Information systems leadership

Information system (IS) leadership is a critical area for many organizations because of their increasing dependence on ISs both for operational stability and for enablement of process innovation and business strategy. IS Leadership is distinctive from leadership in general because the Chief Information Officer (CIO) is expected to combine IS technical skills with an in-depth understanding of the organization across all functions from operational to strategic. Thus, unique leadership challenges arise due to the technology/business interface. The breadth of the IS Leadership role implies that IS Leadership research needs to cover a wide range of topics concerning the role and characteristics of the CIO, the CIO's interface with the top management team, and the CIO's organizational impact. This essay discusses the distinctive aspects of IS Leadership, identifies the dominant themes in prior IS Leadership research,and introduces five papers on IS Leadership in this issue.     

Diversity improvement estimation from rain Radar databases using maximum likelihood estimation

This research examines route diversity as a fade mitigation technique in the presence of rain, for terrestrial microwave links. The improvement in availability due to diversity depends upon the complex spatio-temporal properties of rainfall. To produce a general model to predict the advantage due to route diversity it is necessary to be able to predict the correlation of rain attenuation on arbitrary pairs of microwave links. This is achieved by examination of a database of radar derived rain rate fields. Given a representative sample of rain field images, the joint rain attenuation statistics of arbitrary configurations of terrestrial links can be estimated. Existing rain field databases often yield very small numbers of high joint attenuation events. Consequently, estimates of the probability of joint high attenuation events derived from ratios of the number of occurrences can be highly inaccurate. This paper assumes that pairs of terrestrial microwave links have joint rain attenuation distributions that are bi-lognormally distributed. Four of the five distribution parameters can be estimated from ITU-R models. A maximum likelihood estimation (MLE) method is used to estimate the fifth parameter, i.e., the covariance or correlation. The predicted diversity statistics vary smoothly and yield plausible extrapolations into low probability situations.     

Low thermal resistance high-speed top-emitting 980-nm VCSELs

Increasing copper plated heatsink radii from 0 to 4 /spl mu/m greater than the mesa in vertical-cavity surface-emitting lasers (VCSELs) reduced the measured thermal resistance for a range of device sizes to values 50% lower than previously reported over a range of device sizes. For a 9-/spl mu/m diameter oxide aperture, the larger heatsink increases output power and bandwidth by 131% and 40%, respectively. The lasers exhibit a 3-dB modulation frequency bandwidth up to 9.8 GHz at 10.5 kA/cm/sup 2/. The functional dependence of thermal resistance on oxide aperture diameter indicates the importance of lateral heat flow to mesa sidewalls.     

A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.     

Electrical characterization of poly(amide-imide) for application in organic field effect devices

The admittance spectra and current–voltage (I–V) characteristics are reported of metal–insulator–metal (MIM) and metal–insulator–semiconductor (MIS) capacitors employing cross-linked poly(amide–imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan δ values as low as 7 × 10⁻³ over most of the range. Except at the lowest voltages, the I–V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell–Wagner frequency response from which the transverse bulk hole mobility was estimated to be ∼2 × 10⁻⁵ cm² V⁻¹s⁻¹ or ∼5 × 10⁻⁸ cm² V⁻¹s⁻¹ depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be ∼5 × 10¹⁰ cm⁻² eV⁻¹ or ∼9 × 10¹⁰ cm⁻² eV⁻¹ again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices.     

Saturation intensity and time response of InGaAs-InGaP MQW opticalmodulators

We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7±0.1) kW/cm² for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations     

Solution Processing Route to Multifunctional Titania Thin Films: Highly Conductive and Photcatalytically Active Nb:TiO2

