Analysis of the interference immunity during reception of ultrawideband chaotic signals in an indoor multipath propagation environment

The models of indoor multipath propagation of wideband and ultrawideband (UWB) signals are considered. Application of these models is recommended by an IEEE working group. In the framework of one of the models corresponding to the line-of-sight conditions, the algorithms for reception of UWB chaotic signals in the presence of reflection from multiple surfaces (echo signals) are proposed and analyzed. The efficiency of reception techniques is estimated from the viewpoint of the error probabilities. Limitations caused by the specific properties of echo signals are revealed, and the methods for improvement of reception quality are discussed.     

Multipath structure for FSR expansion in waveguide-based optical ring resonator

A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator.     

Low Temperature Physics at the Laboratoire National des Champs Magnétiques Pulsés in Toulouse

An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned.     

温州市龙湾段标准堤工程软土地基变形原位观测

温州市龙湾段标准堤地基土中普遍存在一层海积淤泥,其强度低,压缩性高,承载力低,不能满足标准堤填筑及水闸运行的要求。采用预压法进行地基处理,取得的地基沉降、水平位移、孔隙水压力等现场观测资料,总结分析了该段海积淤泥地基的变形规律和特点。并提供了有关的原型观测数据,其沉降曲线规律性较好。     

Mechanical spectroscopy in commercial Fe–6 wt.% Si alloys between 400 and 1000 K

Mechanical spectroscopy, neutron diffraction and differential scanning calorimetry (DSC) were performed on commercial Fe–6 wt.% Si alloy after quenching from high temperature. The damping spectrum shows a peak at around 800 K and an associated modulus defect. The modulus shows an increase during the second and subsequent heating runs. In addition, an anomaly in the modulus behavior has been found at around 400 K. Different thermal treatments allows to obtain two different recovery degrees of the quenched-in defects. The influence of the recovery degree on the 800 K internal friction peak and on the anelastic modulus has been evaluated and confirm the validity of the grain boundary mechanism associated to this peak. Experimental results are discussed on the basis of recovery and ordering processes.     

Modeling subthreshold SOI logic for static timing analysis

A simple, yet realistic physics-based model is introduced to describe the subthreshold drain current of a MOSFET taking into account the body- and drain-voltage dependencies, including the short channel effects. This model, verified by SPICE simulations, describes adequately the pseudotriode and pseudosaturation regions of MOS transistors operated below V/sub T/. It can be applied for predicting bulk- or partially depleted (PD) SOI CMOS circuit operation. Analytical expressions derived for the logic switching threshold and delay are applied to predict the performance of CMOS-SOI inverters.     

Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers

Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 /spl Aring/ and standard deviation of 7 /spl Aring/ is about 12 meV.