C5: A Step Towards Smart World with Enhanced Holistic Wellbeing

Wireless Personal Communications - Internet of things (IoTs) has been the smartest technology proven worldwide these days. The application products of IoTs are Mobile ad hoc network (MANET) and...     

Throughput analysis in censoring-based cooperative cognitive radio network with energy harvesting

An energy harvesting (EH) and cooperative cognitive radio (CR) network (CRN) is studied in this paper where CR users transmit data through a primary user (PU) channel if the channel remains idle, else an optimal number CRs helps in transmission of PU. To achieve the optimum number of CRs (ONCR) involved in cooperation, a novel scheme based on a combination of channel censoring and total error is proposed. The performance of the proposed scheme is investigated under RF harvesting scenario. The EH is dependent on sensing decision and a CR source harvests energy from PU's RF signal. The harvested energy (HE) is split into two parts: One part is used by the CR network (CRN) for its own transmission, and the other part is used for supporting PU. The effect of the energy allocation factor on total throughput is also investigated. New expressions for optimal number of CRs and throughput are developed. The effect of network parameters such as sensing time, censoring threshold, and energy allocation parameter (EAP) on throughput is investigated. Impact of distance between nodes is also studied.     

Filter Bank Channelizers for Multi-Standard Software Defined Radio Receivers

The ability to support multiple channels of different communication standards, in the available bandwidth, is of importance in modern software defined radio (SDR) receivers. An SDR receiver typically employs a channelizer to extract multiple narrowband channels from the received wideband signal using digital filter banks. Since the filter bank channelizer is placed immediately after the analog-to-digital converter (ADC), it must operate at the highest sampling rate in the digital front-end of the receiver. Therefore, computationally efficient low complexity architectures are required for the implementation of the channelizer. The compatibility of the filter bank with different communication standards requires dynamic reconfigurability. The design and realization of dynamically reconfigurable, low complexity filter banks for SDR receivers is a challenging task. This paper reviews some of the existing digital filter bank designs and investigates the potential of these filter banks for channelization in multi-standard SDR receivers. We also review two low complexity, reconfigurable filter bank architectures for SDR channelizers based respectively on the frequency response masking technique and a novel coefficient decimation technique, proposed by us recently. These filter bank architectures outperform existing ones in terms of both dynamic reconfigurability and complexity.     

SAR CHARACTERIZATION OF FOCUSED PLANAR ARRAY OF WATER-LOADED MODIFIED BOX-HORNS FOR HYPERTHERMIA

A 4×4 planar array of modified box-horns as a microwave hyperthermia applicator is theoretically studied to characterize power deposition (SAR) in heating tissue (muscle) at 2450 MHz. A modified box-horn is a novel improved version of conventional box-horn in which horn exciting the box waveguide is flared in both E-and H-planes. Modified box-horn supports TE₁₀ and TE₃₀ modes. The amplitude distribution over the H-plane of the box-horn aperture is a closer approximation to the uniform distribution. It is proposed that the interior of the box-horn be filled with water to provide a better impedance match to biological tissue. By applying Fresnel-Kirchhoff scalar diffraction field theory, the expression for electric field in heating region is derived and distribution of specific absorption rate (SAR) in that region due to planar array of modified box-horns as direct contact applicator is evaluated at 2450 MHz. The results of modified box-horn array are compared with those of a single modified box-horn operating at the same frequency. Results demonstrate that planar array of modified box-horns offers improvement in SAR distribution and penetration depth. It is shown that by changing the phase and amplitude of excitation of the modified box-horns of the array, the relative amplitude and position of the hot spot can be changed. The present analysis is validated through the results obtained by plane wave spectral technique.     

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

High‐quality epitaxy consisting of Al_1?xGa_xN/Al_1?yGayN multiple quantum wells (MQWs) with sharp interfaces and emitting at ≈280 nm is successfully grown on sapphire with a misorientation angle as large as 4°. Wavy MQWs are observed due to step bunching formed at the step edges. A thicker QW width accompanied by a greater accumulation of gallium near the macrostep edge than that on the flat‐terrace is observed on 4° misoriented sapphire, leading to the generation of potential minima with respect to their neighboring QWs. Consequently, a significantly enhanced photoluminescence intensity (at least ten times higher), improved internal quantum efficiency (six times higher at low excitation laser power), and a much longer carrier lifetime are achieved. Importantly, the wafer‐level output‐power of the ultraviolet light emitting diodes on 4° misoriented substrate is nearly increased by 2–3 times. This gain is attributed to the introduction of compositional inhomogeneities in AlGaN alloys induced by gallium accumulation at the step‐bunched region thus forming a lateral potential well for carrier localization. The experimental results are further confirmed by a numerical modeling in which a 3D carrier confinement mechanism is proposed. Herein, the compositional modulation in active region arising from the substrate misorientation provides a promising approach in the pursuit of high‐efficient ultraviolet emitters.     

