Watermark embedded in permuted domain

A scheme is proposed in which a watermark is transformed and then used to modify the third, fourth, or fifth bit of the pixels in a permuted image according to a chaotic binary sequence. The PSNR is larger than 44 dB and the extracted watermarks are still recognisable when the compression ratio reaches 39%     

An experimentally validated analytical model for gate line-edgeroughness (LER) effects on technology scaling

This letter introduces an analytical model to represent line-edge roughness (LER) effects on both off-state leakage and drive current for sub-100-nm devices. The model partitions a given device into small unit cells along its width, each unit cell assumes a constant gate length (i.e., cell's width is small compared to LER spatial frequency). An analytical model is used to represent saturated threshold voltage dependency on the unit cell's gate length. Using this technique, an efficient and accurate model for LER effects (through V_ts variations) on off-state leakage and drive current is proposed and experimentally validated using 193 and 248 nm lithography for devices with 80-nm nominal gate lengths. Assuming that the deviation from the ideal 0-LER case remains constant from generation to generation, the model predicts that 3 nm or less LER is required for 50-60-nm state-of-the-art devices in the 0.1-μm technology node. Based on data presented, we suggest that the LER requirement for this technology node is attainable with an alternated phase-shift type of patterning process     

A multimodule parallelable series-connected PWM voltage regulator

This paper presents the analysis and design of a single-phase voltage regulator (VR) and its multinodule parallel control. The VR employs the pulsewidth modulation three-arm rectifier-inverter topology. The inverter side adjusts the load voltage with the series regulating structure aiming to minimize converter capacity and attain higher efficiency. The rectifier side regenerates the load power and executes the active power filter function to achieve unity power factor. Based on such high-performance VR, a resistive droop method combined with the P-V droop and Q-δ shift scheme is then proposed to control the current sharing such that multiple VRs can be paralleled directly without any control interconnection. The proposed parallel control technique possesses the features of fast response, precise voltage regulation, equal fundamental and harmonic current sharing, tolerance for parameter mismatch, and so on. Two prototype 1 KVA VRs are implemented, and the effectiveness is demonstrated by some simulation and experimental results     

Genetic algorithm assisted joint multiuser symbol detection andfading channel estimation for synchronous CDMA systems

A novel multiuser code division multiple access (CDMA) receiver based on genetic algorithms is considered, which jointly estimates the transmitted symbols and fading channel coefficients of all the users. Using exhaustive search, the maximum likelihood (ML) receiver in synchronous CDMA systems has a computational complexity that is exponentially increasing with the number of users and, hence, is not a viable detection solution. Genetic algorithms (GAs) are well known for their robustness in solving complex optimization problems. Based on the ML rule, GAs are developed in order to jointly estimate the users' channel impulse response coefficients as well as the differentially encoded transmitted bit sequences on the basis of the statistics provided by a bank of matched filters at the receiver. Using computer simulations, we showed that the proposed receiver can achieve a near-optimum bit-error-rate (BER) performance upon assuming perfect channel estimation at a significantly lower computational complexity than that required by the ML optimum multiuser detector. Furthermore, channel estimation can be performed jointly with symbol detection without incurring any additional computational complexity and without requiring training symbols. Hence, our proposed joint channel estimator and symbol detector is capable of offering a higher throughput and a shorter detection delay than that of explicitly trained CDMA multiuser detectors     

Ambient‐Stable,Annealing‐Free,and Ambipolar Organic Field‐Effect Transistors Based on Solution‐Processable Poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene) without Long Alkyl Side Chains

