Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.     

Transparent,Stimuli‐Responsive Films from Cellulose‐Based Organogel Nanoparticles

The use of bio‐based nanoscaled cellulose for the construction of novel functional materials has progressed rapidly over the past years. In comparison to most of studies starting with the hydrophilic nanoscaled cellulose, surface‐stearoylated cellulose nanoparticles (SS‐CNPs) are used in this report for the construction of multifunctional, responsive films. SS‐CNPs with an average size of 115 ± 0.5 nm are obtained after the surface‐modification of cellulose under heterogeneous conditions. Crystalline cellulose core is present within SS‐CNPs according to solid‐state ¹³C nuclear magnetic resonance (NMR) spectroscopy. SS‐CNPs show excellent dispersibility in nonpolar solvents and form temperature‐responsive organogels in tetrahydrofuran (THF) at low temperature or after long time storage at room temperature. Moreover, transparent and self‐standing films of SS‐CNPs from their THF‐suspension show solvent‐responsive surface wettability and responsive shape‐memory property. SS‐CNPs can also be used for the fabrication of nanocomposite films together with nonpolar compounds, such as (2‐stearoylaminoethyl) rhodamine B. Thus, these novel SS‐CNPs derived from sustainable cellulose fibers are promising candidates for the construction of novel functional materials.     

Avalanche‐Discharge‐Induced Electrical Forming in Tantalum Oxide‐Based Metal–Insulator–Metal Structures

Oxide‐based metal–insulator–metal structures are of special interest for future resistive random‐access memories. In such cells, redox processes on the nanoscale occur during resistive switching, which are initiated by the reversible movement of native donors, such as oxygen vacancies. The formation of these filaments is mainly attributed to an enhanced oxygen diffusion due to Joule heating in an electric field or due to electrical breakdown. Here, the development of a dendrite‐like structure, which is induced by an avalanche discharge between the top electrode and the Ta₂O_5‐x layer, is presented, which occurs instead of a local breakdown between top and bottom electrode. The dendrite‐like structure evolves primarily at structures with a pronounced interface adsorbate layer. Furthermore, local conductive atomic force microscopy reveals that the entire dendrite region becomes conductive. Via spectromicroscopy it is demonstrated that the subsequent switching is caused by a valence change between Ta⁴⁺ and Ta⁵⁺, which takes place over the entire former Pt/Ta₂O_5‐x interface of the dendrite‐like structure.     

Growth of Corynebacterium bovis in mammary secretions during physiological transitions of the bovine mammary gland

An in vitro microassay was used to evaluate growth of five strains of Corynebacterium bovis in mammary secretions collected from quarters of five Holstein cows at 0, 14, and 28 d of involution, at parturition, and 14 d after parturition. Variation in growth among different strains of Corynebacterium bovis was observed. Corynebacterium bovis grew well in mammary secretions obtained at the last milking of lactation, at parturition, and 14 d after parturition. However, growth of four strains of Corynebacterium bovis in mammary secretions obtained at 14 and 28 d of involution was reduced significantly. In contrast, a streptomycin-resistant strain of Corynebacterium bovis grew well in mammary secretions obtained during involution. These data suggest that mammary secretions support growth of Corynebacterium bovis during lactation but inhibit growth during the nonlactating period. Inhibition of growth in secretions collected during the nonlactating period may be associated with the high rate of spontaneous elimination of Corynebacterium bovis intramammary infection from cessation of milking to parturition. Conversely, enhanced growth in milk may be related to persistent Corynebacterium bovis intramammary infections during lactation.     

Giant Anomalous Hall and Nernst Conductivities in Magnetic All-d Metal Heusler Alloys

All-d Heuslers are a category of novel compounds combining versatile functionalities such as caloric responses and spintronics with enhanced mechanical properties. Despite the promising transport properties (anomalous Hall (AHC) and anomalous Nernst (ANC) conductivities) shown in the conventional Co₂XY Heuslers with p-d hybridization, the all-d Heuslers with only d-d hybridization open a new horizon to search for new candidates with outstanding transport properties. In this work, the AHC and ANC are evaluated for thermodynamically stable ferro/ferri-magnetic all-d-metal regular Heusler compounds based on high-throughput first-principles calculations. It is observed that quite a few materials exhibit giant AHCs and ANCs, such as cubic Re₂TaMn with an AHC of 2011 S cm^-1, and tetragonal Pt₂CrRh with an AHC of 1966 S cm^-1 and an ANC of 7.50 A m^-1K^-1. Comprehensive analysis on the electronic structure reveals that the high AHC can be attributed to the occurrence of the Weyl nodes or gapped nodal lines in the neighborhood of the Fermi level. The correlations between such transport properties and the number of valence electrons are also thoroughly investigated, which provides a practical guidance to tailor AHC and ANC via chemical doping for transverse thermoelectric applications.     

HIST: A hierarchical self test methodology for chips,boards, and systems

This article presents the HIST approach, which allows the automated insertion of self test hardware into hierarchically designed circuits and systems to implement the RUNBIST instruction of the IEEE 1149.1 standard. To achieve an optimal and throughout self testable system, the inherent design hierarchy is fully exploited. All chips and boards are provided with appropriate test controllers at each hierarchy level. The approach is able to detect all those faults, which are in the scope of the underlying self test algorithms. In this paper the hierarchical test architecture, the test controllers as well as all necessary synthesis procedures are presented. Finally a successful application of the HIST approach to a cryptography processor is described.     

An integrated 8-12 GHz fractional-N frequency synthesizer in SiGe BiCMOS for satellite communications

We present an integrated fractional-N low-noise frequency synthesizer for satellite applications. By using two integrated VCOs and combining digital and analog tuning techniques, a PLL lock range from 8 to 12 GHz is achieved. Due to a small VCO fine tuning gain and optimized charge pump output biasing, the phase noise is low and almost constant over the tuning range. All 16 sub-bands show a tuning range above 900 MHz each, allowing temperature compensation without sub-band switching. This makes the synthesizer robust against variations of the device parameters with process, supply voltage, temperature and aging. The measured phase noise is ?87 dBc/Hz and ?106 dBc/Hz at 10 kHz and 1 MHz offset, respectively. In integer-N mode, phase noise values down to ?98 dBc/Hz at 10 kHz and ?111 dBc/Hz at 1 MHz offset, respectively, were measured.     

An improved BEM model for the power curve prediction of stall‐regulated wind turbines

Blade element momentum (BEM) theory is the standard computational technique for the prediction of power curves of wind turbines; it is based on the two‐dimensional aerodynamic properties of aerofoil blade elements and some corrections accounting for three‐dimensional wing aerodynamics. Although most BEM models yield acceptable results for low‐wind and pitch‐controlled regimes where the local angles of attack are small, no generally accepted model exists up to date that consistently predicts the power curve in the stall regime for a variety of blade properties and operating conditions. In this article we present a modified BEM model which satisfactorily reproduces the power curves of four experimental wind turbines reported in the literature, using no free fit parameters. Since these four experimental cases comprehend a great variety of conditions (wind tunnel vs field experiments, different air densities) and blade parameters (no twist and no taper, no taper but twist, both twist and taper, different aerofoil families), it is believed that our model represents a useful working tool for the aerodynamic design of stall‐regulated wind turbines. Copyright © 2004 John Wiley & Sons, Ltd.