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41.
Math1 is essential for genesis of cerebellar granule neurons 总被引:1,自引:0,他引:1
N Ben-Arie HJ Bellen DL Armstrong AE McCall PR Gordadze Q Guo MM Matzuk HY Zoghbi 《Canadian Metallurgical Quarterly》1997,390(6656):169-172
42.
Laparoscopic retroperitoneal lymph node dissection is a new surgical procedure used to enhance staging in men with clinical stage I nonseminomatous germ cell tumors of the testis. The procedure has been performed in a limited number of patients at several centers with extensive laparoscopic experience. Laparoscopic retroperitoneal lymphadenectomy is a technically demanding procedure which can be successfully completed in the majority of patients. However, the risk of complications is greater than in patients who undergo standard open retroperitoneal lymph node dissection. The primary advantage of a laparoscopic approach is shortened hospitalization and rapid return to normal activity. The role of laparoscopy in the management of patients with testis malignancy has not been defined. The use of this staging procedure may help minimize the need for surveillance studies following surgery and may be best utilized in men with a lower likelihood of nodal metastases. Ultimately, prospective study in large groups of patients will be necessary to determine the role of laparoscopic retroperitoneal lymph node dissection in patients with testis cancer. 相似文献
43.
The robust Schur stability of a polynomial with uncertain coefficients will be investigated. A formula for the stability radius of a Schur polynomial is established. The result is the counterpart of [1] for linear discrete-time systems 相似文献
44.
ASTEP-BASEDCADICAPPINTEGRATIONZhengLianyu;DuPeiASTEP-BASEDCADICAPPINTEGRATION¥ZhengLianyu;DuPeiAbstractTheinformationintegrat... 相似文献
45.
烃源岩热解油的轻烃单体和正构烷烃分子碳同位素特征 总被引:2,自引:0,他引:2
采用最新引进的国际八十年代后期开发的GC-deltas气体同位素质谱仪,对几类典型烃源岩的热模拟液态烃产物-热解油进行了GC/C/MS在线(Online)碳同位素分析,获得了有关轻烃单体、正构烷烃及姥鲛烷、植烷分子的碳同位素组成数据.分析资料表明,轻烃单体、正构烷烃及姥鲛烷、植烷的碳同位素特征及分布模式能够有效地反映烃源岩的特征-母质类型、沉积环境及热成熟度等. 相似文献
46.
47.
A method for modeling and analyzing vias the multilayered integrated circuits is presented. The model is based on microwave network theory. The whole via structure is divided into cascaded subnetworks, including a vertical via passing through different layers and transitions from the microstrip line and/or striplines to the vertical via. The parameters of each subnetwork are obtained from electromagnetic field analysis. Numerical results in the frequency domain and the time domain are presented. Validation of the model has been carried out by both measurements and finite-difference-time-domain (FDTD) modeling. The results show good agreement with the measurements in the frequency range for which the components of the experimental model are within specification. The time domain simulation results also agree well with the FDTD results 相似文献
48.
A Linear Cross-Coupled Control System for High-Speed Machining 总被引:4,自引:0,他引:4
Q. Zhong Y. Shi J. Mo S. Huang 《The International Journal of Advanced Manufacturing Technology》2002,19(8):558-563
We present a linear cross-coupled controller to improve highspeed contouring accuracy independently of tracking accuracy in
a biaxial machine tool feed drive servomechanism. Unlike conventional cross-coupled controllers, the cross-coupled controller
presented here is a linear system, so it is very easy to perform the stability and steady-state error analysis, and to optimise
the controller parameters. The proposed controller is evaluated experimentally on a CNC LOM machine and compared to an uncoupled
controller and a conventional cross-coupled controller. Controller performance is evaluated for a circular contour at a feedrate
of 30 m min _1 . The experimental results show that the proposed controller can greatly reduce the contour error at large feedrates. The
linear cross-coupled controller is simple to implement and is practical. 相似文献
49.
Steel box sections are usually fabricated from flat plates which are welded at the corners. The welding process can introduce residual stresses and geometric imperfections into the sections which can influence their strength. For some thin-walled sections, large periodic geometric imperfections have been observed in manufactured sections. Subsequent investigations have indicated that the imperfections are in fact buckling deformations i.e. the box section has buckled due to welding residual stresses prior to any application of external load. The welding procedure and the behaviour of the box sections under load has been modelled using a finite element analysis that accounts for both geometric and material non-linearities. Tests have been carried out on box sections with a range of width to thickness ratios for the plate elements. Modelling has been shown to give good correlation with the test results. The conditions for buckling to take place as a result of the welding process have been established. A design method has been proposed. 相似文献
50.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献