Determination of the Quadrupole Splitting in Bulk n-GaAs by Warm-Up Spectroscopy

Semiconductors - We found bulk n-GaAs layers grown by liquid phase epitaxy to be irregularly stressed. Deformation created by this stress causes a small but detectable quadrupole splitting of...     

A Dynamic Inertial Weight Strategy in Micro PSO for Swarm Robots

Wireless Personal Communications - A relatively new area of research and development is Swarm Robotics. It is a part of the swarm intelligence field. In the proposed paper, we shall use swarm...     

The Electron–Phonon Interaction of Low-Dimensional and Multi-Dimensional Materials from He Atom Scattering

Atom scattering is becoming recognized as a sensitive probe of the electron–phonon interaction parameter λ at metal and metal-overlayer surfaces. Here, the theory is developed, linking λ to the thermal attenuation of atom scattering spectra (in particular, the Debye–Waller factor), to conducting materials of different dimensions, from quasi-1D systems such as W(110):H(1 × 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dimensional surfaces such as quasicrystalline 2ML-Ba(0001)/Cu(001) and d-AlNiCo(00001). Values of λ obtained using He atoms compare favorably with known values for the bulk materials. The corresponding analysis indicates in addition, the number of layers contributing to the electron–phonon interaction, which is measured in an atom surface collision.     

Cubic–Quartic Optical Solitons with Differential Group Delay for Kudryashov’s Model by Extended Trial Function

Journal of Communications Technology and Electronics - This paper implements mathematically rigorous extended trial function algorithm to address cubic–quartic optical solitons in...     

Temperature and frequency characteristics of composites with semiconductor fillers

The paper describes the results of a study on the temperature and frequency dependences of the dielectric permeability and dielectric loss tangent of composite materials composed of low density polyethylene filled with cadmium sulfide (LDPE/CdS) and indium(III) selenide (LDPE/In₂Se₃) in the temperature range of 300–450 K and a frequency range of 0–10¹⁴ Hz. It is revealed that a variation in the filler content and the effect of external factors can yield novel composite materials with desired dielectric characteristics.     

Preparation of a Near-Infrared Ray Absorption Film from N-Phenylthiocarbamoyl Chitosan Derivative

We recently observed that the decanoylation of N-phenylthiocarbamoyl chitosan (2) with a mixture of decanoic anhydride and pyridine at 60 °C for 24 h afforded N,N-(decanoyl)phenythiocarbamoyl-/2-isothiocynato chitosan decanoate (3b) rather than the expected product N,N-(decanoyl)phenylthiocarbamoyl chitosan decanoate (3a). This result suggested that some of the N,N-(decanoyl)phenylthiocarmbamoyl groups had been converted to isothiocyanate groups during the decanoylation process. The subsequent reaction of compound 3b with aniline gave N,N-(decanoyl)phenylthiocarbamoyl/N-phenylthiocarbamoyl chitosan decanoate (4) in high yield. A solution of compound 4 in CHCl₃ was then added to a solution of copper decanoate (5) in the same solvent, and the resulting mixture was cast onto a glass plate to give a cast film. The film was annealed at 200 °C in an oven to give a greenish film, which showed good near-infrared absorption characteristic in the range of 800–2200 nm.