An ambipolar conjugated polymer CF₃‐PBTV, poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene), consisting of thienylenevinylene as the donor and trifluoromethyl‐substituted biphenyl as the acceptor has been successfully synthesized. CF₃‐PBTV shows solution‐processability without electrically insulating long alkyl side chains. Grazing incidence X‐ray diffraction results suggest a nearly equal population of flat‐on and end‐on domains in CF₃‐PBTV thin film. The excellent ambipolarity of CF₃‐PBTV is demonstrated by well‐equivalent charge mobilities of 0.065 and 0.078 cm² V^?1 s^?1 for p‐ and n‐channel, respectively. The organic field‐effect transistors (OFET) also shows very high on/off ratio (≈10⁷) which is attributed to the relatively large bandgap and low‐lying highest occupied molecular orbital (HOMO) of CF₃‐PBTV. The OFET performance barely changes after the device is stored in ambient conditions for 90 days. The ambient‐stability is attributed to the enhanced oxidative stability from its low‐lying HOMO and the better moisture resistance from its fluorine contents. The performance of CF₃‐PBTV based OFET is annealing independent. It is noteworthy that the solution‐processable, ambipolar, and thienylenevinylene‐containing conjugated polymer without any long alkyl side chains is reported for the first time. And to the best of our knowledge, it is the first ambient‐stable, annealing‐free OFET with well‐equivalent ambipolarity.     

Performance enhancement of III–V compound multijunction solar cell incorporating transparent electrode and surface treatment

To enhance the performance of tandem‐type III–V compound multijunction solar cells, the transparent indium‐tin‐oxide (ITO) film was used to replace conventional metal electrode for increasing the incident light area. For performing ohmic contact between the n‐AlInP window layer and the ITO film, a transition layer of Au/AuGeNi thin metals was used and investigated. Besides, to improve ohmic performance and to passivate the surface states, (NH₄)₂S_x surface treatment was used. The conversion efficiency of the (NH₄)₂S_x‐treated triple‐junction solar cells was increased more than 3.09%. Furthermore, an improved oblique SiO₂/SiO₂/ITO triple antireflection structure was designed to reduce the reflectivity of illuminating sunlight. The conversion efficiency of the (NH₄)₂S_x‐treated triple‐junction solar cell with improved antireflection structure could be improved more than 4.23%. Simple and effective approaches were designed to improve the performances of tandem‐type III–V triple‐junction solar cells. Copyright © 2010 John Wiley & Sons, Ltd.     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.     

Reversible Crumpling of 2D Titanium Carbide (MXene) Nanocoatings for Stretchable Electromagnetic Shielding and Wearable Wireless Communication

In the emerging Internet of Things, stretchable antennas can facilitate wireless communication between wearable and mobile electronic devices around the body. The proliferation of wireless devices transmitting near the human body also raises interference and safety concerns that demand stretchable materials capable of shielding electromagnetic interference (EMI). Here, an ultrastretchable conductor is fabricated by depositing a crumple‐textured coating composed of 2D Ti₃C₂T_x nanosheets (MXene) and single‐walled carbon nanotubes (SWNTs) onto latex, which can be fashioned into high‐performance wearable antennas and EMI shields. The resulting MXene‐SWNT (S‐MXene)/latex devices are able to sustain up to an 800% areal strain and exhibit strain‐insensitive resistance profiles during a 500‐cycle fatigue test. A single layer of stretchable S‐MXene conductors demonstrate a strain‐invariant EMI shielding performance of ≈30 dB up to 800% areal strain, and the shielding performance is further improved to ≈47 and ≈52 dB by stacking 5 and 10 layers of S‐MXene conductors, respectively. Additionally, a stretchable S‐MXene dipole antenna is fabricated, which can be uniaxially stretched to 150% with unaffected reflected power <0.1%. By integrating S‐MXene EMI shields with stretchable S‐MXene antennas, a wearable wireless system is finally demonstrated that provides mechanically stable wireless transmission while attenuating EM absorption by the human body.     

Catalyst‐Free GaN Nanorods Synthesized by Selective Area Growth

GaN nanorod formation on Ga‐polar GaN by continuous mode metalorganic chemical vapor deposition selective area growth (MOCVD SAG) is achieved under a relatively Ga‐rich condition. The Ga‐rich condition, provided by applying a very low V/III ratio, alters the growth rates of various planes of the defined nanostructure by increasing relative growth rate of the semi‐polar tilted m‐plane {1–101} that usually is the slowest growing plane under continuous growth conditions. This increased growth rate relative to the non‐polar m‐plane {1–100} and even the c‐plane (0001), permits the formation of GaN nanorods with nonpolar sidewalls. In addition, a new growth mode, called the NH₃‐pulsed mode, is introduced, utilizing the advantages of both the continuous mode and the lower growth rate pulsed mode to form nanorods. Finally, nanorods grown under the different growth modes are compared and discussed.