Electron holographic 3-D nano-analysis of Au/TiO2 catalyst at interface

Three-dimensional (3-D) nanostructures of gold catalysts supported on TiO2 were analysed by electron holography and high-resolution electron microscopy. The contact angle of the gold particle on TiO2 tended to be >90 degrees in the case of gold particles with a size (height) of >4 nm and it tended to be <90 degrees for gold particles with a height of <2 nm. The change in morphology increases the perimeter at the Au/TiO2 interface as the particle size decreases. This change in 3-D structure should be attributed to a change in electronic structure at the interface. It was found that electron holography enabled 3-D analysis at the atomic level and was effective for analysing nanostructured particles.     

Backfire mode zigzag antenna

A backfire mode zigzag antenna is analysed using the method of moments. The effects of the filament length of the zigzag on the -10 dB beam width is calculated. The zigzag antenna is applied to a symmetrical paraboloidal reflector antenna as a primary feed. The reflector antenna shows a relatively constant gain in the communication satellite frequency band 12.25-2.75 GHz.<>     

Optimization of grating duty factor in gain-coupled DFB lasers withabsorptive grating-analysis and fabrication

Grating duty factor strongly affects the performance of gain-coupled (GC) distributed feedback (DFB) laser diodes with an absorptive grating. Through numerical analysis the authors have found an optimum value in the duty factor for their low threshold operation. The minimum threshold gain achievable at this optimum duty factor is found to be almost independent of the order of the grating. According to this prediction, the authors have fabricated GaAlAs/GaAs GC DFB lasers with a third-order absorptive grating where the grating duty factor has been made close to the theoretical optimum value. In 200-μm-long devices with both facets as-cleaved, low CW threshold current of 25 mA, external efficiency of 0.5 mW/mA, and SMSR as high as 45 dB have been obtained, which is qualitatively consistent with the analysis. High yield of single mode oscillation seems to be the result of the gain coupling     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

Driving voltage reduction in a two-phase CCD by suppression ofpotential pockets in inter-electrode gaps

This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed     

Numerical analysis of arbitrarily shaped probe-excited single-armprinted wire antennas

A general integral equation technique is described for analysis of an arbitrarily shaped single-arm printed wire antenna excited through a vertical probe. A unified current integral equation is formulated on the basis of dyadic Green's functions and the reciprocity theorem. The current distribution is obtained by using a parametric moment method in which parameter segments are adopted for the printed wire instead of the commonly employed wire length segments. The radiation field solution involving both the printed antenna and vertical probe is also presented. The validity of the formulation is verified by comparing the numerically obtained input impedance and radiation patterns for a linear antenna and a meander antenna with measured data. A circular open loop and an Archimedian spiral are investigated to illustrate the applicability of the present technique     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

Structural study of degraded ZnMgSSe blue light emitters

Using electroluminescence (EL) topography and transmission electron microscopy (TEM), we investigated the nonluminescent regions which form while current is being injected into ZnMgSSe/ZnSSe/ZnCdSe-based blue light emitters. Small dark spots were observed just after turn-on and spread out forming rough nonluminescent triangles in the <100> directions in the EL image of the active region. TEM studies showed that the small dark spots are pre-existing stacking faults originating at the substrate/epitaxial layer interface. The nonluminescent triangles were found to be a dense region of dislocation dipoles and dislocation loops. Each dipole was aligned along two <110> directions in the {111} planes. The Burgers vectors were of the type a/2<011> inclined at 45° to the (001) junction plane.     

Analysis of antireflection coatings using the FD-TD method with the PML absorbing boundary condition

A step-index optical waveguide with an antireflection coating is analyzed using the finite-difference time-domain (FD-TD) method combined with the perfectly matched layer absorbing boundary condition (PML-ABC). It is demonstrated that the numerical simulations having a dynamic range over that for the Mur absorbing boundary condition can be obtained for a single-layer coating. The analysis of a double-layer coating reveals the transient behavior of reflected fields.     

Wide-wavelength polarization-independent optical modulator based on tensile-strained quantum well with mass-dependent width

We have fabricated a multiple-quantum-well (MQW) waveguide optical modulator incorporating tensile strain and quantum well with mass-dependent width (QWMDW) for the first time. The structure was built on a strain relief InAlGaAs buffer layer grown on a GaAs substrate. Polarization-independent modulation with more than -10 dB extinction (at 8 V reverse voltage) was achieved over a very wide operating range, from 858 to 886 nm wavelength.