Cr、Co、Mn磁性对ZnO压敏特性影响的机理研究

研究了不同浓度Cr、Co和Mn的掺杂对ZnO-PbO-B2O3陶瓷压敏特性的影响.实验表明,ZnO平均晶粒尺寸随各元素掺杂量增加而逐渐变大,压敏电压也随之升高,非线性系数随各元素掺杂量增加而先增大后减小,漏电流先减小后增大.分析认为,过渡族金属元素掺杂对ZnO压敏材料电性能的影响不仅与电子的能级有关,与其自旋特性也紧密相连.ZnO中掺杂的Cr、Mn、Co元素随机取代其中的部分Zn原子后,Cr2+、Mn2+、Co2+在ZnO中产生局域磁矩,会对与其取向不同的自旋电子产生强的散射,这样可增大ZnO陶瓷电阻率和提高其非线性特性.     

基于FPGA的数字发射机的设计

软件无线电的基本思想是以一个通用、标准、模块化的硬件平台为依托,通过软件编程来实现无线电台的各种功能,从基于硬件、面向用途的电台设计方法中解放出来.随着软件无线电技术的发展,数字调制发射机具有调制中心频率可调、频移可编程、调制方式可重组、调制码速率高、可以与编码器合并扩展功能强等很多优点,成为今后发射机的发展主流.本文...     

背表面形貌对硅太阳电池效率的影响

Different processes are used on the back surface of silicon wafers to form cells falling into three groups：textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured.All these parameters of the planar back surface cells are the best.The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower.The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells.The cross-section scanning electron microscopy（SEM） pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact.The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram.It is shown in an external quantum efficiency（EQE） diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.     

高分辨率光纤激光传感系统

提出并实现了一种基于光纤光栅(FBG)激光器的高分辨率光纤传感系统。通过在一段高增益有源光纤写入光纤光栅形成光纤激光传感器,待测信号作用在激光器上引起激光频率变化,采用偏振无关的非平衡迈克耳孙光纤干涉仪将激光频率变化转化为干涉仪相位变化。干涉仪输出的信号经过光电转换后,用采集卡转换为数字信号输入计算机,最后利用改进的归一化相位载波(PGC)解调技术,实现信号的高分辨率解调。实验表明该传感系统的动态应变分辨率达到了5.6×10-4nε/Hz,并且解调结果与待测信号具有良好的线性关系。     

基于FPGA的FIR滤波器的误差分析

数字滤波器作为数字信号处理技术的重要组成部分之一,已广泛应用于信号分离、恢复、整形等重要场合。在工程实践中,往往要求对信号处理要有实时性和灵活性,而基于FPGA的FIR滤波器因其严格的线性相位和简单的设计步骤而应用广泛。本文不仅对基于FPGA设计的FIR滤波器进行了简单的误差分析,包括绝对误差与相对误差分析;而且还做出...     

抛光液组成对LiNbO3 CMP去除速率的影响

影响LiNbO3化学机械抛光速率的因素很多,如抛光液组成、抛光垫质量、抛光工艺参数等.主要研究了抛光液对去除速率的影响,采用磨料 碱 活性剂的配方,首先分析了抛光液各成分对去除速率的影响机理,然后结合各因素的部分相关实验,从机械、化学角度分析其性质特点,对LiNbO3晶片的去除速率进行了研究.结果表明,在保证获得较好抛光表面的前提下,采用的磨料质量分数越高越好,但活性剂体积分数不宜过高,溶液pH值采用无机碱进行调节,即可获得较高的去除速率.     

含多个行洪区的淮干中游段洪水模拟Ⅰ:模型建立

淮干中游分布着16个行洪区,堤内有堤。建立具有良好模拟精度和较高计算效率的洪水模拟模型是科学管理淮河流域洪水的难点和关键。基于MIKE11软件,以行洪时间和蓄洪量不变为原则,把行洪区概化为一维河道;提出了在缺少行洪区实测地形资料的情况下,利用行洪区水位-库容关系曲线概化行洪区河道断面的方法;针对行洪区各口门的不同控制方式,采用相应的概化方法并设置合理的控制参数,模拟洪水在主河道与多个行洪区之间的转换过程;采用2007年和2003年实测洪水资料,对模型进行率定和验证,结果表明该模型精度较高,能快速模拟行洪区进退洪过程及其调度规则。模型可服务于淮河中游洪水的科学安排与实时决策,其建模思路对闸坝众多的复杂河道洪水演进模拟具有一定借鉴意义。     

供水管网水力模型的维护

采用供水管网水力模型对管网运行状态进行模拟是全面了解管网运行状态的有效方法.管网模型建立后,经过一段时间使用,模拟精度会出现下降的趋势.为恢复模型模拟精度,适应实际给水管网的发展,需要对模型进行维护和管理,内容包括拓扑结构更新、节点流量更新、水泵特性曲线更新、供水系统现场测试以及模型校验等内容.通过实例说明,经过克服在建模和运行过程出现的问题,可以使模型模拟精度恢复到建模之初,而且由于在运行中积累了相关的信息和数据,能够使管网水力模型对管网现状的适应性上升到一个更高的水平.     

Phase Evolution of Ga2O3 Produced from Morphology‐Controllable α‐GaOOH Nanocrystals

Fine powders of GaOOH nanocrystals are synthesized via a facile hydrolysis process through the solution–solution interface reactions of anhydrous GaCl₃ and distilled water followed by subsequent solvothermal treatment at mild conditions. Well‐faceted α‐GaOOH hexagonal prism‐like nanorods are prepared through solvothermal treatment at 180°C with CTAB as the morphology controlling surfactant. Ga₂O₃ nanocrystals are fabricated via the pyrolysis of α‐GaOOH hexagonal prism‐like nanostructures at temperatures above 410°C. A peculiar back‐transformation from β‐Ga₂O₃ to α‐Ga₂O₃ has been observed to occur between about 557°C and 719°C, which is considered to be responsible for the coexistence of the two phases. The phase transformation mechanisms of Ga₂O₃ at elevated temperatures, as well as the possible transformation route, have been postulated from a thermodynamic point of view.     

Defect passivation on cast-mono crystalline screen-printed cells

Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demonstrates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H^– or H⁰ from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.