首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2124篇
  免费   97篇
  国内免费   10篇
电工技术   28篇
综合类   1篇
化学工业   188篇
金属工艺   30篇
机械仪表   46篇
建筑科学   36篇
能源动力   24篇
轻工业   40篇
水利工程   19篇
石油天然气   1篇
无线电   190篇
一般工业技术   197篇
冶金工业   1261篇
原子能技术   7篇
自动化技术   163篇
  2023年   17篇
  2022年   14篇
  2021年   25篇
  2020年   19篇
  2019年   35篇
  2018年   34篇
  2017年   37篇
  2016年   38篇
  2015年   24篇
  2014年   29篇
  2013年   72篇
  2012年   43篇
  2011年   66篇
  2010年   49篇
  2009年   56篇
  2008年   30篇
  2007年   47篇
  2006年   44篇
  2005年   45篇
  2004年   31篇
  2003年   23篇
  2002年   19篇
  2001年   16篇
  2000年   10篇
  1999年   62篇
  1998年   367篇
  1997年   225篇
  1996年   165篇
  1995年   67篇
  1994年   63篇
  1993年   89篇
  1992年   18篇
  1991年   25篇
  1990年   23篇
  1989年   25篇
  1988年   29篇
  1987年   27篇
  1986年   24篇
  1985年   19篇
  1983年   4篇
  1982年   10篇
  1981年   9篇
  1980年   12篇
  1978年   5篇
  1977年   36篇
  1976年   69篇
  1975年   7篇
  1969年   5篇
  1966年   3篇
  1965年   3篇
排序方式: 共有2231条查询结果,搜索用时 31 毫秒
81.
82.
83.
This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic control, e.g., near ideal subthreshold slope (/spl sim/ 63 mV/dec), low drain-induced barrier lowering (/spl sim/ 10 mV/V), and with I/sub ON//I/sub OFF/ ratio of /spl sim/10/sup 6/. High drive currents of /spl sim/ 1.5 and /spl sim/1.0 mA//spl mu/m were achieved for 180-nm-long nand p-FETs, respectively. It is verified that the threshold voltage of GAA FETs is independent of substrate bias due to the complete electrostatic shielding of the channel body.  相似文献   
84.
The breakdown phenomena in SiO/sub x/N/sub y/ (EOT=20 /spl Aring/) gate dielectric under a two- stage constant voltage stress in inversion mode are physically analyzed with the aid of transmission electron microscopy. The results show that dielectric-breakdown-induced epitaxy (DBIE) remains as one of the major failure defects responsible for gate dielectric breakdown evolution even for a stress voltage as low as 2.5 V. Based on the results, the same failure mechanism i.e., presence of DBIE would be responsible for the degradation in ultrathin gate dielectrics for gate voltage below 2.5 V. It is believed that DBIE will be present in MOSFETs failed at nominal operating voltage.  相似文献   
85.
Three-Parameter Model for Debonding of FRP Plate from Concrete Substrate   总被引:1,自引:0,他引:1  
Concrete beams retrofitted with bonded fiber reinforced plastic (FRP) plates often fail by debonding of the plate from the concrete surface. To predict the failure load in design, a proper debonding model is required. As debonding is a nonlinear process involving material softening, it can be analyzed once the interfacial shear (τ) versus sliding (s) relationship is known. Recent experimental results indicate that the simplest τ-s relationship should involve three parameters: the maximum shear stress for debonding to initiate, the initial residual stress right after debonding occurs, and a parameter governing the reduction of shear stress with sliding. In this paper, a FRP debonding model based on these three parameters is developed. The applicability of the model is verified through comparison with experimental results. Through a systematic parametric study, the effect of various material and geometric properties on the debonding process is investigated. Implications to the design of FRP strengthened members are highlighted.  相似文献   
86.
