Sensitometric characteristics of an all‐solid‐state photoelectrochromic pixel for an electrochromic light‐addressable display

Abstract— An all solid‐state photoelectrochromic element (PECE) was developed on the basis of electrochromic layers of WO₃ and polyaniline with a layer of polymer electrolyte placed on a base of polyamidosulfoacid, in which a thin‐film CdS_xSe_1?x photoresistor was used as an electronic key. The dependence of the sensitometric characteristics of the PECE on the applied voltage was studied.     

Cover Picture: UV‐Light‐Induced Swelling and Visible‐Light‐Induced Shrinking of a TiO2‐Containing Redox Gel (Adv. Mater. 9/2007)

Polyacrylate gels containing Ag⁺ and TiO₂ nanoparticles are shown to swell under UV light and shrink under visible light in water. In work reported by Tetsu Tatsuma and co‐workers on p. 1249, the TiO₂ absorbs UV light and reduces the Ag⁺, whereas the deposited Ag absorbs visible light and dissolves itself. These redox reactions change the interactions between the polymer chains and eventually the volume of the gel, as shown on the cover.     

Aging response of the young’s modulus and mechanical properties of Ti-29Nb-13Ta-4.6Zr for biomedical applications

Alloys for implant devices require improved strength but a reduced Young’s modulus, in order to become mechanically more compatible with adjacent bone tissues. In this study, a new metastable β-type titanium alloy, Ti-29Nb-13Ta-4.6Zr (wt pct), was subjected to aging treatment to produce different microstructures, and the resulting mechanical properties, including the Young’s modulus, were measured. The Young’s modulus of this alloy is found to be sensitive to microstructures generated by various heat treatments. For microstructures varying from (α + β) to (α + β + ω) and (β + ω), the Young’s modulus increases with an accompanying increase in tensile strength and hardness, but decreases in ductility. The (β + ω) microstructure has a low strength, high modulus, and poor ductility and cannot be used for biomedical applications. For an (α + β) microstructure, the volume fraction of the phases is shown to be the main factor that determines the mechanical properties.     

Specific features of optical orientation and relaxation of electron spins in quantum wells with a large spin splitting

The processes of optical spin orientation and spin relaxation of electrons are treated theoretically for semiconductor quantum wells, in which the spin splitting of the energy spectrum is comparable with the characteristic energy of charge carriers. The density matrix of photoexcited electrons at the instant of optical excitation is obtained in explicit form. A system of kinetic equations describing the behavior of the spin density matrix at an arbitrary relation between the average energy of charge carriers and the spin splitting is derived. It is demonstrated that, upon photoexcitation, a noticeable degree of orientation can be attained only in the pulse mode of operation, when the photoexcitation pulse duration is comparable with the period of spin precession in the field of spin splitting. It is shown that the total spin of the ensemble of electrons exhibits oscillations damping with time; the shape and damping time of the oscillations are sensitive to the parameters of photoexcitation and the spin splitting.     

Vibration analysis of machine tool’s hexapod table

Parallel mechanisms have found new applications in machine tool’s as the end effector carrying the spindle or used as the table of the machine. Investigations on the dynamics and especially the vibration behavior of these mechanisms are in the initial stage. The authors developed a vibration model for the hexapod table of milling machines and machining centers and derived the relevant explicit equations. The eigenvalue problem of the upper platform of hexapod was solved to obtain the natural frequencies of the platform. The results have been verified with FEM simulation. The distinguishing features of the hexapod tables from the view point of dynamic behavior have also been concluded.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

A Tutorial on GrÖbner Bases With Applications in Signals and Systems

This paper is a tutorial on GrÖbner bases and a survey on the applications of GrÖbner bases in the broad field of signals and systems. A reasonably detailed review is given of several fundamental theoretical issues that occur in the use of GrÖbner bases in multidimensional signals and systems applications. These topics include the primeness of multivariate polynomial matrices, multivariate unimodular polynomial matrix completion, and prime factorization of multivariate polynomial matrices. A brief review is also presented on the wide-ranging applications of GrÖbner bases in multidimensional as well as one-dimensional circuits, networks, control, coding, signals, and systems and other related areas like robotics and applied mechanics. The impact and scope of GrÖbner bases in signals and systems are highlighted with respect to what has already been accomplished as a stepping stone to expanding future research.      

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.