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111.
作为长江第一坝的葛洲坝水电站,其水轮机磨蚀情况引起国内同行的关注。根据长江的水沙特点、葛洲坝工程泥沙研究成果、十年来运行观测实践、水轮机运行及磨蚀修复状况,对葛洲坝水轮机磨蚀的现状进行了评论和剖析,提出了今后评价和解决葛洲坝水轮机磨蚀的九点建议及意见。 相似文献
112.
文中介绍了利用硫磺盖帽电探针测定工业炸药爆轰压力的方法,并对煤炭工业常的4类11个品种炸药的爆轰压力进行了实际测量。 相似文献
113.
本文提出了油井稳定生产状态下的脉冲试井数学模型,利用时间和空间叠加原理求得其解析解。并用非线性回归分析方法来进行脉冲试井分析。 相似文献
114.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
115.
The present study was undertaken to evaluate the postoperative relapse from the period of unwiring to 1 year postoperatively and its correlation to the amount of mandibular setback and change in vertical dimension after mandibular bilateral sagittal split osteotomy. Twenty-seven patients were evaluated cephalometrically by the time preoperatively, 6 weeks, 6 months and 1 year postoperatively. It was found that 1) the average amount of mandibular setback at pogonion point, 6 weeks postoperatively, is 7.6mm backward and 1.9mm downward, 2) the average amount of horizontal relapse at pogonion point, 6 months and 1 year postoperatively, are 1.9mm and 2.3mm respectively. 86% of the horizontal relapse, 1 year postoperatively, occurs in the first 6 months after removal of intermaxillary fixation, 3) the average amount of vertical relapse at pogonion point, 6 months and 1 year postoperatively, are 0.9mm and 1.1mm upward. 82% of the vertical relapse, 1 year postoperatively, occurs in the first 6 months after removal of intermaxillary fixation, 4) the amount of 1 year postoperatively horizontal relapse is significantly correlated both with the amount of horizontal mandibular set back and vertical downward change (r = 0.58, 0.67, p < 0.001), whereas the amount of vertical relapse is with the vertical downward change only, but horizontal setback isn't. 相似文献
116.
117.
J. S. Hong L. Gao X. X. Huang B. A. Shaw D. P. Thompson 《Journal of Materials Science》1996,31(4):957-962
Tetragonal zirconia polycrystalline (TZP) ceramics containing SiC reinforcement in the form of fine particles (nano-scale), particles (micro-scale), whiskers and platelets were synthesized by hot-pressing. The effects of morphology and grain size of SiC reinforcement on the strength and fracture toughness at room temperature were investigated. The addition of SiC (in whatever form) caused decreases in strength and toughness at room temperature with the exception of whisker-reinforced materials. Toughness fell off with increasing temperature, but nevertheless retained about one-half of the room-temperature value for that particular SiC reinforcement. However, the whisker- and particle-reinforced materials had higher K
lc values at high temperature than fine particle- or platelet-reinforced materials, with values in excess of 7 MPa m1/2 at 1000 °C. The microstructure was examined for SiC whisker-reinforced/TZP materials by TEM and HREM, to examine the nature of the whisker/zirconia interface. 相似文献
118.
In this article, the development of a circularly polarized microstrip array with 28 dBic of gain at 32 GHz is presented. Two primary objectives of this development are minimizing the microstrip array's insertion loss and maintaining a reasonable frequency bandwidth (3%). The parallel/series feed technique for the array's power distribution circuit and the sequential rotation method for the element arrangement are employed to meet these objectives 相似文献
119.
120.
以行波半导体光放大器速度方程为基础,采用传输矩阵方法,对锥形结构半导体光放大器的增益和饱和特性进行理论研究。讨论了不同锥形长度,不同结构时的增益和饱和特性差异。理论研究表明,锥形结构能改善半导体光放大器的偏振灵敏度。在同一锥度下,长锥形长度能提高饱和增益,降低偏振度。在进行半导体光放大器有源条结构设计时要综合考虑锥度及锥形长度的影响,以实现结构优化 。 相似文献