C60 Concentration Influence on MEH-PPV:C60 Bulk Heterojunction-Based Schottky Devices

We have investigated the effect of C60 concentration on the performance of poly[2-methoxy-5-(2′-ethylhexoxy-p-phenylene vinylene] (MEH-PPV):C60 blend-based Schottky barrier-based devices. Incorporation of C60 in MEH-PPV leads to a red shift and the reduction of intensity in MEH-PPV absorption spectra. The appearance of a C60 characteristic band in the Raman spectra of the composites indicates the presence of C60 in the blends. A FESEM study reveals that the addition of C60 significantly modifies the surface morphology of the blend films. However, higher concentrations (>?5 wt.%) results in agglomeration of C60 particles. Dark I–V measurements allow us to extract various diode parameters including barrier height, ideality factor, and saturation current. Profound variations have been observed in the dominant charge carrier transport mechanism for different C60 concentrations. A photoresponse study demonstrates the enhancement in the photocurrent with the increase in the C60 concentration up to 5 wt.%. Beyond this concentration, agglomeration impedes exciton dissociation and charge transport, which results in a decrease in the photocurrent. Finally, an impedance spectroscopy analysis has been extensively carried out to estimate the internal device parameters, such as junction resistance, capacitance and carrier lifetime. The correlation between these parameters and I–V curves has been established.     

Accurate and Scalable Simulation of Network of Heterogeneous Sensor Devices

Simulation is an important tool to study and analyze sensor networks. Prior work in sensor network simulation focuses on homogeneous devices. In this paper, we present a system that performs scalable and accurate simulation of a network of heterogeneous sensor devices, including both Stargate intermediate level devices and mote devices. We study accuracy, performance, and scalability of our system. The results show that we can achieve accurate functional behavior for both standalone Stargate simulation and ensemble simulation of a Stargate and motes. For motes, we have less than 4.06% cycle count error for all benchmarks and for Stargate, we have less than 10% error for most benchmarks, and less than 12.5% error for all benchmarks. We also achieve less than 3.6% error for all benchmarks when simulating an ensemble of Stargate and motes. Our system is also more scalable than prior work. We can simulate 160 sensor nodes in real time speed and 2,048 sensor nodes with ten times slowdown on a 16-node cluster.

Analysis of optical networks with heterogeneous grooming architectures

Traffic grooming in optical networks employing wavelength division multiplexing (WDM) has gained prominence due to the prevailing disparity between the user requirement and wavelength capacity. Nodes in an optical network get upgraded to the latest grooming technology slowly with time. Hence, WDM grooming networks are expected to employ heterogeneous grooming architectures. In this paper, we develop an analytical model to evaluate the blocking performance of WDM grooming networks with heterogeneous grooming capabilities. We demonstrate the accuracy of the analytical model by comparing the analytical results with that of the simulation. We observe that analytical models with and without precise knowledge of the grooming architectures predict similar performance. The proposed analytical model can be employed by resource placement algorithms that identify a set of nodes and links that need to be upgraded when the resources are limited.     

Four-point probe characterization of 4H silicon carbide

We report on four-point probe measurements on SiC wafers as such measurements give erratic data. Current-voltage measurements on n-type SiC wafers doped to 3 × 10¹⁸ cm⁻³ are non-linear and single probe I-V measurements are symmetrical for positive and negative voltages. For comparison, similar measurements of p-type Si doped to 5 × 10¹⁴ cm⁻³ gave linear I-V, well-defined sheet resistance and the single probe I-V curves were asymmetrical indicating typical Schottky diode behavior. We believe that the reason for the non-linearity in four-point probe measurements on SiC is the high contact resistance. Calculations predict the contact resistance of SiC to be approximately 10¹² Ω which is of the order of the input resistance of the voltmeter in our four-point probe measurements. There was almost no change in two-probe I-V curves when the spacing between the probes was changed from 1 mm to 2 cm, further supporting the idea that the I-V characteristics are dominated by the contact resistance.     

Low leakage and high CMRR CMOS differential amplifier for biomedical application

In order to increase user experience in using near field communication smartcard, analog front-end (AFE) module is required to provide a sufficient and a well-regulated voltage regardless the distance between the card and the reader. A highly stable AFE design for energy harvesting purpose is introduced in this paper. The design consists of antenna, rectifier, voltage limiter, bandgap reference, and low-dropout (LDO) voltage regulator circuit. The antenna is designed to resonate at 13.56 MHz as regulated by ISO/IEC 14443-2. In order to simplify the implementation using 0.18 μm CMOS process, a full-wave rectifier circuit is built of all low-threshold-voltage diode-connected PMOS transistors. To protect the system from undesired excessive input voltages, a voltage limiter circuit is included in the module. Moreover, control and maintain a stable supply voltage for the whole system, a robust LDO voltage regulator and bandgap circuits are specially designed for this purpose. The LDO is able to provide a stable 1.8 V of supply voltage with a sub-1% ripple factor even under a low input current as low as 20 mA.