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This paper presents a potentially practical treatment of dynamic operator-system interactions. The approach employs a dynamic event tree framework to explicitly address plant dynamics, system indications, crew-plant interactions, time available, crew cognition, errors of commission (mistakes), and multiple planning and diagnosis possibilities. The approach is applied in an analysis of a hypothesize medium break loss of coolant accident for a test reactor that occurs during plant shutdown. This transient was selected on the basis of: a significant cognitive component being present, high consequences being associated with operator actions, and the importance of event timing to scenario progression. The results presented show how quantitative risk predictions are affected by the treatment of dynamics, and demonstrate how non-proceduralized recovery actions and a number of performance shaping factors (e.g., crew experience, stress, and confidence) can be explicitly treated. Insights and lessons learned regarding the performance of a dynamic assessment are also presented.  相似文献   
143.
"Photolithographic packaging (PL-pack) with selectively occupied repeated transfer (SORT)" is proposed for optoelectronic microsystem integration. PL-pack with SORT integrates different types of thin-film device pieces into one substrate with desired configurations using an all-photolithographic process. A process design example is presented for a scalable film optical link multichip-module (S-FOLM). A preliminary estimation reveals that PL-Pack with SORT will achieve III-V epitaxial material saving of <1/100 and module cost reduction of <1/10, compared with flip-chip-bonding-based packaging. The result indicates that the process will save on cost and resources simultaneously. A critical issue is how to simplify the procedure for distributing thin-film device pieces onto a substrate. SORT is found to reduce the distribution step count typically by factor of <1/10-1/10000 compared with the conventional one-by-one method. PL-pack with SORT will be extended to the 3R process (reduce, reuse, recycle), which is generally applied to a variety of device/module fabrications  相似文献   
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A false left ventricular aneurysm and coronary artery aneurysm were discovered in a 29 year old patient with Beh?et's syndrome. The operation under cardiopulmonary bypass consisted of closing the neck of the false aneurysm by an endo-aneurysmal approach with a Gore-Tex patch. The coronary artery aneurysms were respected. There were no postoperative complications. Cardiac involvement is rare in Beh?et's syndrome (6%). The originality of this case is the association of two aneurysmal pathologies: the coronary and ventricular aneurysms due to the angiitis and the myocardial fragility induced by ischaemia.  相似文献   
147.
The plasma membrane (PM) H(+)-ATPase has been proposed to play important transport and regulatory roles in plant physiology, including its participation in auxin-induced acidification in coleoptile segments. This enzyme is encoded by a family of genes differing in tissue distribution, regulation, and expression level. A major expressed isoform of the maize PM H(+)-ATPase (MHA2) has been characterized. RNA gel blot analysis indicated that MHA2 is expressed in all maize organs, with highest levels being in the roots. In situ hybridization of sections from maize seedlings indicated enriched expression of MHA2 in stomatal guard cells, phloem cells, and root epidermal cells. MHA2 mRNA was induced threefold when nonvascular parts of the coleoptile segments were treated with auxin. This induction correlates with auxin-triggered proton extrusion by the same part of the segments. The PM H(+)-ATPase in the vascular bundies does not contribute significantly to auxin-induced acidification, is not regulated by auxin, and masks the auxin effect in extracts of whole coleoptile segments. We conclude that auxin-induced acidification in coleoptile segments most often occurs in the nonvascular tissue and is mediated, at least in part, by increased levels of MHA2.  相似文献   
148.
This article outlines very briefly our present state of knowledge concerning the growth and characterization of group III-nitrides by plasma assisted molecular beam epitaxy (PA-MBE) and also discusses the application of MBE for devices. We begin with a discussion of our current knowledge of the growth kinetics for both binary compounds (AlN, GaN and InN) and for alloys with mixed group III (InGaN and AlGaN) and group V (AlAsN and GaAsN) elements. We emphasize the important role that the choice of substrates, stoichiometry and buffer layers play in determining the morphology of GaN. We comment briefly on the problems of doping group III-nitrides, particularly p-type, and finally we mention the present status of devices grown by MBE compared with similar devices grown by metal-organic vapour phase epitaxy (MOVPE). © 1998 Chapman & Hall  相似文献   
149.
The low temperature lifetime of electrons excited in the 2p?1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1so?2p?1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.  相似文献   
150.
The laminar flame theory under the condition of minimum entropy production is presented. The equation of the temperature boundary layer is obtained for Le=0, and its general solution is found. It is shown that the mechanism of laminar flame propagation can be treated from the viewpoint of stationary thermal explosion in a cylindrical vessel of radius 2 as the critical regime in which the burnup is taken into account in an unusual form. Tomsk. Translated from Fizika Goreniya i Vzryva, Vol. 29, No. 5, pp. 22–30, September–October, 1993  相似文献   
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