Nonstationary Simulation Model of Absorber with Falling Film of Suspension

A nonstationary model of SO₂ absorption from a gas phase to a countercurrent falling film of absorbing slurry was developed. Laminar, wavy and turbulent film structures were considered based on published information. Resistances to the mass transfer on the gas and the liquid sides of the interphase were considered, together with chemical reactions in the liquid phase. Relevant chemical equilibria in the liquid phase were modeled. Original experimental data on the neutralization reagent dissolution rate presented as a polydispersed two‐phase system of solids and on the rate of dissolved sulfite oxidation were used. The model was verified with experimental data from a laboratory‐scale falling‐film absorber using a single vertical tube under various geometrical and operating conditions, and a very good agreement was found with the experiment. Parametric sensitivity analysis showed the critical parts of the model.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

Static energy reduction techniques for microprocessor caches

Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Near-ML multiuser detection with linear filters and reliability-based processing

The prohibitive - exponential in the number of users - computational complexity of the maximum-likelihood multiuser detector for direct-sequence code-division multiple-access communications has fueled an extensive research effort for the development of low-complexity multiuser detection alternatives. We show that we can efficiently and effectively approach the error rate performance of the optimum multiuser detector as follows. We utilize a multiuser zero-forcing or minimum mean-square error (MMSE) linear filter as a preprocessor and we establish that the output magnitudes, when properly scaled, provide a reliability measure for each user bit decision. Then, we prepare an ordered, reliability-based error search sequence of length linear in the number of users; it returns the most likely user bit vector among all visited options. Numerical and simulation studies for moderately loaded systems that permit exact implementation of the optimum detector indicate that the error rate performance of the optimum and the proposed detector are nearly indistinguishable over the whole predetection. signal-to-noise ratio range of practical interest. Similar studies for higher user loads (that prohibit comparisons with the optimum detector) demonstrate error rate performance gains of orders of magnitude in comparison with straight decorrelating or MMSE multiuser detection.     

Fringing in tubular permanent-magnet machines: Part I. Magnetic field distribution, flux linkage, and thrust force

This paper extends an analysis developed for tubular permanent-magnet machines to account for the effect of fringing associated with the finite length of the ferromagnetic armature core. The magnetic field distribution, established by using an analytical technique formulated in the cylindrical coordinate system, provides an accurate means of evaluating the effect of the fringing flux on the thrust force and the back-electromotive force. Finite-element calculations confirm the analytically derived results. In Part II of the paper, the analysis is used to predict the cogging force that results from end effects and to facilitate minimization of the force.     

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions.     

Mobile Device Security Using Transient Authentication

Mobile devices are vulnerable to theft and loss due to their small size and the characteristics of their common usage environment. Since they allow users to work while away from their desk, they are most useful in public locations and while traveling. Unfortunately, this is also where they are most at risk. Existing schemes for securing data either do not protect the device after it is stolen or require bothersome reauthentication. Transient Authentication lifts the burden of authentication from the user by use of a wearable token that constantly attests to the user's presence. When the user departs, the token and device lose contact and the device secures itself. We show how to leverage this authentication framework to secure all the memory and storage locations on a device into which secrets may creep. Our evaluation shows this is done without inconveniencing the user, while imposing a minimal performance overhead