计划和措施,简要分析了当前工程科技主要领域发展状况、水平,对主要国家工程科技领域计划的目标、路径与内容进行了比较分析,描绘了工程科技计划关系图、聚焦点和前沿问题。     

安时-卡尔曼交叉运行的电池荷电状态估算策略及其微控制器在环验证

为了提高电池管理系统(BMS)的性能,研究了电池荷电状态(SOC)的估算方法,并根据SOC估算算法精度和系统实时性要求,提出了安时(AH)积分算法-卡尔曼(Kalman)算法(AH-Kalman)交叉运行的SOC估算策略。该策略用开路电压(OCV)法确定SOC初值,以实时性较强的AH积分法为主,采用间歇运行的Kalman滤波法修正安时计量法积分误差。建立了系统仿真模型,验证了卡尔曼滤波算法对安时积分法积累误差的修正作用。将控制算法生成C代码下载到目标控制器,搭建微控制器在环测试验证(PILS)平台,进行了与传统卡尔曼滤波算法的复杂度对比分析。结果表明,所提出AHKalman交叉运行的SOC估算策略在保证了SOC估算精度的同时也具有较好的实时性,便于实际应用。     

一种基于领域本体的用户建模方法

针对当前大多数个性化服务系统的不足,以旅游领域为背景,提出了一种新的基于本体的用户模型构建方法,利用领域本体中的概念、实例和属性描述用户兴趣特征,实现了在语义层次上理解用户兴趣。实验表明,该方法能有效提高用户模型的质量。     

Laser‐irradiated zinc oxide thin‐film transistors fabricated by solution processing

Abstract— This study investigates the effects of subjecting zinc oxide (ZnO) thin films to laser irradiation. The optical, structural, and electrical properties of the as‐deposited and laser‐irradiated films at different laser energies were studied. The transmittances without/with laser irradiation showed a net increase from 85 to 92% (@550 nm) for 250‐nm ZnO films, indicating an improvement in sample crystal linity. In addition, laser treatment decreased the ZnO band gap. Composition structure analysis shows that the crystallinity increased when the laser energy increased. Thin‐film transistors (TFTs) with a ZnO active layer were fabricated. The mobility of as‐deposited ZnO TFT devices (0.19 cm²/V‐sec) increased more than 2.5 times for ZnO of unirradiated laser treatment (0.49 cm²/V‐sec).