Picosecond pulse generation with ultralow jitter in 1.5-μmmulticontact MQW lasers using Q-switching

High-peak-power picosecond pulses with ultralow jitter of 65 fs (50-500 Hz) have been generated by Q-switching multi-quantum-well (MQW) distributed-feedback (DFB) and Fabry-Perot (FP) multicontact lasers. Peak pulse powers of 80 mW have been measured for pulses having durations of 26 ps and repetition rates of 1.25 GHz     

SiO2 gate insulator defects,spatial distributions,densities, types,and sizes

Standard IC processes, as well as those involving the use of ionizing radiation, such as x-ray lithography etc., result in the generation of bulk defects, and interface states in the gate insulator, or underlying substrate, respectively, of insulated gate field effect transistors. Bulk defects are believed to be present as positively and negatively charged electron and hole traps, respectively, as well as neutral hole and “large” and “small” neutral electron traps. This paper provides a perspective of the current state of knowledge about the spatial distributions of large bulk defects, their areal densities, sizes, possible interrelationships among them, and the special cases of defects created by ion implanted silicon and oxygen, where knock-on effects have been simulated. It appears that bulk defects may all have their origin in neutral hole traps, (so-called E′ centers) and that when the insulator thickness is decreased to about 6-7 nm, defects are either no longer present, or, more likely, are incapable of trapping charge at room temperature because trapped carriers can either tunnel to one of the interfaces, or be annihilated by a reverse process. It appears possible also that the precursor of the several types of defects only forms at a “grown” silicon-silicon oxide interface. In theory, this would make it possible to grow defect free insulators by a combination of deposition and oxidation processes.     

Modeling of junction formation and drive-in in ion implanted HgCdTe

N-on-p junction formation and drive-in in ion implanted Hg_0.8Cd_0.2Te photodiodes have been studied. A model of the junction formation and drive-in processes has been developed that accounts for the variations in injected Hg interstitial concentration, background point defect and extrinsic doping levels, sample geometry, and annealing conditions. The limiting mechanisms controlling junction drive-in were investigated using the model. Experimental data showed the junction drive-in rate was proportional to the square root of time, indicating a diffusion limited process. The diffusion limited process is the result of a solubility limit for the Hg interstitial concentration. This limit is approximately the same value as that obtained for Hg interstitials in Hg saturated Hg_0.8Cd_0.2Te in type conversion and self-diffusion experiments (D_IC_I = 1.43 × 10₁₃exp(−.457 eV/ kT)*P_Hg).     

在符合USB 2.0标准的系统中引进物理层

鉴于USB(通用串行总线)ASIC控制器的线宽不断变小,迫使物理层从控制器中分离出来,这使得许多系统设计人员认识到物理层独立的重要性.由于业界所需的分立物理层器件能与在较低VCC下工作的USB控制器接口,系统设计人员必须在符合USB2.0标准的系统中正确地引进物理层.     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Error estimation for numerical differential equations

Given a capable human being and a computer, it is possible to make an approximation to the solution of a nonlinear differential equation. However, under the (usually correct) assumption that the equation is analytically intractable, the result of the computation is not the exact solution; indeed it may be so far from the exact solution as to be completely useless. We are interested in the relationship between the effort expended by the human and the computer, and the duality of the computed approximation to a partial or ordinary differential equation. To be specific, we would like to think in terms of a cost-benefit analysis. The cost of the computation is a combination of the human effort and computer resources used to obtain the approximation. The benefit includes, of course, the computed approximation, but it also includes an estimate of the quality of the approximation, that is, an error estimate. It is our opinion that in computational science, as with the experimental sciences, results should always be presented with some estimate of their accuracy. In addition, however, there is another facet to error estimation: one cannot even attempt a cost-benefit analysis or efficiency comparison of methods without an error estimate to evaluate the results     

Vector-valued time-frequency representations

Cohen's (1989) class of time frequency distributions (TFDs), which includes the spectrogram (SP), Wigner distribution (WD), and reduced interference distributions (RIDs) has become widely known as a useful signal analysis tool. It has been shown that every real-valued TFD can be written as a weighted sum of SPs. The “SP decomposition” has been used to construct fast approximations to desirable TFDs using the SP building block, for which there exist accessible and efficient hardware and software implementations. We introduce a class of linear, vector-valued time-frequency representations (TFRs) that are easily related to associated bilinear TFDs through the SP decomposition. We solve a least-squares signal synthesis problem on modified vector-valued TFRs that are associated with nonnegative TFDs as a weighted sum of least-squares short-time Fourier transform (STFT) signal synthesis schemes. We extend the solution to vector-valued TFRs associated with high-resolution TFDs in order to define a high-resolution alternative to STFT signal synthesis, as demonstrated by desirable properties and examples. The resulting signal synthesis methods can be realized as a weighted sum of STFT synthesis schemes, for which there exist accessible and efficient hardware and software implementations     

New directions in commercial fluorescent lighting

It is shown how compact fluorescent lamps and smaller luminaires using deeper shielding can now meet, better than traditional commercial lighting approaches, the requirements of lighting the newer space configurations and seeing tasks that did not exist a few years ago. Design approaches are shown that will optimize lighting cost and effectiveness in matching the new hardware and the new lighting needs. Luminaire patterns are shown in various room and furniture configurations. Their effectiveness in delivering light into panelled workstations and practical methods of predicting the delivered light are discussed     

Synthesis of Imidazole‐Based AIEgens with Wide Color Tunability and Exploration of their Biological Applications

Research on aggregation‐induced emission (AIE) has become increasingly popular recently and various AIE luminogens (AIEgens) have been developed based on tetraphenylethene, hexaphenylsilole, distyrylanthracene, tetraphenylpyrazine, etc. However, facile tuning of the AIEgen emissions in a wide range remains challenging. Herein, a novel series of AIEgens is reported, based on imidazole‐cored molecular rotors, with facile synthesis and emission colors covering the whole visible spectrum. Moreover, these imidazole derivatives exhibit biological functions unique among the AIEgens, including mitochondria‐specific imaging and antifungal activity. Benefiting from the easy preparation and the tunable emission, the imidazole derivatives are expected to not only diversify the family of AIEgens but also enrich their biological applications.     

Fundamental properties of radiation from a leaky mode excited on a planar transmission line

By using a specific normalization, it is shown that the TM/sub 0/ radiation field from a leaky mode that is excited by a source on any printed-circuit structure can be represented in a unified manner. The general properties of the normalized leaky-mode radiation field are examined in detail for a variety of phase and attenuation constants, as well as distances from the source, and for different types of source excitations. The normalized leaky-mode radiation field is compared to similarly normalized geometrical-optics and far-field radiation expressions to provide further insight into the nature of the radiation fields in the near- and far-field regions. The results provide a general view of leaky-mode radiation properties independent of the type of planar transmission line or background structure.