Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy

X-band performance, high temperature D.C. operation and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) sapphire substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm² V⁻¹×s mobility. Maximum frequency cut-offs on the order of 8–10 GHz were achieved. D.C. performance at room temperature was >500 mA mm⁻¹, and external transconductance was >70 mS mm⁻¹. The transistors operated at test temperatures of 425°C in air.     

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

The effect of reactive ion etch (RIE) induced damage on 4H-SiC surfaces etched in fluorinated plamas has been investigated and characterized using Ni Schottky diodes and x-ray photoelectron spectroscopic surface analysis. The diodes were characterized using current-voltage, current-voltage-temperature, and capacitance-voltage measurements with near ideal forward characteristics (n=1.07) and forward current density as high as 9000 A/cm² from the control (unetched) devices. High current handling capability was observed in diodes with etched surfaces as well. Diodes with surfaces etched in CHF₃ containing plasmas showed a significant reduction in the barrier height compared to the diodes with surfaces etched in CF₄ containing plasma. Control devices exhibited high leakages when reverse biased, which is attributed to the presence of a thin (∼2 nm) oxide layer at the metal-semiconductor interface. However, under reverse bias diodes with CHF₃-etched surfaces showed improvement in leakage current compared to diodes with CF₄-etched surfaces and the control diodes.     

Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides. While the field-effect mobilities were approximately 3–5 cm²/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm²/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample.     

ELLIPTIC CURVE CRYPTOGRAPHY BASED AUTHENTICATED KEY AGREEMENT WITH PRE-SHARED PASSWORD

Based on elliptic curve Diffie-Hellman algorithm, an Elliptic Curve Authenticated Key Agreement (ECAKA) protocol with pre-shared password is proposed. Its security relies on the Elliptic Curve Discrete Logarithm Problem (ECDLP). It provides identity authentication,key validation and perfect forward secrecy, and it can foil man-in-the-middle attacks.     

Modular and Versatile Spatial Functionalization of Tissue Engineering Scaffolds through Fiber‐Initiated Controlled Radical Polymerization

Native tissues are typically heterogeneous and hierarchically organized, and generating scaffolds that can mimic these properties is critical for tissue engineering applications. By uniquely combining controlled radical polymerization (CRP), end‐functionalization of polymers, and advanced electrospinning techniques, a modular and versatile approach is introduced to generate scaffolds with spatially organized functionality. Poly‐ε‐caprolactone is end functionalized with either a polymerization‐initiating group or a cell‐binding peptide motif cyclic Arg‐Gly‐Asp‐Ser (cRGDS), and are each sequentially electrospun to produce zonally discrete bilayers within a continuous fiber scaffold. The polymerization‐initiating group is then used to graft an antifouling polymer bottlebrush based on poly(ethylene glycol) from the fiber surface using CRP exclusively within one bilayer of the scaffold. The ability to include additional multifunctionality during CRP is showcased by integrating a biotinylated monomer unit into the polymerization step allowing postmodification of the scaffold with streptavidin‐coupled moieties. These combined processing techniques result in an effective bilayered and dual‐functionality scaffold with a cell‐adhesive surface and an opposing antifouling non‐cell‐adhesive surface in zonally specific regions across the thickness of the scaffold, demonstrated through fluorescent labelling and cell adhesion studies. This modular and versatile approach combines strategies to produce scaffolds with tailorable properties for many applications in tissue engineering and regenerative medicine.     

Time-optimal control of power systems requiring multiple switchingsof series capacitors

Time-optimal control of switchable series or shunt capacitors requiring only a single switching has been proposed for damping power system swings resulting from large disturbances. This strategy is useful for a switchable series capacitor with a high compensation rating relative to the transmission system. In this paper, the general case of time-optimal control of series capacitors requiring multiple switchings is investigated. The strategy is applicable to a switchable series capacitor with a low compensation rating relative to the transmission system. It is illustrated for a single-machine infinite-bus system and an interconnected system. Suboptimal capacitor-switching control schemes are also investigated     

Large-scale system testing of a power system dynamic equivalencingprogram

This paper presents the results of applying the EPRI Dynamic Equivalencing Program to a large-scale system test case of the New York Power Pool. The effects of coherent generator selection, network reduction, generator aggregation, and generator modeling on the accuracy of the reduced models are investigated     

NdYVO_4晶体的偏振激发荧光光谱及其LD泵浦激光特性

分别利用π和σ偏振光激发，测量并对比了ＮｄＹＶＯ４晶体的非偏振及偏振荧光光谱。研究了ＬＤ泵浦ＮｄＹＶＯ４激光器的输出特性，当泵浦功率为１９００ｍＷ时，获得了１０１２ｍＷ的１０６４ｎｍ激光输出，斜效率为５３．６％。     

Fast optical Layer mesh protection using pre-cross-connected trails

Conventional optical networks are based on SONET rings, but since rings are known to use bandwidth inefficiently, there has been much research into shared mesh protection, which promises significant bandwidth savings. Unfortunately, most shared mesh protection schemes cannot guarantee that failed traffic will be restored within the 50-ms timeframe that SONET standards specify. A notable exception is the p-cycle scheme of Grover and Stamatelakis. We argue, however, that p-cycles have certain limitations, e.g., there is no easy way to adapt p-cycles to a path-based protection scheme, and p-cycles seem more suited to static traffic than to dynamic traffic. In this paper we show that the key to fast restoration times is not a ring-like topology per se, but rather the ability to pre-cross-connect protection paths. This leads to the concept of a pre-cross-connected trail or PXT, which is a structure that is more flexible than rings and that adapts readily to both path-based and link-based schemes and to both static and dynamic traffic. The PXT protection scheme achieves fast restoration speeds, and our simulations, which have been carefully chosen using ideas from experimental design theory, show that the bandwidth efficiency of the PXT protection scheme is comparable to that of conventional shared mesh protection schemes.     

InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers

We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process, we have demonstrated discrete SHBT with f/sub t/>250 GHz and DHBT with f/sub t/>230 GHz. The process eliminates the need to trade base resistance for extrinsic base/collector capacitance. Base/collector capacitance was reduced by a factor of 2 over the standard mesa device with a full overlap between the heavily doped base and subcollector regions. The low proportion of extrinsic base/collector capacitance enables further vertical scaling of the collector even in deep submicrometer emitters, thus allowing for higher current density operation. Demonstration ring oscillators fabricated with this process had excellent uniformity and yield with gate delay as low as 7 ps and power dissipation of 6 mW/CML gate. At lower bias current, the power delay product was as low as 20 fJ. To our knowledge, this is the first demonstration of high-performance HBTs and integrated circuits using a patterned implant on InP.