Relationships between nocturnal activity, parental ratings of daytime activity and measues from the Children's Sleep Behaviour Scale.

Monitored the nocturnal activity levels of 20 boys and 20 girls (mean age 10.46 yrs) from 12:00 AM to 6:00 AM over 2 consecutive nights in their homes. Frequency of sleep-related behaviors based on retrospective parental ratings was assessed by the Children's Sleep Behavior Scale (CSBS). Children who were rated high on sleep behaviors with an observable motor component were also more active during the night, thereby validating the motor subscale of the CSBS. Nocturnal activity was associated with another CSBS-derived sleep score that included items with positive affective content, such as laughing and smiling while asleep. Children who showed bedtime resistance behaviors and complained of difficulty going to sleep were not more active during the night. Gender, age, and parental perception of daytime activity levels were not related to objective measures of nocturnal activity. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Validation of 3-D curved objects: CAD model and fabricatedworkpiece

This paper proposes a new method to describe and identify a 3-D curved object for the purpose of validating a fabricated object to the design specification. Curved 3-D objects are, in general, difficult to represent and identify because they lack distinct properties such as edges, planes, or cylindrical surfaces which are the building blocks in representing objects. In this paper, the authors propose to use principal axes of a 3-D object to establish a reference for the representation. A method of obtaining an inertia matrix from a 3-D range image is developed. The unique set of principal axes is obtained from the inertia matrix of an object with an arbitrary 3-D position and orientation, and the object can be described uniquely on these principal axes. On the principal axes, an object is described by a set of features describing the shape of the object such as spine, section size, section orientation, and section contraction. The features are used for comparing two objects for the validation purpose. The authors also propose a direct measure of similarity between two objects as a mean-squared difference of radii. As an experiment, two 3-D object models are designed through a CAD package, and fabricated objects are compared with the designed models for validation purposes     

Optoelectronic integration of a GaAs/AlGaAs bistable field effecttransistor (BISFET) and LED

The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V     

Enhancing the brightness of thin-film electroluminescent displaysby improving the emission process

AC thin film electroluminescent (ACTFEL) devices emit light laterally in addition to conventional surface emission. Because of the waveguiding in ACTFEL devices, lateral emission is stronger than surface emission. However, the former is ignored for displays. This note demonstrates that mirrors can be fabricated into substrates to reflect upward the lateral emission, which can then be summed with surface emission for displays. Use of standard silicon and thin film technology has demonstrated that the reflected lateral emission is a factor of three brighter than conventional surface emission. hence the effective efficiency of out-coupling the light has been improved for an ACTFEL device     

Enhanced high-frequency performance in a GaAs, self-aligned, n-JFETusing a carbon buried p-implant

C ion implantation has been employed, for the first time, to form the buried p-layer in GaAs, self-aligned, ion implanted JFETs. Comparable DC performance was seen for JFETs with C or Mg implants; however, C-backside JFETs showed superior high-frequency performance. High dose C-backside devices had a f_t of 28.3 GHz and a f_max of 43.2 GHz for a 0.5 μm gate length that were 28% and 46% higher, respectively, than comparable Mg-implanted JFETs. This enhancement is a result of the lower C_gs in the C-backside device resulting from he inherently low activation of the implanted C below the channel while the C still effectively compensated the tail of the Si-channel implant. This approach relaxes the trade-off between optimizing the DC and the AC performance for the buried p-implant in GaAs JFETs and MESFET's     

Transactional analysis ego state functioning, psychological distress, and client change.

Explored the construct validity of transactional analysis (TA) ego state concepts. Ego states are defined as coherent systems of thoughts, feelings, and behaviors. 65 university students seeking therapy and 95 university students not receiving therapy completed the Adjective Checklist (ACL) and the Brief Symptom Inventory (BSI). Ego state scores from the ACL correlated with BSI psychological distress in predicted directions. Four of the 5 TA ego state scores differentiated Ss seeking therapy from Ss not seeking therapy. Furthermore, ego state scores changed over the course of therapy, indicating a reduction of distress. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

The threat of optical communications

Research shows that the future capability of optical communication technology vastly exceeds the use that we make of it today. The result is that opportunities are now opening up to completely bypass large parts of established telecommunication networks with immensely powerful new networks having very different properties to the long-established ones. `Free' bandwidth may soon be a near reality with major consequences for today's network operators     

Data to frequency mappings in various MSK schemes

Minimum shift keying (MSK) is a digital modulation scheme which is suited to demanding applications requiring good bandwidth efficiency and error performance. It can be regarded as continuous phase frequency shift keying (CPFSK) with two signalling frequencies. In general, there is no unique mapping from the input data polarity to the particular signalling frequency during a given bit interval. The simplest formulation maps zeros of the data (marks) to the lower frequency, and ones (spaces) to the higher frequency. Other formulations of MSK employ more complex mappings. The article summarises the most commonly encountered mappings, then shows how to convert from one formulation to another by manipulating the input or output data. It is, therefore, possible to establish communication between different MSK modems employing different formulations of MSK by simple processing of the data     

Calculation of the parameters of evacuation systems for tanks with a liquid-gas ejector

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 6, pp. 13–15, June, 1993.