Scalable phase extraction methods for phase plane motion estimation

To efficiently compute the phase difference (PD) between two complex numbers, two novel approaches are described. The problem of fast PD computation is central in many applications. As a case study, the main focus is on the phase correlation technique that is used for motion estimation. Starting from the problem statement, the system requirements are dealt with showing how PD requires a remarkable amount of computational resources. Reduced complexity techniques are then proposed and specifically tailored to suit the application needs. Each solution is completely implemented both in 0.25 mum as well as 0.13 mum CMOS. The so-called LUT-ROT exhibits noteworthy figures in terms of area occupation, delay and power dissipation, saving nearly 50% in terms of area and power when compared to recent work on this subject     

Encapsulation and Ostwald Ripening of Au and Au–Cl Complex Nanostructures in Silica Shells

We report a general template strategy for rational fabrication of a new class of nanostructured materials consisting of multicore shell particles. Our approach is demonstrated by encapsulating Au or Pt nanoparticles in silica shells. Other superstructures of these hollow shells, like dimers, trimers, and tetramers can also be formed by nanoparticle‐mediated self‐assembly. We have also used the as‐prepared multicore Au–silica hollow particles to perform the first studies of Ostwald ripening in confined microspace, in which chloride was found to be an efficient mediating ligand. After treatment with aqua regia, Au–Cl complex is formed inside the shell, and is found to be very active under in situ transmission electron microscopy observations while confined in a microcell. This aspect of the work is expected to motivate further in situ studies of confined crystal growth.     

Experimental and modeling approaches of MR behaviors under large step strains

Rheological properties of MR fluids under large step strain shear are presented in this paper. The experiments were carried out using a rheometer with parallel-plate geometry. Under the large step strain shear, MR fluids behave as nonlinear viscoelastic properties, where the stress relaxation modulus, G(t, γ), shows a decreasing trend with step strain. The experimental results indicate that G(t, γ) obeys time-strain separability. Thus, a mathematical form based on finite exponential serials is proposed to predict MR behavior. In this model, G(t, γ) is represented as the product of a linear stress relaxation, G(t), and the damping function, h(γ), i.e. G(t, γ)=G(t) h(γ). G(t) is simply represented as a three-parameter exponential serial and h(γ) has a sigmoidal form with two parameters. The parameters are identified by adopting an efficient optimization method proposed by Stango et al. The comparison between the experimental results and the model-predicted values indicates that this mathematical model can accurately predict MR behavior.     

我国道路石油沥青标准变更及产品生产应用的回顾

回顾我国50 a来道路石油沥青标准的变更及产品生产应用情况。随着我国炼制原油品种的增加和原油性质的改变及道路建设对沥青性能不断提高的要求,我国道路沥青标准也在不断的提高,目前的道路沥青标准已达到或接近国际先进水平。标准的提高,推动了沥青生产技术水平的提高,生产技术水平的提高满足了使用要求。     

国内外聚乙烯管材树脂生产现状

介绍国内外聚乙烯管材料的开发和生产情况,以及聚乙烯管材树脂的主要生产厂家。     

On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

电信宽带LAN接入网建设中的有关问题探讨

文章介绍了采用以太网技术的宽带接入网，对目前以及网宽带接入网建设中存在的问题如安全、维护、投资和计费等进行了研究，提出了解决上述问题的建议。     

EBSP study of the annealing behavior of aluminum deformed by equal channel angular processing

Commercial purity aluminum (99.5%) was fabricated by equal channel angular pressing (ECAP) up to total accumulated strains of approx. 10. The annealing behavior of material deformed to total strains of approx. 1 and 10 was investigated, using heat treatments of 2 h at various temperatures from 100 to 500 °C. The microstructure of the annealed materials was characterized using the electron back-scatter pattern technique. A number of parameters were determined including the distribution and average values of both the boundary spacings and misorientations. For samples deformed to a total strain of 1, annealing resulted in discontinuous recrystallization. For samples deformed to a total strain of 10, annealing resulted in microstructures exhibiting characteristics of both uniform coarsening and, in a number of places, of discontinuous recrystallization. An attempt was made, based on the boundary spacing distributions, to separate these two components. The grain size after annealing was still however small, being just 6.4 μm after 2 h at 300 °C.     

选择性激光粉末烧结的成型过程研究

本文通过对选择性激光粉末烧结的成型过程的分析,讨论了粉床特性、材料热物性以及激光热载荷对成型件质量的影响,并采用有限元的方法对其三维温度场分布进行了模拟计算,