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81.
Power Technology and Engineering - The major results from the survey and geotechnical monitoring during the leveling of the model foundation of the Zagorsk PSP-2 in test site No. 3 are presented....  相似文献   
82.
Journal of Communications Technology and Electronics - Approximate formulas for calculating the coefficient of reflection from an artificial magnetic conductor (AMC) based on a capacitive lattice...  相似文献   
83.
The chromium (Cr) evaporation behavior of several different types of iron (Fe)-based AFA alloys and benchmark Cr2O3-forming Fe-based 310 and Ni-based 625 alloys was investigated for 500 h exposures at 800 °C to 900 °C in air with 10% H2O. The Cr evaporation rates from alumina-forming austenitic (AFA) alloys were ~5 to 35 times lower than that of the Cr2O3-forming alloys depending on alloy and temperature. The Cr evaporation behavior was correlated with extensive characterization of the chemistry and microstructure of the oxide scales, which also revealed a degree of quartz tube Si contamination during the test. Long-term oxidation kinetics were also assessed at 800 to 1000 °C for up to 10,000 h in air with 10% H2O to provide further guidance for SOFC BOP component alloy selection.  相似文献   
84.
Power Technology and Engineering - The monitoring of hydraulic structures as high-risk facilities is discussed. Monitoring should ensure the reliability and functioning of a hydraulic structure...  相似文献   
85.
Theoretical Foundations of Chemical Engineering - A choline chloride–sulfosalicylic acid deep eutectic solvent (DES) is proposed for dissolving the oxides Co(II), Cu(II), Zn(II), Fe(III),...  相似文献   
86.
Atomic Energy - The results of calculations and experimental determination of the neutronics characteristics of the IRT-T research reactor are presented. The IRT-T reactor is a pool reactor with...  相似文献   
87.
Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm2/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm2/Vs, low resistivity of 5.3 × 10?4 Ωcm, and good transmittance of 83.3 %.  相似文献   
88.
Journal of Inorganic and Organometallic Polymers and Materials - The reaction of potassium tetracyanocupprate(I) with triethyltin bromide in presence of phenanthroline (Phen) and quinoxaline (Qox)...  相似文献   
89.
Strength of Materials - The paper addresses the investigation of high-strain rate compressive behavior of Al foams subjected to impact at the intermediate striking velocity ranged from 40 to...  相似文献   
90.
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