A new method of treatment for mallet finger. A preliminary report

An infant with a typical Edwards syndrome and a modal chromosome number of 46 is reported. In all cells analyzed one chromosome G was missing and an additional chromosome similar to a pair No. 16 was present. The phenotype of the child indicates that the extra element is a translocation between G and 18 chromosomes as in one case described previously.     

Quantitative cytochemical changes induced by dexamethasone and adrenalectomy in rat liver chromatin

A wild-type strain of Staphylococcus aureus, which inactivates a wide variety of aminoglycosides (except the gentamicin components), has been found to harbor a plasmid (RAp01) that mediates the biosynthesis of a nucleotidyltransferase. This enzyme modifies the 4'-hydroxy function of these antibiotics. The plasmid has been studied, the enzyme responsible for this resistance pattern has been isolated by affinity chromatography, and its kinetics and physicochemistry have been characterized. The target of this enzyme has also been located by demonstrating the structure of one inactivated compound, 4'-(O)-adenylyltobramycin.     

Transformation-induced alterations in adhesion. Binding of pre-formed cell aggregates to cell layers

Male and female college students were shown videotapes of supposed male offenders describing the details of thefts they had committed. Videotaped sequences were varied so that offenders were 9 to 10 years old or of college age. Also, actors varied in their mode of emotional self-presentation. Comparisons of punishments suggested by subjects indicated that joyful actors received the highest level of punishment while distressed offenders received the lowest level of suggested punishment. It was also found that the emotions of children exerted a greater persuasive effect on subjects' ratings than did the emotions of adults although the pattern of results was similar across ages. These results were discussed as demonstrating that the age and emotion of an offender can exert considerable influence on the attribution of blame made by a disciplinarian.     

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with f_T = 305 GHz at V_ds = 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mum thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed energy-efficient logic applications has been achieved.