This paper reports the synthesis of highly conductive niobium doped titanium dioxide (Nb:TiO₂) films from the decomposition of Ti(OEt)₄ with dopant quantities of Nb(OEt)₅ by aerosol‐assisted chemical vapor deposition (AACVD). Doping Nb into the Ti sites results in n‐type conductivity, as determined by Hall effect measurements. The doped films display significantly improved electrical properties compared to pristine TiO₂ films. For 5 at.% Nb in the films, the charge carrier concentration was 2 × 10²¹ cm^?3 with a mobility of 2 cm² V^–1 s^–1 . The corresponding sheet resistance is as low as 6.5 Ω sq^–1 making the films suitable candidates for transparent conducting oxide (TCO) materials. This is, to the best of our knowledge, the lowest reported sheet resistance for Nb:TiO₂ films synthesized by vapour deposition. The doped films are also blue in colour, with the intensity dependent on the Nb concentration in the films. A combination of synchrotron, laboratory and theoretical techniques confirmed niobium doping into the anatase TiO₂ lattice. Computational methods also confirmed experimental results of both delocalized (Ti⁴⁺) and localized polaronic states (Ti³⁺) states. Additionally, the doped films also functioned as photocatalysts. Thus, Nb:TiO₂ combines four functional properties (photocatalysis, electrical conductivity, optical transparency and blue colouration) within the same layer, making it a promising alternative to conventional TCO materials.     

Photon-assisted capacitance–voltage study of organic metal–insulator–semiconductor capacitors

The results are reported of a detailed investigation into the photoinduced changes that occur in the capacitance–voltage (C–V) response of an organic metal–insulator–semiconductor (MIS) capacitor based on the organic semiconductor poly(3-hexylthiophene), P3HT. During the forward voltage sweep, the device is driven into deep depletion but stabilizes at a voltage-independent minimum capacitance, C_min, whose value depends on photon energy, light intensity and voltage ramp rate. On reversing the voltage sweep, strong hysteresis is observed owing to a positive shift in the flatband voltage, V_FB, of the device. A theoretical quasi-static model is developed in which it is assumed that electrons photogenerated in the semiconductor depletion region escape geminate recombination following the Onsager model. These electrons then drift to the P3HT/insulator interface where they become deeply trapped thus effecting a positive shift in V_FB. By choosing appropriate values for the only disposable parameter in the model, an excellent fit is obtained to the experimental C_min, from which we extract values for the zero-field quantum yield of photoelectrons in P3HT that are of similar magnitude, 10^?5 to 10^?3, to those previously deduced for π-conjugated polymers from photoconduction measurements. From the observed hysteresis we deduce that the interfacial electron trap density probably exceeds 10¹⁶ m^?2. Evidence is presented suggesting that the ratio of free to trapped electrons at the interface depends on the insulator used for fabricating the device.     

Cross-cultural comparison of organizational media evaluation and choice

Managers working in four countries reported the richness of five media, equivocality of 11 situations, preferred media for each situation, and cultural values. The richness and equivocality measures were reliable and unidimensional. Face-to-face was ranked as most, and business memos least, rich. Only E-mail and telephone preferences were significantly correlated with richness. Media preferences for face-to-face and telephone for each situation were highly correlated with the situations' equivocality. Respondents from collectivist countries rated the telephone as less rich, and the business memo as richer, than did respondents from individualist countries.     

The growth of prebreakdown cavities in silicone fluids and thefrequency of the accompanying discharge pulses

Measurements have been made of prebreakdown cavities in silicone fluids, and of the current pulses that accompany cavity growth. These experiments were carried out in silicone fluids of 0.65, 10, 100 and 1000 cS viscosity. Cavity growth, driven by the electrostatic field, is limited at low viscosities by inertia, and at high viscosities by viscous drag. The electrostatic force on the cavity wall is related to the local field and to the space charge density in the liquid adjacent to the cavity. We are concerned with the relationship between the electrostatic force and the cavity growth, and with the discharges that accompany cavity growth. Discharges occur in well-defined pulse trains: the first pulse in a train generates the cavity, and subsequent pulses are due to discharges within the cavity. Knowing the scaling laws for cavity growth we can use the time between the first and second pulses to estimate the cavity size when the first cavity discharge occurs; this gives a cavity diameter of ~5 to 7 μm. The next pulse cannot occur until the charge from the previous discharge has dispersed. We find that the time between pulses Δt is strongly viscosity dependent; at high viscosities the average time between pulses at is proportional to fluid-viscosity, but in the low viscosity limit the dependence approaches η^1/3. To explain this viscosity dependence we consider three mechanisms: (1) a decrease in charge density due to increase in cavity size; (2) ion detrapping from the cavity wall and drift in the applied field; and (3) diffusion of an impurity species to the cavity surface, charge exchange to create a mobile ion, and its subsequent drift in the field. Our experimental results are consistent with the cavity expansion model, but there is evidence of diffusion effects in low viscosity liquids, and with ion-drift at high viscosities