Wireless sensor networks (WSN) consist of hundreds of miniature sensor nodes to sense various events in the surrounding environment and report back to the base station. Sensor networks are at the base of internet of things (IoT) and smart computing applications where a function is performed as a result of sensed event or information. However, in resource‐limited WSN authenticating a remote user is a vital security concern. Recently, researchers put forth various authentication protocols to address different security issues. Gope et al presented a protocol claiming resistance against known attacks. A thorough analysis of their protocol shows that it is vulnerable to user traceability, stolen verifier, and denial of service (DoS) attacks. In this article, an enhanced symmetric key‐based authentication protocol for IoT‐based WSN has been presented. The proposed protocol has the ability to counter user traceability, stolen verifier, and DoS attacks. Furthermore, the proposed protocol has been simulated and verified using Proverif and BAN logic. The proposed protocol has the same communication cost as the baseline protocol; however, in computation cost, it has 52.63% efficiency as compared with the baseline protocol. 相似文献
This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain.Phonon scattering,columbic scattering and surface roughness scattering are included to analyze the full mobility model.Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made.The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor(MOS) devices.The results have also been compared with numerically reported results and show good agreement. 相似文献
Proposes a new wrap-around type switch structure based on omega networks. Their uniform interconnection pattern and symmetrical structure helps design a so-called wrap-around switch, The new switch deploys a self-routing mechanism between the input and the output ports. Another characteristic of the switch is the packet filters which are located right in front of the switch elements (SEs). This filtering operation greatly reduces the traffic in the switch fabric by allowing the incoming cells to reach their destination ports without going further in the network 相似文献
Authentication schemes are widely used mechanisms to thwart unauthorized access of resources over insecure networks. Several smart card based password authentication schemes have been proposed in the literature. In this paper, we demonstrate the security limitations of a recently proposed password based authentication scheme, and show that their scheme is still vulnerable to forgery and offline password guessing attacks and it is also unable to provide user anonymity, forward secrecy and mutual authentication. With the intention of fixing the weaknesses of that scheme, we present a secure authentication scheme. We show that the proposed scheme is invulnerable to various attacks together with attacks observed in the analyzed scheme through both rigorous formal and informal security analysis. Furthermore, the security analysis using the widely-accepted Real-Or-Random (ROR) model ensures that the proposed scheme provides the session key (SK) security. Finally, we carry out the performance evaluation of the proposed scheme and other related schemes, and the result favors that the proposed scheme provides better trade-off among security and performance as compared to other existing related schemes.
A two-dimensional (2-D) analytical model for the surface potential variation along the channel in fully depleted dual-material gate silicon-on-insulator MOSFETs is developed to investigate the short-channel effects (SCEs). Our model includes the effects of the source/drain and body doping concentrations, the lengths of the gate metals and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide and also the silicon thin film. We demonstrate that the surface potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain resulting in suppressed SCEs like the hot-carrier effect and drain-induced barrier-lowering (DIBL). The model is extended to find an expression for the threshold voltage in the submicrometer regime, which predicts a desirable "rollup" in the threshold voltage with decreasing channel lengths. The accuracy of the results obtained using our analytical model is verified using 2-D numerical simulations. 相似文献