Enhanced I ON/I OFF in ultra deep submicron CMOS devices using grooved nMOSFETs in comparison to planar nMOSFET

To manage the increasing static leakage in low power applications and reducing ON‐OFF current ratio due to scaling limitations, solutions for leakage reduction as well as improving the current drive of the device are sought at the device design and process technology levels. At the device design level, the important low power variables are the threshold voltage, the gate leakage current, the subthreshold leakage current and the device size. Grooved‐gate MOS devices are considered as the most promising candidates for use in submicron and deep submicron regions as they can overcome the short‐channel effects effectively. By varying the corner angle and adjusting other structural parameters such as junction depth, channel doping concentration, negative junction depth and oxide thickness, leakage current in nMOS devices can be minimised. In this article, 90, 80, 70, 60 and 50?nm devices are simulated using Devedit and Deckbuild module of Silvaco device simulator. The simulated results show that by changing the structural parameters, ON‐OFF current ratio is improved and maintained constant even in the deep submicron region. This study can be helpful for low power applications as the static leakage is drastically reduced, as well as applicable to high speed devices as the ON current is maintained at a constant value. The results are compared with those of corresponding conventional planar devices to bring out the achievements of this study.     

Performance Analysis Over Unified Generalized Composite Fading Model

With the deep study of the Hamming distances of orthogonal arrays (OAs), the application of OAs has penetrated into many fields, one of which is to construct the key predistribution schemes (KPSs) for distributed sensor networks.In this paper, we define the Hamming distance distribution (HDD) of an OA and its uniqueness. Furthermore, we present some OAs with unique HDD. In KPSs based on these OAs, the calculations of metrics for evaluating connectivity and resilience can be simplified. We also illustrate that KPSs based on them have a wider application and better connectivity and resilience than the existing ones.

     

Energy-Effective and Secure Data Transfer Scheme for Mobile Nodes in Smart City Applications

Wireless Personal Communications - Mobile nodes are deployed at different locations in the smart city to collect meaningful information so captured data can be used as an input in different smart...     

A 640-Gbps, 15.2344-b/s/Hz full-duplex optical fiber/wireless single-channel coherent communication system using IQM-based DP-256-QAM and DSP techniques

Photonic Network Communications - A full-duplex optical fiber/wireless single-channel coherent communication system is presented for high-speed data center interconnections. In-phase and quadrature...     

Role of indium in controlling the magnetic properties of bulk and nano magnetic systems

ABSTRACT

In the present ferrites (soft & hard) series, Saturation Magnetization, increases only at lowers concentration of Indium. The cation distribution from Mössbauer analysis indicates that Indium ion at lower concentration (10 to 20%) goes to tetrahedral site only, whereas higher concentration it goes octahedral sites also. Magnetization has been explained on the basis of super exchange hyperfine interactions as well as cation distribution of magnetic ions as per the Neel's two sub lattice model of ferromagnetism. In all the chosen ferrite series magnetic behavior is consistent with substitution of dopant (In³⁺ ions). Ferromagnetic results are further authenticated by Mössbauer Spectroscopic analysis.     

A two-level secure data hiding algorithm for video steganography

Multidimensional Systems and Signal Processing - Sensitive data is exchanged frequently through wired or wireless communication that are vulnerable to unauthorized interception. Cryptography is a...     

Electrical,optical and hole transport mechanism in thin films of poly(3-octylthiophene-co-3-hexylthiophene): Synthesis and characterization

The present study demonstrates the designing of copolymer poly(3-octylthiophene-co-3-hexylthiophene) (P3OT-HT) and study of the hole transport mechanism in it. Detailed structural, optical and thermal studies of P3OT-HT discuss its synthesis aspects. Current density–voltage characteristics have been studied at different temperatures (290–110 K) to understand the mechanism of hole transport in P3OT-HT. It has been established that current density in P3OT-HT thin films is governed by space charge limited conduction with traps distributed exponentially in energy and space. Hole mobility is both temperature and electric field dependent arising due to substituent functional groups attached the polymer backbone.