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51.
It has been reported that high-temperature (~1100°C) N2 O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate  相似文献   
52.
钒冶炼焙烧添加剂选择研究   总被引:1,自引:0,他引:1  
对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨,研究了几种常用添加剂的焙烧条件,分析比较了其性能,提出用NaCl-Na2CO3作焙烧添加剂替代NaCl可大幅度减少大气污染,提高冶钒转化率;且不改变工艺流程,无需设备投资,具有较好的经济效益和环境效益。  相似文献   
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In this paper, the CdxHg1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ(3) was measured by the degenerate four wave mixing (DFWM). The values of χ(3) was in the range of 10-11-10-12 MO esu at wavelength of 1.06 μm.  相似文献   
56.
In this paper, the asymptotic waveform evaluation (AWE) technique is first applied to the conventional eigenmode expansion method for characterizing a power/ground (P/G) plane pair and analyzing the simultaneous switching noise on such plane pairs for printed circuit boards or multichip modules. The application of AWE avoids a large number of iterations in computing the impedance frequency response of a P/G plane pair structure and greatly reduces the computation time. Meanwhile, to obtain an accurate solution in an entire frequency range, we employ the complex frequency hopping technique which can help select multiple expansion points. In addition, the proposed approach can also be used to characterize the P/G plane pair structures with irregular shapes. Three examples demonstrate its high efficiency and good accuracy.  相似文献   
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Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.  相似文献   
59.
This paper presents an exact non‐reflecting boundary condition for dealing with transient scalar wave propagation problems in a two‐dimensional infinite homogeneous layer. In order to model the complicated geometry and material properties in the near field, two vertical artificial boundaries are considered in the infinite layer so as to truncate the infinite domain into a finite domain. This treatment requires the appropriate boundary conditions, which are often referred to as the artificial boundary conditions, to be applied on the truncated boundaries. Since the infinite extension direction is different for these two truncated vertical boundaries, namely one extends toward x →∞ and another extends toward x→‐ ∞, the non‐reflecting boundary condition needs to be derived on these two boundaries. Applying the variable separation method to the wave equation results in a reduction in spatial variables by one. The reduced wave equation, which is a time‐dependent partial differential equation with only one spatial variable, can be further changed into a linear first‐order ordinary differential equation by using both the operator splitting method and the modal radiation function concept simultaneously. As a result, the non‐reflecting artificial boundary condition can be obtained by solving the ordinary differential equation whose stability is ensured. Some numerical examples have demonstrated that the non‐reflecting boundary condition is of high accuracy in dealing with scalar wave propagation problems in infinite and semi‐infinite media. Copyright © 2003 John Wiley & Sons, Ltd.  相似文献   
60.
A powerful concept to cope with resource limitations and information redundancy in wireless sensor networks is the use of collaboration groups to distill information within the network and suppress unnecessary activities. When the phenomena to be monitored have large geographical extents, it is not obvious how to define these collaboration groups. This article presents the application of geometric duality to form such groups for sensor selection and non-local phenomena tracking. Using a dual-space transformation, which maps a non-local phenomenon (e.g., the edge of a half-plane shadow) to a single point in the dual space and maps locations of distributed sensor nodes to a set of lines that partitions the dual space, one can turn off the majority of the sensors to achieve resource preservation without losing detection and tracking accuracy. Since the group so defined may consist of nodes that are far away in physical space, we propose a hierarchical architecture that uses a small number of computationally powerful nodes and a massive number of power constrained motes. By taking advantage of the continuity of physical phenomena and the duality principle, we can greatly reduce the power consumption in non-local phenomena tracking and extend the lifetime of the network.  相似文献   
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