Exact Power Function of Compendial Test Requirements for Content Uniformity

The exact distributions associated with the current compendial test requirements are generated by resorting to the well known Computer Intensive Algorithm method to establish the exact percentage point (limit) for RSD, corresponding to each selected cut-off probability level (confidence level) for each of the four possible experimental outcomes based on the USP-NF test requirements. A table is constructed to present the two-dimensional power function. The similarities between these tabular values and the current compendial RSD limits for 10 and 30 dosage units are extremely remarkable.

Minor differences exist, however. It is suggested that both the theoretical as well as the numerical approaches should be carried out to arrive at a comprehensive solution.     

Unity of measurements and its maintenance. Fundamental concepts

We consider the group of fundamental concepts involved in the unity of measurements and its maintenance.Translated from Izmeritel'naya Tekhnika, No. 10, pp. 15–17, October, 1994.     

A 2.2 W, 80 MHz superscalar RISC microprocessor

A 28 mW/MHz at 80 MHz structured-custom RISC microprocessor design is described. This 32-b implementation of the PowerPC architecture is fabricated in a 3.3 V, 0.5 μm, 4-level metal CMOS technology, resulting in 1.6 million transistors in a 7.4 mm by 11.5 mm chip size. Dual 8-kilobyte instruction and data caches coupled to a high performance 32/64-b system bus and separate execution units (float, integer, loadstore, and system units) result in peak instruction rates of three instructions per clock cycle. Low-power design techniques are used throughout the entire design, including dynamically powered down execution units. Typical power dissipation is kept under 2.2 W at 80 MHz. Three distinct levels of software-programmable, static, low-power operation-for system power management are offered, resulting in standby power dissipation from 2 mW to 350 mW. CPU to bus clock ratios of 1×, 2×, 3×, and 4× are implemented to allow control of system power while maintaining processor performance. As a result, workstation level performance is packed into a low-power, low-cost design ideal for notebooks and desktop computers     

Multiple access in wireless digital networks

General principles for the design of a multiple-access system for large numbers of terminals transmitting to a single hub station are discussed. The importance of understanding the nature of the traffic to be carried by the network is emphasized. After some discussion of multiple access options for steady traffic and for slowly varying traffic, the use of random-access protocols for rapidly varying traffic is explained. Two general random-access protocols have been used in a variety of data networks, ALOHA and CDMA. Although these two techniques have different origins and are generally thought of as separate, they are in fact but different ways of looking at the same basic signals. The author shows that the use of multiple spreading codes in a CDMA network is not necessary in order to achieve multiple access capability. A single code can greatly reduce the complexity of a CDMA system. He introduces a spread-spectrum version of an ALOHA channel (spread ALOHA) which is equivalent to a CDMA channel with a common spreading code for all users. The equivalence the author demonstrates opens the door to a variety of techniques commonly used in ALOHA channels which can significantly increase both the throughput and the efficiency of the spread-spectrum channel     

Degrees and diversity at work

A study of of over 3000 engineers and scientists employed in the United States explored the interplay of levels of education with gender and native versus immigrant status. The results suggest that some of these R&D professionals may be underutilised and perhaps less effective than they could be     

Coupled electrothermal modeling of microheaters using SPICE

In this paper,,we report a novel simulation approach that computes both the transient and steady state electrothermal behavior in integrated circuit (IC) compatible thermally isolated microheaters. The resulting distribution of heat, current density and temperature, as well as the electrical terminal behavior have been obtained for realistic device structures. The results are based on a two-dimensional solution of the coupled system of partial differential equations that govern both electrical and heat transport in the device. Unlike standard numerical approaches for coupled systems, our technique is based on the behavioural models, available in most commercial circuit simulators (e.g., HSPICE), that allow synthesis of complex, nonlinear, and coupled circuit elements. The simulation results are in excellent agreement with measurement data of steady state and transient terminal characteristics, obtained under conditions of vacuum. We note that this modeling approach allows concurrent simulation (and subsequent optimization) of the performance of both the control electronics as well as the thermal element(s), within the same IC design environment     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed     

Silicon nitride thin-film deposition by LPCVD with in situ HF vaporcleaning and its application to stacked DRAM capacitor fabrication

Silicon nitride film deposited by LPCVD with newly developed in situ HF vapor cleaning has been studied and applied to fabricate dielectric films for stacked DRAM capacitors. Using this method, an oxide-free surface of underlaid poly-Si can be obtained. Silicon nitride film deposited on this surface has been verified by FTIR measurement to have the stoichiometrically proper composition of Si₃N₄ . However, the film was found to be selectively deposited on poly-Si electrodes. This selective deposition degrades the reliability of the stacked capacitor, because the silicon nitride can not completely cover the periphery of poly-Si electrodes on SiO₂. We propose a simple process that avoids the problem making it possible to apply silicon nitride film to stacked-capacitor fabrication. Stacked capacitors fabricated by this process exhibit very low leakage current and high electrical reliability even for ultra-thin silicon nitride films less than 5 nm thick     

The input impedance of a coaxial line fed probe in a cylindricalwaveguide

Dyadic Green's functions for determining the electric and magnetic fields in a cylindrical waveguide due to a radially directed infinitesimally short electric dipole are derived. The waveguide is shorted at one end and terminated at a perfectly matched load at the other. Both TE and TM modes are considered. Based on these dyadic Green's functions, the input impedance of a coaxial line fed probe in front of the plunger is derived. The formula is expressed in a closed form. Excellent agreement between theoretical results and experimental data for exciting the TE₁₁ mode in the X band for various probe positions is observed     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.