首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   338637篇
  免费   5866篇
  国内免费   1933篇
电工技术   7549篇
技术理论   6篇
综合类   2496篇
化学工业   51809篇
金属工艺   12133篇
机械仪表   10615篇
建筑科学   10149篇
矿业工程   1656篇
能源动力   9343篇
轻工业   32743篇
水利工程   3029篇
石油天然气   5624篇
武器工业   167篇
无线电   42810篇
一般工业技术   62040篇
冶金工业   58165篇
原子能技术   5844篇
自动化技术   30258篇
  2021年   3327篇
  2020年   2438篇
  2019年   2813篇
  2018年   4368篇
  2017年   4287篇
  2016年   4364篇
  2015年   3533篇
  2014年   5776篇
  2013年   15909篇
  2012年   9022篇
  2011年   12022篇
  2010年   9615篇
  2009年   10796篇
  2008年   11169篇
  2007年   10981篇
  2006年   9907篇
  2005年   9162篇
  2004年   8720篇
  2003年   8486篇
  2002年   8377篇
  2001年   8557篇
  2000年   7988篇
  1999年   8402篇
  1998年   18357篇
  1997年   13399篇
  1996年   10613篇
  1995年   8296篇
  1994年   7571篇
  1993年   7162篇
  1992年   5493篇
  1991年   5211篇
  1990年   5052篇
  1989年   4882篇
  1988年   4743篇
  1987年   3935篇
  1986年   4061篇
  1985年   4740篇
  1984年   4303篇
  1983年   4048篇
  1982年   3621篇
  1981年   3780篇
  1980年   3465篇
  1979年   3428篇
  1978年   3230篇
  1977年   3818篇
  1976年   4860篇
  1975年   2784篇
  1974年   2663篇
  1973年   2679篇
  1972年   2218篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
61.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
62.
Since code division multiple access systems in multipath environments suffer from multiple access interference (MAI), multiuser detection schemes should be used in the receivers. Parallel interference cancellation (PIC) is a promising method to combat MAI due to its relatively low computational complexity and good performance. It is shown that the complexity of PIC is still high for realistic scenarios in terms of the symbol rate, the number of users, spreading gain, and multipath components. However, two novel methods are introduced to reduce significantly the complexity without sacrificing performance. The first approach, called reduced PIC, takes advantage of the composition of the interference to concentrate interference cancellation only on significant terms. The second approach, called differential PIC, exploits the multistage character of PIC to avoid unnecessary double calculations of certain terms in consecutive stages. It is shown that a combination of both approaches leads to a performance very close to the single-user bound whereas the complexity can be kept on the order of the conventional RAKE receiver  相似文献   
63.
64.
65.
66.
We examine the symmetry-breaking transitions in equilibrium shapes of coherent precipitates in two-dimensional (2-D) systems under a plane-strain condition with the principal misfit strain components ε* xx and ε* yy . For systems with cubic elastic moduli, we first show all the shape transitions associated with different values of t=ε* yy /ε* xx . We also characterize each of these transitions, by studying its dependence on elastic anisotropy and inhomogeneity. For systems with dilatational misfit (t=1) and those with pure shear misfit (t=−1), the transition is from an equiaxed shape to an elongated shape, resulting in a break in rotational symmetry. For systems with nondilatational misfit (−1<t<1; t ≠ 0), the transition involves a break in mirror symmetries normal to the x- and y-axes. The transition is continuous in all cases, except when 0<t<1. For systems which allow an invariant line (−1≤t<0), the critical size increases with an increase in the particle stiffness. However, for systems which do not allow an invariant line (0<t≤1), the critical size first decreases, reaches a minimum, and then starts increasing with increasing particle stiffness; moreover, the transition is also forbidden when the particle stiffness is greater than a critical value.  相似文献   
67.
68.
Depending on the spectal width of the source illuminating an interferometer, measurement procedures can utilize either the whole interferogram, or only the fringe envelope, or only the fringe quick oscillations. With an ultraband spectrum source, a simplified adaptation of the methods of Fourier transform spectroscopy yields the variations of the test-fiber propagation constant over the whole wavelength-interval of the source. Chromatic dispersion can then be computed from a single interferogram. With narrower spectrum sources, only the fringe envelopes are utilized and yield measurements of mode delay, with application to chromatic and polarization mode dispersion. In this case, however, interferograms at several wavelengths are necessary. With even narrower spectrum sources, the fringe quick oscillations provide measurements of phase shifts, related to changes in the mode propagation constant, when outside perturbations are applied to the test fiber. A direct method for measuring the third-order nonlinear susceptibilities is discussed. In this case the outside perturbation is an intense pump laser field  相似文献   
69.
A continuous phase quadrature phase shift keyed (CPQPSK) modulation technique is presented. This method utilizes a conventional QPSK modulator and a phase trajectory converter to approximate M=4, h=1/4 continuous phase signal and allows low cost, low complexity, and high rate (>1 Gbit/s) CPM modem implementation for bandwidth efficient transmission through nonlinear satellite channels. Using a communications analysis computer program it has been found that CPQPSK has 99 percent out-of-band power of 0.8R (MSK has 99 percent out-of-band power of 1.2 R where R is defined as bit rate), continuous phase trajectories, and nearly constant envelope amplitude. Simulation of realistic hardware designs indicate that the CPQPSK will require an Eb/No of 14 dB to achieve a bit error rate (BER) of 10-6. Forward error correcting techniques using block codes with an overhead of 10 percent indicate that the Eb/No requirements can be reduced to 11.2 dB for 10-6 BER  相似文献   
70.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号