Realization of all-optical flip-flop using directionally coupled bistable laser diode

A novel all-optical flip-flop device has been realized using a directionally-coupled bistable laser diode (DC-BLD). We have fabricated the DC-BLD by a conventional fabrication technique of LDs. To separate the adjacent electrodes of the directional coupler, an oblique electron-beam evaporation technique was developed. By this self-align process, the two adjacent waveguides of the directional coupler were electrically isolated without employing any additional lithography step. Using the fabricated DC-BLD, all-optical flip-flop has been demonstrated due to the nonlinear effects of the saturable absorber and the directional coupler. The flip-flop operation has been achieved with sufficiently small input optical power level around 0 dBm.     

Electromagnetically coupled curl antenna

The radiation characteristics of a curl antenna excited by an L-wire are presented. The frequency bandwidth for a 3 dB axial ratio criterion is ~6%, with a nearly resistive input impedance of 75 Ω. An array antenna of the 36 curls shows a gain of 23 dB with an aperture efficiency of 73%     

Microstructural analysis of NiInGe ohmic contacts for n-type GaAs

NiInGe ohmic contact materials, which are attractive to use in future GaAs devices, were previously developed in our laboratories. Although the NiInGe contacts provided low contact resistances of about 0.3 Ω-mm and excellent thermal stability, further reduction of the contact resistance (R_C) of the NiInGe contacts was mandatory to use these contacts in submicron devices. In this paper, the microstructural parameters, which influence the R_C values, were investigated by correlating the R_C values with the microstructure at the interface between the contact materials and the GaAs substrate. The R_C values of the NiInGe contacts were found to depend strongly on the volume fraction and the In concentration (x) of the In_xGa_1−xAs compound semiconductor layers, which were formed at the metal/GaAs interface. Both the volume fraction and the In concentration of the In_xGa_1−xAs layers were found to depend on the thickness of the In layer used in the NiInGe contact and the annealing temperature to form the ohmic contact. A R_C value of 0.18 Ω-mm was obtained for the Ni (18 nm)/In (13 nm)/Ge (30 nm) contact (where a slash “/” indicates the deposition sequence) after annealing at temperature of 650°C for 5 sec.     

Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel

2D silicon nanomaterials have unique potential for use in applications owing to their many different exotic electronic properties. Field‐effect transistors are fabricated based on free‐standing silicanes through a solution process. Owing to the sensitive surface and the nanometer thickness, the devices require the use of fabrication conditions similar to those of lithium‐ion batteries to prevent oxidation of the sheets. Reliable transistor performance is observed at room temperature in a channel thinner than 3 nm, as drain voltage dependent transfer curves current modulation, depending on the edge effect of the silicane, although the transistor property is modest (hole mobility of 1.8 cm² V^?1 s^?1). The results suggest the feasibility of other air‐sensitive 2D nanomaterials for applications in nanoelectronic devices.     

On a compound redundant system with the particular switching devices

This paper considers a standby-redundant system consisting of 2 systems, in which one is main and the other is its standby-redundant system. These systems also consist of 2 subsystems connected in series, in which each one is composed of several identical units connected in parallel.A feature of this system is that the system has 2 switching devices connecting subsystems, in addition to one connecting main and standby systems, in order to utilize surviving units as many as possible. In this consideration it is assumed that all the units are not repairable.We shall obtain the system reliability and the mean time to system failure, and examine numerically the effects of this model to the usual one without particular switching devices.     

Influence of facet reflection on the performance of a DFB laserintegrated with an optical amplifier/modulator

The influence of output facet reflection on characteristics of a monolithically integrated optical device consisting of a distributed feedback (DFB) laser and an optical amplifier/modulator is analyzed. Basic equations used for the analysis are the characteristic equation for a DFB laser and the rate equations. As a result, it is known that static and dynamic properties of such optical integrated devices are seriously degraded by the optical feedback from the output facet. It is concluded that the power reflectivity of the output facet should be reduced to at least less than 0.1% for the integrated region to work as an optical amplifier and less than 0.01% as an intensity modulator     

Low-profile helical array antenna fed from a radial waveguide

A low-profile array antenna composed of two-turn 4° pitch angle helices is designed for a frequency band of 11.7 GHz to 12.0 GHz. The feed wire of each helix is inserted into a radial waveguide through a small hole and excited by a traveling wave flowing in the transverse electromagnetic mode between the two parallel plates of the waveguide. The measured aperture efficiency shows a maximum value of 77% for a beam radiated in the normal direction and 69% for a 30° beam tilt     

Gain-coupled distributed feedback semiconductor lasers with anabsorptive conduction-type inverted grating

A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are fabricated using two-step OMVPE. By inverting the conduction type of the absorptive region, threshold current is lowered by 10 mA, which is to compensate for the threshold increase due to extra absorption. In addition, nonlinear output property associated with the saturable nature of the absorption is eliminated. An ultralow chirping capability under gain switching high speed modulation and the narrow linewidth nature of this laser are experimentally studied     

Metal Single-Atom Cocatalyst on Carbon Nitride for the Photocatalytic Hydrogen Evolution Reaction: Effects of Metal Species

Single-atom (SA) catalysts exhibit high activity in various reactions because there are no inactive internal atoms. Accordingly, SA cocatalysts are also an active research fields regarding photocatalytic hydrogen (H₂) evolution which can be generated by abundant water and sunlight. Herein, it is investigated whether 10 transition metal elements can work as an SA on graphitic carbon nitride (g-C₃N₄; i.e., gCN), a promising visible-light-driven photocatalyst. A method is established to prepare SA-loaded gCN at high loadings (weight of ≈3 wt.% for Cu, Ni, Pd, Pt, Rh, and Ru) by modulating the photoreduction power. Regarding Au and Ag, SAs are formed with difficulty without aggregation because of the low binding energy between gCN and the SA. An evaluation of the photocatalytic H₂-evolution activity of the prepared metal SA-loaded gCN reveals that Pd, Pt, and Rh SA-loaded gCN exhibits relatively high H₂-evolution efficiency per SA. Transient absorption spectroscopy and electrochemical measurements reveal the following: i) Pd SA-loaded gCN exhibits a particularly suitable electronic structure for proton adsorption and ii) therefore they exhibit the highest H₂-evolution efficiency per SA than other metal SA-loaded gCN. Finally, the 8.6 times higher H₂-evolution rate per active site of Pd SA is achieved than that of Pd-nanoparticles cocatalyst.     

Effects of uni-axial mechanical stress on IGBT characteristics

This paper describes the impacts of mechanical stress on vertical power devices. The stress dependence of the DC characteristics of trench insulated gate bipolar transistors (IGBTs) was measured. The experimental results could be reproduced by the device simulation, which included stress dependence models of the carrier mobility and the band gap. We found that the stress dependence of the on-state voltage mainly arose from the MOSFET portion of the IGBT. Using the device simulation, we estimated the effects of mechanical stress on the surge voltage and the saturation current, which give us the important information for designing a power module with higher ruggedness.