The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions.     

Evaluation of Atmospheric and Vacuum Residues Using Molecular Distillation and Optimization

The term atmospheric residue describes the material at the bottom of the atmospheric distillation tower having a lower boiling point limit of about 340°C; the term vacuum residue (heavy petroleum fractions) refers to the bottom of the vacuum distillation, which has an atmospheric equivalent boiling point (AEBP) above 540°C. In this work, the objective is to evaluate the behavior of different kinds of Brazilian atmospheric and vacuum residues using molecular distillation. The Falling Film Molecular Distillator was used. For the results obtained through this process, a significant range of temperature can be explored avoiding the thermal decomposition of the material. So these results are very important to the refinery decisions and improvements. The Experimental Factorial Design results showed that the temperature has more influence on the process than the feed flow rate, when a higher percentage of distillate is required.     

Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

Java technology comes to real-time applications

The Java language provides many benefits to application developers, including memory access safety, platform portability, and very high levels of productivity. However, some of the very Java language features that bring these benefits, such as the garbage collector, have also made it difficult or impossible to create applications with bounded response time characteristics. Implementations of the real-time specification for Java (RTSJ) are now available that have proven to be capable of supporting all aspects of real-time systems. This paper discusses the principal concepts underlying the RTSJ, use of the RTSJ's features in real-time applications, the most critical considerations that must be addressed by RTSJ-compliant Java virtual machine implementers, and two example RTSJ-compliant application designs that can fully utilize the RTSJ to portably support their performance requirements.     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

X-ray diffraction and Raman scattering in SbSI nanocrystals

Lattice structure and rod-like shaped SbSI nanocrystals obtained by ball milling with rod thickness down to 70 nm, as estimated from X-ray diffraction (XRD) and electron microscopy, is similar to that of the bulk crystals. The dependence of the grain size on the milling duration is discussed in view of the chain-like crystalline structure of SbSI. Possible factors, responsible for the observed Raman line broadening, are discussed, scattering by surface phonons being considered the predominant one.     

Review Processing, properties and applications of reactive silica from rice husk—an overview

Rice husk is an abundantly available waste material in all rice producing countries. In certain regions, it is sometimes used as a fuel for parboiling paddy in the rice mills. The partially burnt rice husk in turn contributes to more environmental pollution. There have been efforts not only to overcome this but also to find value addition to these wastes using them as secondary source of materials. Rice husk contains nearly 20% silica, which is present in hydrated amorphous form. On thermal treatment, the silica converts to crystobalite, which is a crystalline form of silica. However, under controlled burning conditions, amorphous silica with high reactivity, ultra fine size and large surface area is produced. This micro silica can be a source for preparing advanced materials like SiC, Si₃N₄, elemental Si and Mg₂Si. Due to the high pozzolanic activity, this rice husk silica also finds application in high strength concrete as a substitute for silica fume. Possibility of using this silica as filler in polymers is also studied. The present paper is an attempt to consolidate and critically analyse the research work carried out so far on the processing, properties and application of rice husk silica in various laboratories and also highlighting some results on the processing and characterization of RHA and reactive silica obtained from it in the authors' laboratory.