Quasi-saturation capacitance behavior of a DMOS device

This paper reports a simulation study on the capacitance characteristics of a double-diffused metal-oxide semiconductor (DMOS) device operating in the quasi-saturation region. From the analysis, the capacitance effect of the gate oxide upon the drift region cannot be modeled as an overlap capacitance, because the drain-gate/source-gate capacitances of the DMOS device may exceed the gate-oxide capacitance due to the larger voltage drop over the gate oxide than the change in the imposed gate bias when entering the quasi-saturation region. This effect can be the explanation for the plateau behavior in the gate charge plot during turn-on and turn-off of the DMOS device. Based on the small-signal equivalent capacitance model, the accumulated charge in the drift region below the gate oxide may thoroughly associate with the drain terminal in the prequasi-saturation region and with the source terminal in the quasi-saturation region     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

A 1.5-V full-swing bootstrapped CMOS large capacitive-load drivercircuit suitable for low-voltage CMOS VLSI

This paper reports a 1.5-V full-swing bootstrapped CMOS large capacitive-load driver circuit using two bootstrap capacitors to enhance the switching speed for low-voltage CMOS VLSI. For a supply voltage of 1.5 V, the full-swing bootstrapped CMOS driver circuit shows a 2.2 times improvement in switching speed in driving a capacitive load of 10 pF as compared to the conventional CMOS driver circuit. Even for a supply voltage of 1 V, this full-swing bootstrapped CMOS large capacitive-load driver circuit is still advantageous     

Resource Reuse for D2D Communication in LTE Networks by Efficient Grouping

Wireless Personal Communications - Device to device (D2D) communication is a key technology of 5G mobile communications. It allows devices to communicate by using direct links, rather than...     

极低信噪比下对偶序列跳频信号的随机共振检测方法

针对对偶序列跳频(DSHF)在极低信噪比(SNR)下无法通信的问题,该文充分利用对偶序列跳频信号时、频域物理特征,提出一种随机共振(SR)检测方法,极大扩展该信号的应用场景。首先,通过分析对偶序列跳频的发射、接收信号及超外差解调的中频(IF)信号,构建随机共振系统,采用尺度变换调整中频信号;然后,引入判决时刻,将无定态解的非自治福克普朗克方程(FPE)转化为可解的自治方程,从而推导出含时间参量的概率密度周期定态解;其次,以最大后验概率为准则,得到检测概率、虚警概率和接收机工作特性(ROC)曲线;最后,得出以下结论：(1) 应用匹配随机共振检测对偶序列跳频信号的信噪比最低可达–18 dB;(2)对偶序列跳频与匹配随机共振结合,适用于信噪比在–18～–14 dB的信号检测;(3)应用匹配随机共振检测对偶序列跳频信号在信噪比为–14 dB时,检测性能提升了25.47%。仿真实验验证了理论的正确性。     

A 1-V 10.7-MHz fourth-order bandpass /spl Delta//spl Sigma/ modulators using two switched op amps

A 1-V 10.7-MHz fourth-order bandpass delta-sigma modulator using two switched opamps (SOPs) is presented. The 3/4 sampling frequency and the double-sampling techniques are adapted for this modulator to relax the required clocking rate. The presented modulator can not only reduce the number of SOPs, but also the number of capacitors. It has been implemented in 0.25-/spl mu/m 1P5M CMOS process with MIM capacitors. The modulator can receive 10.7-MHz IF signals by using a clock frequency of 7.13 MHz. A dynamic range of 62 dB within bandwidth of 200 kHz is achieved and the power consumption of 8.45 mW is measured at 1-V supply voltage. The image tone can be suppressed by 44 dB with respect to the carrier. The in-band third-order intermodulation (IM3) distortion is -65 dBc below the desired signal.     

More investigations of leakage and nonleakage conductor-backedcoplanar waveguide

Through rigorous full-wave analysis, the effective dielectric constant, normalized attenuation constant, characteristic impedance, and radiation pattern of two types of conductor-backed coplanar waveguides are obtained. The analytic results show that the leakage effect is not only controlled by the thickness and dielectric constant of the substrate but also by the slot width. The leakage power transforms to a radiation space wave and a surface wave, the transverse electric field diagrams in the substrate and the far-zone radiation pattern verify the leakage phenomenon. The first structure has the maximum radiation intensity in the endfire direction, while the second one which has more leaky waves radiates into the air, is better served as a radiating device. For both structures under the nonleakage condition, the characteristic impedance is sensitive to the change of the strip width but not the slot width. Using these properties, the nonleaky and leaky circuits can exist on the same circuit board by choosing appropriate circuit dimensions     

A graphic approach to performance analysis of multistage linear interference canceller in long-code CDMA systems

The signal-to-interference-plus-noise-ratio performance of the multistage linear parallel and successive interference cancellers (LPIC and LSIC) in a long-code code-division multiple-access system is analyzed using a graphical approach. The decision statistic is modeled as a Gaussian random variable, whose mean and variance can be expressed as functions of moments of R for the LPIC and L for the LSIC, respectively, where R is the correlation matrix of signature sequences and L is the strict lower triangular part of R. Since the complexity of calculating these moments increases rapidly with the growth of the stage index, a graphical representation of moments is developed to facilitate the computation. Propositions are presented to relate the moment calculation problem to several well-known problems in graph theory, i.e., the coloring, the graph decomposition, the biconnected component finding, and the Euler tour problems. It is shown that the derived analytic results match well with simulation results.     

Improved priority access, bandwidth allocation and traffic scheduling for DOCSIS cable networks

The Data Over Cable Service Interface Specifications (DOCSIS) is intended to support IP flows over HFC (hybrid fiber/coax) networks with significantly higher data rates than analog modems and Integrated Service Digital Network (ISDN) links for high quality audio, video and interactive services. To support quality-of-service (QoS) for such applications, it is important for HFC networks to provide effective media access and traffic scheduling mechanisms. In this paper, we first present a multilevel priority collision resolution scheme with adaptive contention window adjustment. The proposed collision resolution scheme separates and resolves collisions for different traffic priority classes (such as delay-sensitive and best effort streams), thus achieving the capability for preemptive priorities. Second, a novel MAC (media access control) scheduling mechanism and a new bandwidth allocation scheme are proposed to support multimedia traffic over DOCSIS-compliant cable networks. It is shown through simulation results that throughput and delay performance have been improved for the transmission of real-time VBR (variable bit rate) traffic as compared to current DOCSIS specifications.     

物理层安全约束下的AF双向中继系统波束赋形和人工干扰联合设计

波束赋形和人工干扰是现有研究中最为常见的两种物理层安全增强技术,本文针对AF （放大转发）双向中继模型,探讨了两者的联合设计问题。在已知理想信道状态信息的条件下,本文提出了一种波束赋形和人工干扰的混合协同传输方案,推导了总功率受限条件下的和安全速率,通过两步迭代搜索算法得到了其最佳联合方案,并与一种低复杂度的次佳联合方案进行比较。仿真结果验证了所得联合方案优于次佳联合方案,并进一步改善了AF双向中继系统的安全性能。