Hyoid bone malformation confirmed by 3-dimensional computed tomography

We describe the case of a young woman with pain on turning her head attributable to a malformation of the hyoid bone. Diagnosis was established using spiral computed tomography with the patient's neck in the position of greatest discomfort and with 3-dimensional reconstruction of the hyoid bone. Prior conventional radiography and magnetic resonance imaging did not aid in finding a diagnosis. After surgical removal of both greater cornua of the hyoid bone there was a complete relief of symptoms.     

All a RILEM technical recommendation should be

Editorial

All a RILEM technical recommendation should be     

Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates

We have grown Ge _x Si_1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge_0.19Si_0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge_0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge_0.14Si_0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.     

Filtering for bilinear systems with a lipschitz nonlinearity using LPV approach

This paper deals with the H _?? filtering problem for a class of nonlinear systems. This class of nonlinear systems is composed of a bilinear part and of a lipschitzian one. The use of an unbiasedness condition for the bilinear part (called quasi unbiasedness condition) permits to parameterize the filter matrices through a single gain. Two LPV (Linear Parameter Varying) extensions of the bounded real lemma are used to solve the filtering problem. This approach reduces the conservatism inherent to the boundedness of the inputs. Then the filtering solution is expressed in terms of LMI (Linear Matrix Inequality) to be verified at the vertices of a polytope. A numerical example is finally given to illustrate our approach.     

Microstructure and mechanical properties of modified and non-modified stir-cast Al-Si hypoeutectic alloys

The microstructure and mechanical properties of modified and non-modified stir-cast commercial aluminium alloys A-S7G03 and A-S4G have been investigated. Stir casting of these alloys resulted in spherical and/or rosette shape primary -phase, and the eutectic silicon was broken into miniature needle morphology. This stir-cast structure slightly improved the mechanical properties in comparison to those of conventionally cast alloys, however the fracture of the stir-cast alloys revealed intergranular brittle fracture. The addition of 0.02% strontium, in the form of Al-5 mass% Sr master alloy, during stir casting modified the eutectic silicon into a very fine spheroidal morphology, while the -phase particle showed the same morphology as the stir-cast alloys. This novel structure resulted in significant improvement of mechanical properties. The elongation of the modified stir-cast alloys was five times greater than that of the non-modified one. A transgranular mode of fracture was observed for the modified stircast alloys, moreover smooth ripple and dimple patterns were observed reflecting the high ductility of the modified stir-cast alloys.     

The correlation between the thermoelectric properties and stoichiometry in the boron carbide phase B4C-B10.5C

Electrical conductivity, thermoelectrical power and thermal conductivity measurements on boron carbide samples show that the electrical conductivity follows the small polaron hopping theory and that thermal conductivity occurs by phonon diffusion. The evolution of these properties with carbon content illustrates the particular role played by the 13.3 at% C compound in the phase homogeneity range B_10.5C to B₄C. The value of the figure of merit (0.85×10^–3 K at 1250 K) proves that this particular boron carbide compound could be a very interesting candidate material for high-temperature thermoelectrical conversion.     

Functionalization of PVC by grafting of plasticizing group in a twin screw extruder

Substitution reactions are an appropriate way to attach chemical functions to polymer chains for improving properties and to diversify the application of polymer materials. The stereoselective substitution of chlorine atoms affords a useful way to plasticize polyvinychloride (PVC) by attaching appropriate plasticizing functions (ester group) such as isooctylthiosalicylate. Thus, the substitution of chlorine atoms of PVC by reactant bearing plasticizing groups was carried out in a continuous mixing apparatus such as a twin screw extruder. This continuous chemical engineering process taking place in the extruder is studied as the function of the residence time distribution (RTD) measured by a UV method. This function combined with the kinetics of the chemical reaction allows to define a new function G as the distribution of the extent of conversion by analogy with the RTD function.     

Powerful Parallel and Symmetric 3D Thinning Schemes Based on Critical Kernels

The main contribution of the present article consists of new 3D parallel and symmetric thinning schemes which have the following qualities:

They are effective and sound, in the sense that they are guaranteed to preserve topology. This guarantee is obtained thanks to a theorem on critical kernels;

They are powerful, in the sense that they remove more points, in one iteration, than any other symmetric parallel thinning scheme;

They are versatile, as conditions for the preservation of geometrical features (e.g., curve extremities or surface borders) are independent of those accounting for topology preservation;

They are efficient: we provide in this article a small set of masks, acting in the grid ?³, that is sufficient, in addition to the classical simple point test, to straightforwardly implement them.

     

Structure and functional complementation of engineered fragments from yeast phosphoglycerate kinase

Previous studies have shown that, although the isolated structuraldomains of yeast phosphoglycerate kinase recover a quasi-nativestructure in vitro as well as in vivo, they do not reassociatenor generate a functional enzyme. The aim of this work was firstto study the folding of complementary fragments different fromstructural domains and second to determine the requirementsfor their reassociation and functional complementation. Themethod used for producing rigorously defined fragments consistsof the introduction of a unique cysteinyl residue in the proteinfollowed by a specific cleavage by 5'5'-dithiobis(2-nitrobenzoate)/potassiumcyanide at this residue. Two pairs of complementary fragmentswere thus obtained, 1–96/97–415 and 1–248/249–415.The structure and stabilities of the different fragments werestudied. The short fragments, i.e. 1–96 and 249–415were found to contain some secondary structure, but to havea low stability. Each large fragment has a high structural contentand a stability close to that of the corresponding domain. Incontrast to that observed with the isolated domains, a weakbut significant complementation was observed for the two pairsof fragments; the pair of fragments 1–248/249–415recovered 8% of the activity of the native enzyme upon complementation.An independent refolding of the complementary fragments beforereassociation decreased the yield of complementation for thepair of fragments 1–96/97–415, but did not affectthe complementation for the other pair (1–248/249–415).From the present data and previous work on the isolated domains,it appears that the correct folding of the isolated fragmentsis not a prerequisite for their complementation.     

Rate of adsorption to and desorption from a langmuir surface: The case of zero activation barrier to adsorption without dissociation

Many rate constants of elementary steps on single crystals have been measured. Their pre-exponential factors can now be compared to those calculated by transition state theory. Such a calculation is presented in this Letter with due attention to microscopic reversibility, standard states, and configurational entropy.