Photoelectric conversion of perylenetetracarboxylic diimides in Langmuir-Blodgett films

This article reports the photoelectric conversion of 3, 4, 9, 10-perylenete-tracarboxylic diimides (PTCDI) in multilayers of Langmuir-Blodgett (L-B) films using the photoelectrochemistry technique and absorption spectroscopy. The rate of electron transfer caused by five different PTCDI molecules was determined and the results demonstrate the photoelectric conversion properties of PTCDI molecules in L-B films.     

导电衬垫材料的研究与发展

导电衬垫材料是电子设备中应用最为广泛的一类屏蔽材料，在抑制电子设备缝隙电磁泄漏方面发挥了重要作用。文章结合作者的科研工作，对于衬垫材料的抑制机理、材料类型、屏蔽特性、屏效计算、应用技术、测试方法等关键技术进行了综述，并提出了将来研究发展的方向。     

摩托车液压前叉减震器气柱力的计算研究

通过对摩托车液压前叉减震器的结构和工作原理的分析,建立了前叉管上部密闭空间气体热力学的模型,详细介绍了基于综合反力的气柱力计算方法,给出了减震器结构参数、空气柱体积、气柱力与注油量之间的关系,并与实验测得的曲线进行了对比。结果表明:摩托车液压前叉减震器气柱力与空气柱体积之间的关系基本遵循理想气体多变过程的变化规律,且多变指数n=1~1.05,在实际计算中可以将气柱力的变化过程看作等温过程(即n=1)。     

高密度封装进展之五——采用无源元件和有源元件埋入技术实现的模块内系统封装

介绍了将无源元件和有源元件埋置于基板内部的三维封装模块SIMPACT。其利用热固性树脂和无机填料构成的复合材料,在不造成元件损伤的前提下,能在多层基板的任意层内三维埋入元件,由此构成一个封装内具有系统功能的小型模块。     

薄膜生长及界面结构的计算机模拟

本文对薄膜沉积的形核、生长过程,对同质外延、异质外延生长过程中的某些现象进行了研究。特别是对界面势、界面畸变、界面缺陷以及气相、液相外延生长膜的最后形状等进行了计算机模拟研究,利用已有的实验结果与本工作进行了对比和验证。     

高光洁处理对聚酰亚胺短纤纱及其织物性能的影响

针对聚酰亚胺(PI)短纤维纺纱静电大、成纱毛羽多、后加工摩擦剧烈导致纱线品质大幅恶化的问题,创新提出了在后加工终端对多毛羽PI单纱进行高光洁处理的方法。通过研制纱线高光洁处理装置和理论模拟,分析了该装置引纱区与涡流包缠关键区的作用机制,应用装置的湿热涡流处理多毛羽PI单纱,并将处理前后的PI单纱实施倍捻和织造,获得PI股线及其织物。结果表明：与处理前相比,高光洁处理后的PI单纱有害毛羽去除率为97.69%、耐磨性提高48.84%,PI股线有害毛羽去除率为64.67%、耐磨性提高40.89%;处理后纱线所织造织物的柔软性、透气性、抗起毛起球性、抗静电性均得到改善。     

Densification mechanisms and microstructural evolution during spark plasma sintering of boron carbide powders

Micron-sized boron carbide (B₄C) powders were subjected to spark plasma sintering (SPS) under temperature ranging from 1700 °C to 2100 °C for a soaking time of 5, 10 and 20 min and their densification kinetics was determined using a creep deformation model. The densification mechanism was interpreted on the basis of the stress exponent n and the apparent activation energy Q_d from Harrenius plots. Results showed that within the temperature range 1700–2000 °C, creep deformation which was controlled by grain-boundary sliding or by interface reaction contributed to the densification mechanism at low effective stress regime (n = 2,Q_d = 459.36 kJ/mol). While at temperature higher than 2000 °C or at high stress regime, the dominant mechanism appears to be the dislocation climb (n = 6.11).     

一种生物滞留池砂基填料的配比方法

填料的组成及配比是生物滞留系统功能发挥的关键因素,但当前相关的配比理论和方法还不完善.建立一种以细砂为主体基质的填料配比方法,完善砂基填料配比过程,具有一定的理论和实践价值,依据生物滞留池填料承载的主要功能,阐述了排空时间和有机质含量两个关键参数的指标内涵,论述了指标的作用与功能、指标之间的相互关系及其取值范围,并基于两个指标的约束条件,提出了一种砂基填料的配比方法.基于方法构建的砂基填料生物滞留池,总体效能较好,进一步证明了配比方法的适用性.基于理论计算和试验验证探讨了有机质和渗透系数这两个关键指标的平衡问题.     

半导体激光器辐照损伤效应实验研究进展

半导体激光器(LD)工作在空间辐射或核辐射环境中时,会受到辐照损伤的影响而导致器件性能退化。文章回顾了不同时期研制的LD(从早期的GaAs LD到量子阱LD和量子点LD)在辐照效应实验方面的研究进展,梳理了国际上开展不同辐射粒子或射线(质子、中子、电子、伽马射线)诱发LD辐射敏感参数退化的实验规律,分析总结了当前LD辐照效应实验方法研究中亟待解决的关键技术问题,为今后深入开展LD的辐照效应实验方法、退化规律、损伤机理及抗辐射加固技术研究提供理论指导和实验技术支持。     

Degradation of a COTS linear CCD induced by proton irradiation

A Commercial Off-The-Shelf (COTS) linear CCD irradiated by protons is examined experimentally in this study. A dummy output voltage, the charge transfer efficiency (CTE) and a dark signal were degraded by 2-, 5-, and 10-MeV proton irradiation for comparison. The CCDs irradiated by 2-MeV protons were damaged most seriously, and the CCDs irradiated by 5-MeV protons were damaged more than those irradiated by 10-MeV protons. Biased CCDs were damaged more seriously than unbiased CCDs with the same proton irradiation conditions. The vacancy density and distribution induced by proton displacement damage and the ionizing energy loss induced by proton ionization damage were calculated using TRIM software. The correlation between CTE degradation and nonionizing energy loss is analyzed.