The electro-elastic characteristics of clamped rectangular piezoelectric laminated plates were analytically investigated. A fully covered electrode piezoelectric layer was laminated on an elastic layer to form a nonsymmetrical laminated plate. Using the electro-elastic theory with the Kirchhoff-Love hypothesis, formulation of analyses for mechanical, electrical, and electromechanical characteristics of the laminae are presented. Numerical analysis was carried out using the extended Kantorovich method to yield eigenvalues and eigenfunctions. Theoretical predictions of dynamic characteristics were validated by comparing results with finite element analysis data. The calculated natural frequencies are presented in easy-to-use figures that are useful for sensor and actuator design in microelectromechanical systems (MEMS).  相似文献   
87.
LetRbe a Hilbertian domain and letKbe its fraction field. Letψ(x1, …, xny) be a quantifier free arithmetical formula overR. We may also takeψ(x1, …, xny) to be an arithmetical formula overK[x1, …, xn] and write it asψ(y). In this paper we show that ifRhas enough non-units and x1xn y ψ(x1, …, xny), called an n  sentence, is true inR, then y ψ(y) is true inK[x1, …, xn]. Also, ifR=K[T], whereKis an infinite integral domain andx1xn y ψ(x1, …, xn, y)is true inR, then y ψ(y) is true inR[x1, …, xn]. These results are applied to find the upper and lower bounds of the time complexities of various decision problems on diophantine equations with parameters and arithmetical sentences. Some of the results are: 1. The decision problem of sentences and diophantine equations with parameters over the ring of integers of a global field are co-NP-complete. 2. The decision problem of sentences over the ring of integers of a global field is NP-complete. 3. LetKbe an infinite domain, the time complexities of the decision problems of equations with parameters and sentences over the polynomial ringK[t] are polynomial time reducible to factoring polynomials overK. 4. The decision problem of sentences over all algebraic integer rings is in P. 5. The decision problem of sentences over all integral domains with characteristic 0 is in P. 6. The time complexity of the decision problem of sentences over all integral domains is polynomial time reducible to factoring integers overZand factoring polynomials over finite fields.  相似文献   
88.
The accuracy of single-beam dose profiles used in the algorithm of the Gamma Knife treatment planning system (Leksell GammaPlan) is verified. EGS4 Monte Carlo calculation was employed to calculate the dose distributions of single-beams in a spherical water phantom with diameter 160 mm. The beams were directed to the center of the phantom. Collimators of 4, 8, 14, and 18 mm sizes were studied. The single-beam dose profiles provided by Elekta (Manufacturer of Leksell Gamma Knife) were excellently consistent with the results of Monte Carlo for the 4, 14, and 18 mm collimators. The maximum discrepancy was less than 3% at all radial distances. For the 8 mm collimator, the maximum discrepancy was 8% in the relative dose in the radial distance range from 4.3 mm to 5.2 mm. Excellent agreement in dose profiles along x, y, and z axes for all collimator helmets by summing over all 201 sources was observed between the cases using the default single-beam dose profiles and the calculated Monte Carlo results, except for the 8 mm collimator helmet along z axis. Such difference may however be too small to give a clinical significance.  相似文献   
89.
The purpose of this study was (i) to determine whether pure fumonisin B1 could be incorporated into, recovered, and detected by high-pressure liquid chromatographic analysis from the semipurified Oregon test diet (OTD) used in rainbow trout feeding studies, and (ii) to determine if the incorporated fumonisin B1 was biologically available using the change in free sphingoid bases in liver, kidney, and serum as a mechanism-based biomarker. The results indicate that fumonisin is not easily quantified in the OTD. Recoveries ranged from 12 to 81% of the calculated concentrations based on the fumonisin B1 added to the OTD. However, the fumonisin B1 in the OTD was readily absorbed and biologically active as evidenced by marked increases in free sphinganine in liver, kidney, and serum. The magnitude of the increase in free sphinganine at 100 ppm in the OTD was comparable to that known to be associated with liver toxicity in rats, pigs, and ponies.  相似文献   
90.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号