Ga_(1-x)In_xAs_ySb_(1-y)/GaSb LPE生长及其性质研究

报导了在n型(100)GaSb衬底上,温度为520—530℃时,用液相外延的方法实现了组分在0≤x≤0.19,0≤y≤0.14范围内的Ga_(1-x)In_xAs_ySb_(1-y)四元合金半导体的生长。X射线双晶衍射,电子探针及光学显微镜的观察和分析测试表明:所得外延层的表面形貌和界面特性优良,组分分布和层厚均匀,晶格匹配及单晶性能良好。对外延层表面的氧化情况使用Auger能谱仪进行测试分析。另外,对生长中存在的一些问题进行了讨论。     

一种CMOS静态双沿触发器的设计

提出一种ＣＭＯＳ静态双沿触发器结构,以单个锁存器构成记忆单元,而由一特殊的时钟模块产生控制信号,使锁存器在时钟上升和下降沿处瞬时导通,从而形成双沿触发的功能,最小的实现方案只用１４个管子,模拟证明其工作频率可达３００ＭＨｚ以上。     

VTK在医学图像处理实验教学中的应用

随着近年来高新技术的迅速发展,对医学图像处理的需求日益增加,突显出医学图像处理在医务系统中的重要性。为了改善医学类院校的实验教学,提高实验教学质量,将基于对象方法设计的可视化工具VTK应用到医学图像处理的实验教学中,使学生能够直观地学习医学图像处理的基本原理及方法,全程地接受关于医学图像处理方面软件的软件过程培训。     

基于DES密码电路的差分功耗分析仿真研究

差分功耗分析技术是目前应用广泛、技术发展较成熟的非侵入攻击技术,设计了一个功耗分析仿真平台,该平台具有自动化程度高、精度高和仿真速度快的特点.此外,还基于该平台实现了对DES密码电路的差分功耗分析,对数字电视机项盒安全性的提高具有参考意义.     

Effect of Contact Mode on the Electrical Transport and Field‐Emission Performance of Individual Boron Nanowires

Vapor–liquid–solid processing of boron nanowires (BNWs) can be carried out either using a bottom‐up or top‐down growth mode, which results in different contact modes between the nanowire and the substrate. The contact mode may strongly affect the electrical transport and field‐emission performance of the individual boron nanowires grown on a Si substrate. The electrical transport and field‐emission characteristics of individual boron nanowires of different contact modes are investigated in situ using a scanning electron microscope. The contact barriers are very distinct for the different contact modes. Moreover, the transition from a “contact‐limited” to a “bulk‐limited” field‐emission (FE) process is demonstrated in nanoemitters for the first time, and the proposed improved metal–insulator–vacuum (MIV) model may better illustrate the nonlinear behavior of the Fowler‐Nordheim (FN) plots in these nanoscale systems. Individual BNWs with different contact modes have a discrepancy in their emission stability and vacuum breakdown characteristics though they have similar aspect ratios, which suggests that their electrical transport and field‐emission performance are closely related to their contact mode. Boron nanowires grown in the base‐up mode have better field‐emission performances and are more beneficial than those grown in the top‐down mode for various device applications.     

Si(111)衬底高温AlN缓冲层厚度及其结构特性

通过高分辨X射线衍射、光致发光、二次离子质谱（SIMS) 、原子力显微镜和同步辐射X射线衍射分析了AlN缓冲层的厚度对GaN外延层的影响. 实验表明，在缓冲层厚度为13～20nm之间时，GaN外延层的张应力最小，同时晶体质量和光学质量达到最优值. 此外，SIMS分析表明，当AlN缓冲层位于13～20nm之间时，可有效抑制Si的扩散.     

Instruction-Vulnerability-Factor-Based Reliability Analysis Model for Program Memory

Bit faults induced by single-event upsets in instruction may not cause a system to experience an error. The instruction vulnerability factor (IVF) is first defined to quantify the effect of non-effective upsets on program reliability in this paper; and the mean time to failure (MTTF) model of program memory is then derived based on IVF. Further analysis of MTTF model concludes that the MTTF of program memory using error correcting code (ECC) and scrubbing is not always better than unhardened program memory. The constraints that should be met upon utilizing ECC and scrubbing in program memory are presented for the first time, to the best of authors’ knowledge. Additionally, the proposed models and conclusions are validated by Monte Carlo simulations in MATLAB. These results show that the proposed models have a good accuracy and their margin of error is less than 3 % compared with MATLAB simulation results. It should be highlighted that our conclusions may be used to contribute to selecting the optimal fault-tolerant technique to harden the program memory.     

Millileter-Wave Power-Combining Amplifier Using A Broadband Waveguide Combiner

A Millimeter-wave power-combining amplifier based on the multi-way rectangular-waveguide power-dividing/combining circuit has been presented and investigated. The equivalent-circuit approach has been used to analyze the passive power-dividing/combining circuits. An eight-device amplifier is designed and measured to validate the power-dividing/combining mechanism using this technique. Both the measured 10-dB return loss bandwidth and the 2-dB insertion loss bandwidth of the passive system are more than 10?GHz. The measured maximum small-signal gain of the millimeter-wave eight-device power amplifier is 22.5?dB at 26.8?GHz with a 3-dB bandwidth of more than 6?GHz, while the input and output return loss of the proposed eight-device power amplifier is around ?10?dB from 26?GHz to 36?GHz. The measured maximum output power at 1-dB compression from the power amplifier is 28 dBm at 29.5?GHz.     

System Verilog语言在数字系统设计中的应用

使用Verilog进行数字系统设计时会出现对电路结构描述不够简洁、精确的问题.对IEEE的新标准Sys- temVerilog硬件描述语言进行了研究,通过比较两种语言的关键语法结构,分析了上述问题产生的原因和采用Sys- temVerilog语言的解决方法.最后,以HDB3编码电路设计为例,给出采用SystemVerilog语言进行设计、仿真和综合的结果.     

超宽带SiC MESFET器件的研制

采用中国电子科技集团公司第十三研究所自主外延材料及标准工艺平台制作了SiC MESFET芯片,采用管壳内匹配及外电路匹配相结合的方法,制作了超宽带SiC MESFET器件。优化了管壳内匹配形式,采用内匹配技术提高了器件输入阻抗及输出阻抗,采用外电路匹配的方法对器件阻抗进行了进一步提升。通过对输出匹配电路的优化实现了超宽带功率输出。优化了外电路偏置电路,消除了栅压调制效应,提高了电路稳定性。栅宽5 mm器件,脉宽为100μs、占空比为10%脉冲工作,工作电压VDS为48 V,在0.8～2.0 GHz频带内脉冲输出功率为15.2 W(41.83 dBm),功率密度达到3.04 W/mm,功率增益为8.8 dB,效率为35.8%,最终实现了超宽带大功率器件的制作。