Core-referenced ratiometric fluorescent potassium ion sensors using self-assembled ultrathin films on europium nanoparticles

Nanoengineered fluorescent sensor coatings on colloidal carriers have been developed for use intracellularly. These nanosensors are fabricated via the electrostatic layer-by-layer self-assembly technique to form ultrathin polyelectrolyte films containing indicators on fluorescent nanoparticles. The fluorescent nanoparticle templates and the fluorescent indicator are chosen such that their optical properties are complementary, enabling the inert nanoparticle templates to serve as internal intensity references for the fluorescent probe. In this work, the potassium ion indicator, potassium-binding benzofuran isophthalate potassium-binding benzofuran isophthalate was immobilized within poly(styrene sulfonate)/poly(allylamine hydrochloride) films assembled on the surface of fluorescent europium nanoparticles. The indicator retains its sensitivity to potassium ions after immobilization within the films and exhibits sensitivity to increases in potassium concentration over a broad range. In addition, the sensors demonstrate excellent leaching stability, with less than 1% of loaded indicator leached after 14 days of wet storage. The core-referenced nanosensor scheme described here is a simple and elegant way to co-immobilize fluorescent indicator and intensity reference within a single nanoscale package, which may be deployed intracellularly; furthermore, the separation of fluorescent indicator from the cellular environment is attractive, as it may prevent complications due to use of liquid-phase fluorescent sensors intracellularly, such as cytotoxicity and probe compartmentalization.     

Hochdynamische Leistungsregelung eines dreiphasigen Hochleistungs-netzstromrichters zur Speisung von Gleichspannungszwischenkreisen

Übersicht In dieser Arbeit wird ein neues Regelungsverfahren für U-Netzstromrichter sehr hoher Leistung beschrieben. Die Einspeisungsschaltung besteht aus zwei GTO-Dreipunktstromrichtern, die über Dreiwicklungstransformatoren mit in Stern bzw. Dreieck geschalteten Sekundärwicklungen ans Netz geschaltet sind. Für den Betrieb als Netzstromrichter wird eine Steuerstrategie entwickelt, wobei eine möglichst geringe Verzerrung der netzseitigen Spannung unter Einhaltung der geringen zulässigen Schaltfrequenz der Ventile das Ziel ist. Die Regelung für netzfreundlichen hochdynamischen Energieaustausch zwischen Netz und Zwischenkreis ist auf der Basis der sogenannten Stromrichterflußbahn konzipiert.

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Highly dynamic control for a three-phase high power AC/DC converter

Contents This paper describes the implementation of a new control approach for a high power three-phase AC/DC converter. The converter consists of two three-level inverters connected to the line via a three-winding transformer with the secondaries connected in star and delta. The control scheme is developed to minimise the network distortion voltage while keeping the small permitted switching frequency of the valves. The control for highly dynamic exchange of energy between the network and the dc link voltage is proposed on the basis of the converter voltage space vector time integral.

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Diese Arbeit wurde von der Deutschen Forschungsgemeinschaft gefördert.     

Dielectric breakdown of a residual SF6 plasma at 3000 Kunder diatomic equilibrium

A residual plasma at 3000 K and under diatomic equilibrium is left inside an axially blown gas blast SF₆ circuit breaker after the thermal extinction of an arc. The breakdown of such a residual plasma depends on the electron generation and loss mechanisms. Altogether six ionization and chemical reactions relevant to the time scale of breakdown have been taken into account. It has been found that the critical field strength for breakdown is proportional to the pressure and is equal to 2.0 V/(m.Pa). This field strength is in agreement with the experimental results     

Advances in selective wet oxidation of AlGaAs alloys

We review the chemistry, microstructure, and processing of buried oxides converted from AlGaAs layers using wet oxidation. Hydrogen is shown to have a central role in the oxidation reaction as the oxidizing agent and to reduce the intermediate predict As₂O₃ to As. The stable oxide is amorphous (Al_xGa_1-x) ₂O₃ which has no defects along the oxide/semiconductor interfaces but can exhibit strain at the oxide terminus due to volume shrinkage. The influence of gas flow, gas composition, temperature, Al-content, and layer thickness on the oxidation rate are characterized to establish a reproducible process. Linear oxidation rates with Arrhenius activation energies which strongly depend upon AlAs mole fraction are found. The latter produces strong oxidation selectivity between AlGaAs layers with slightly differing Al-content. Oxidation selectivity to thickness is also shown for layer thickness <60 nm. Differences between the properties of buried oxides converted from AlGaAs and AlAs layers and the impact on selectively oxidized vertical cavity laser lifetime are reported     

Application of fuzzy logic in computer-aided VLSI design

Application of fuzzy logic structures in CAD of digital electronics substantially improves quality of design solutions by providing designers with flexibility in formulating goals and selecting tradeoffs. In addition, the following aspects of a design process are positively impacted by application of fuzzy logic: utilization of domain knowledge, interpretation of uncertainties in design data, and adaptation of design algorithms. We successfully applied fuzzy logic structures in conjunction with constructive and iterative algorithms for selecting of design solutions for different stages of the design process. We also introduced fuzzy logic software development tool to be used in CAD applications