Towards intelligent dressing

The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability.     

Radiative lifetimes of electrons and holes in a thin semiconductor layer

Radiative lifetimes of nondegenerate electrons and holes distributed uniformly in a semiconductor layer either deposited on a substrate or bounded by two dielectric media are calculated. The obtained expression takes into account the radiation reabsorbtion and interference effects and determines the dependences of the radiative lifetimes on the refractive indices of the external media and on the layer thickness.     

Self-oscillating dimmable electronic ballast

This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out.     

Impact of lead-free soldering processes on the performance of signal relay contacts

Various legislations, rules and regulations in Europe [Restrictions of the use of certain hazardous substances in electrical and electronic equipment (ROHS)] and Japan (Recycling Law for Home Electric Appliances) have either targeted restrictions or a full ban on the use of lead, to be enforced from 2001, 2005, and 2006 onwards. Next to these regulations, marketing arguments are becoming more and more important for so called "GREEN" products. Up to now, mainly tin-lead alloys have been used in electronics. The process temperatures usually applied have been in the range of 230/spl deg/C. All currently discussed lead-free alternatives for professional electronics need process temperatures which are at least 30/spl deg/C higher. In addition, the process duration is significantly longer. The combination of higher process temperatures and longer duration together results in a significant thermal stress on the precision mechanics of the relay. In order to guarantee proper functioning of the relay after the solder process with maximum process temperatures of 255/spl deg/C, the dimensional changes of the plastic parts must be less than a few micrometers in order to guarantee stable contact forces. The outgassing of the used insulating and sealing materials must be minimal in order not to pollute or contaminate the contacts. With the lead-free version of the IM relay, an identical performance and the same reliability during electrical and climatic endurance tests can be expected, even though relays were processed with typical lead-free soldering processes with temperatures up to 255/spl deg/C.     

Smooth profile generation for a tile printing machine

In this paper a digital filter is proposed for the generation of smooth set points for motion control systems. The proposed nonlinear filter produces profiles with bounded velocity and acceleration starting from rough reference signals (steps and ramps). An actual implementation of the filter for a tile printing machine is presented and experimental results are reported.     

RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

LiNbO3 optical waveguides formed in a new proton source

Proton-exchanged planar waveguides have been fabricated on Z-cut and X-cut lithium niobate crystals by using a new proton source formed by a mixture of benzoic and adipic acids. Waveguide index profiles and optical characteristics have been obtained at different values of the adipic-benzoic acid concentration ratio. The samples have been structurally characterized by Raman and infrared (IR) absorption spectroscopy and double-crystal X-ray diffraction. Good quality samples have been fabricated by using 30 mol% ratio dilution, showing very low scattering levels (<0.1 dB/cm), relatively high electrooptic coefficient (r₃₃=0.88 pm/V), and low relative percentage of interstitial protons (26%). The main factor limiting the waveguide optical properties is the substitutional-interstitial proton ratio, which can be easily controlled to produce good quality waveguides. A demonstration of the repeatability of the exchange process in the acid mixture is also provided     

A base-band NDS electrode configuration for HACT devices

Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal