Effect of processing conditions on inversion layer mobility and interface state density in 4H−SiC MOSFETs

N-channel, inversion mode MOSFETs have been fabricated on 4H−SiC using different oxidation procedures, source/drain implant species and implant activation temperature. The fixed oxide charge and the field-effect mobility in the inversion layer have been extracted, with best values of 1.8×10¹² cm⁻² and 14 cm²/V-s, respectively. The interface state density, D_it close to the conduction band of 4H−SiC has been extracted from the subthreshold drain characteristics of the MOSFETs. A comparison of interface state density, inversion layer mobility and fixed oxide charges between the different processes indicate that pull-out in wet ambient after reoxidation of gate oxide improves the 4H−SiC/SiO₂ interface quality.     

Role of PbSe Structural Stabilization in Photovoltaic Cells

Semiconductor nanocrystals are promising materials for printed optoelectronic devices, but their high surface areas are susceptible to forming defects that hinder charge carrier transport. Furthermore, correlation of chalcogenide nanocrystal (NC) material properties with solar cell operation is not straightforward due to the disorder often induced into NC films during processing. Here, an improvement in long‐range ordering of PbSe NCs symmetry that results from halide surface passivation is described, and the effects on chemical, optical, and photovoltaic device properties are investigated. Notably, this passivation method leads to a nanometer‐scale rearrangement of PbSe NCs during ligand exchange, improving the long‐range ordering of nanocrystal symmetry entirely with inorganic surface chemistry. Solar cells constructed with a variety of architectures show varying improvement and suggest that triplet formation and ionization, rather than carrier transport, is the limiting factor in singlet fission solar cells. Compared to existing protocols, our synthesis leads to PbSe nanocrystals with surface‐bound chloride ions, reduced sub‐bandgap absorption and robust materials and devices that retain performance characteristics many hours longer than their unpassivated counterparts.     

Binary Controls on Interfacial Magnetism in Manganite Heterostructures

The complex interfacial correlations provide new routes toward tunable functionalities. Here, the wide range of tunabilities for magnetic properties are presented, including Curie temperature (from 245 to 320 K), coercive field (from 2 to 205 Oe), and saturated magnetic moment (from 0.9 to 2.8 µ_B Mn^?1), in a 9‐unit‐cell La_2/3Sr_1/3MnO₃ (LSMO) layer via modifying interfacial boundary conditions. Moreover, the LSMO/PbTiO₃‐based multilayers and superlattices that consist of PbTiO₃/LSMO/NdGaO₃ and PbTiO₃/LSMO/PbTiO₃ interfaces are characterized by two distinct Curie temperatures and coercive fields. The results reveal the feasibility of the interface‐resolved strategy based on boundary modification in fabricating potential devices with multiple accessible states for information storage. The wide‐range modulations on magnetic properties at LSMO/titanate interfaces are explained in terms of binary controls arising from the oxygen octahedral coupling (OOC) and magnetoelectric coupling (MEC). The results not only shed some light on understanding interfacial correlations in oxide heterostructures, but also pave an alternative path for exploring multiple accessible states in all‐oxide‐based electronic devices.     

Editorial: Big Data Innovation for Sustainable Cognitive Computing

Mobile Networks and Applications -     

High efficiency,high switching speed,AlGaAs/GaAs P-HEMT DC–DC converter for integrated power amplifier modules

This paper presents a high efficiency, high switching frequency DC–DC buck converter in AlGaAs/GaAs technology, targeting integrated power amplifier modules for wireless communications. The switch mode, inductor load DC–DC converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of negative coupling on the steady state and transient response of the converter is given. The coupling factor is selected to achieve a maximum power efficiency under a given duty cycle with a minimum penalty on the current ripple performance. The DC–DC converter is implemented in 0.5 μm GaAs p-HEMT process and occupies 2 × 2.1 mm² without the output network. An 8.7 nH filter inductor is implemented in 65 μm thick top copper metal layer, and flip chip bonded to the DC–DC converter board. The integrated inductor achieves a quality factor of 26 at 150 MHz. The proposed converter converts 4.5 V input to 3.3 V output for 1 A load current under 150 MHz switching frequency with a measured power efficiency of 84%, which is one of the highest efficiencies reported to date for similar current/voltage ratings.     

Approximation of dynamical time-variant systems by continuous-time recurrent neural networks

This paper studies the approximation ability of continuous-time recurrent neural networks to dynamical time-variant systems. It proves that any finite time trajectory of a given dynamical time-variant system can be approximated by the internal state of a continuous-time recurrent neural network. Given several special forms of dynamical time-variant systems or trajectories, this paper shows that they can all be approximately realized by the internal state of a simple recurrent neural network.     

Quantification of Temperature-Dependent Charge Separation and Recombination Dynamics in Non-Fullerene Organic Photovoltaics

Transient optical spectroscopy is used to quantify the temperature-dependence of charge separation and recombination dynamics in P3TEA:SF-PDI₂ and PM6:Y6, two non-fullerene organic photovoltaic (OPV) systems with a negligible driving force and high photocurrent quantum yields. By tracking the intensity of the transient electroabsorption response that arises upon interfacial charge separation in P3TEA:SF-PDI₂, a free charge generation rate constant of ≈2.4 × 10¹⁰ s⁻¹ is observed at room temperature, with an average energy of ≈230 meV stored between the interfacial charge pairs. Thermally activated charge separation is also observed in PM6:Y6, and a faster charge separation rate of ≈5.5 × 10¹⁰ s⁻¹ is estimated at room temperature, which is consistent with the higher device efficiency. When both blends are cooled down to cryogenic temperature, the reduced charge separation rate leads to increasing charge recombination either directly at the donor-acceptor interface or via the emissive singlet exciton state. A kinetic model is used to rationalize the results, showing that although photogenerated charges have to overcome a significant Coulomb potential to generate free carriers, OPV blends can achieve high photocurrent generation yields given that the thermal dissociation rate of charges outcompetes the recombination rate.     

The effects of electron-hole Coulomb interaction in semiconductorlasers

A recent many-body theory is applied to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. The results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The many-body Coulomb corrections also result in a different prediction of filamentation effects in semiconductor lasers     

Nonequilibrium many-body theory of intersubband lasers

We present a theory for intersubband lasers, based on the solution of the Maxwell-semiconductor Bloch equations for the laser field and active medium. The collision contributions are treated within the relaxation rate approximation, where the relaxation rates are determined by microscopic scattering calculations. The theory is suitable for investigating steady-state as well as dynamical laser characteristics. As examples of applications of the theory, we examine the thermal dependence of the laser output versus current density curve and the response to modulation of the injection current, for a three-subband laser. The influence of the nonparabolicity of the conduction band and Hartree-Fock many-body effects are investigated.     

Serial dark soliton for 100-gb/s applications

We analyze the performance through numerical simulations of a new modulation format: serial dark soliton (SDS) for wide-area 100-Gb/s applications. We compare the performance of the SDS with conventional dark soliton, amplitude-modulation phase-shift keying (also known as duobinary), nonreturn-to-zero, and return-to-zero modulation formats, when subjected to typical wide-area-network impairments. We show that the SDS has a strong chromatic dispersion and polarization-mode-dispersion tolerance, while maintaining a compact spectrum suitable for strong filtering requirement in ultradense wavelength-division-multiplexing applications. The SDS can be generated using commercially available components for 40-Gb/s applications and is cost efficient when compared with other 100-Gb/s electrical-time-division-multiplexing systems.