Performance of uprated substations in contaminated environments

Uprated substations have proven to be a viable economic alternative to rebuilding in order to increase power system capacity. The key economic factor in uprated designs is the use of lower than traditional insulation margins in high voltage substations. The experience of these uprated substations has been good and insulation design procedures for uprated substations have been developed to show other engineers how to take advantage of this design alternative. While these design procedures and other publications including the results of actual tests have given ample evidence of the success of the uprated designs, it has been noted that several areas need more study and testing. Among those areas which need further study are the effects of the dynamic forces caused by higher fault currents in the uprated substations and the ability of the reduced creepage distances of the uprated design to withstand pollution severity. This study covers the pollution severity issue by examining the results of flashover tests on the uprated substation insulators under various contamination conditions. The tests, which were done at the EPRI Power Deliver Center at Lenox, USA, are believed to be the only flashover tests ever conducted with uprated insulators. As might be expected, the uprated design is shown to be very sensitive to pollution severity. Sites chosen for uprating should include a pollution severity assessment as part of the design review     

MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD

The design and operation of multiple-quantum-well (MQW) wavelength-tunable distributed Bragg reflector (DBR) InGaAs QW lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area MOCVD are presented. Uncoated devices exhibit CW threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices also exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibited high extinction ratios of 40 dB at a modulator bias of 1.25 V.     

Equivalence of generalized joint signal representations ofarbitrary variables

Joint signal representations (JSRs) of arbitrary variables generalize time-frequency representations (TFRs) to a much broader class of nonstationary signal characteristics. Two main distributional approaches to JSRs of arbitrary variables have been proposed by Cohen (see Time-Frequency Analysis, Englewood Cliffs, NJ, Prentice Hall, 1995 and Proc. SPIE 1566, San Diego, 1991) and Baraniuk (see Proc. IEEE Int. Conf. Acoust., Speech Signal Processing, ICASSP'94, vol.3, p.357-60, 1994). Cohen's method is a direct extension of his original formulation of TFRs, and Baraniuk's approach is based on a group theoretic formulation; both use the powerful concept of associating variables with operators. One of the main results of the paper is that despite their apparent differences, the two approaches to generalized JSRs are completely equivalent. Remarkably, the JSRs of the two methods are simply related via axis warping transformations, with the broad implication that JSRs with radically different covariance properties can be generated efficiently from JSRs of Cohen's method via simple pre- and post-processing. The development in this paper, which is illustrated with examples, also illuminates other related issues in the theory of generalized JSRs. In particular, we derive an explicit relationship between the Hermitian operators in Cohen's method and the unitary operators in Baraniuk's approach, thereby establishing the relationship between the two types of operator correspondences     

Growth and optical characterization of strained CdZnTe/ CdTe quantum wells

We have grown strained Cd_1-xZn_xTe(x ≈ 0.2)/CdTe single and multiple quantum wells by molecular beam epitaxy. GaAs was used as a substrate. The well widths were systematically increased until the critical thickness was exceeded. Low-temperature (liquid helium) photoluminescence (PL) spectroscopy was used to characterize the films. Two prominent PL peaks were observed: one arising from the quantum well and the other from the barrier material. The energy of the quantum well luminescence is consistent with theory when strain is included. The critical layer thickness for the CdTe quantum wells was found to be between 150 and 175 å, in agreement with the model of Matthews and Blakeslee.     

Integratable, high speed buried ridge DFB lasers fabricated on semi-insulating substrates

The fabrication of buried ridge DFB lasers on semi-insulating substrates is described. A novel contacting mechanism was employed to give a series resistance of less than 4 Omega . Devices were fabricated at both 1.3 and 1.53 mu m with lasing thresholds as low as 16 mA. Single longitudinal mode operation was achieved with SMSR greater than 30 dB at both wavelengths. The structure gives an inherently low capacitance, which together with low threshold currents, low series resistance and fabrication on SI substrates makes these devices suitable for integration and high speed applications.<>     

Phase error correcting vector modulator for personal communications network (PCN) transceivers

A technique is reported for correcting phase errors in vector modulators for application in PCN (personal communication network) transceivers. The technique uses an AM demodulation process to extract the phase error from the output signal, and uses the capability of direct digital frequency synthesisers to predistort the phase of the inphase and quadrature components separately. The phase predistortion method can achieve accuracies of less than 0.05 degrees phase error, which can be further improved by increasing the number of bits in the synthesis.<>     

Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

DLTS measurements have been performed on InGaAsN. Four hole traps have been identified in 1.05 eV, p-type InGaAsN and the removal of a midgap trap (0.5 eV) during annealing has been correlated with improved bulk material properties. Improvements in MOCVD growth conditions resulted in a reduction of trap density in 1.05 eV, p-type InGaAsN. Increased indium and nitrogen composition has been correlated with higher defect concentrations in p-type InGaAsN. Two electron traps have been identified in 1.15 eV, n-type InGaAsN and annealing was found to reduce the density of the shallow electron trap.     

Corrosive Wear in Wet Ore Grinding Systems

JOM - Wear processes in ball and rod mills have recently received increased attention in order to increase efficiency and conserve grinding media. Direct removal of metal from the grinding media...     

Misreading liberalisation and privatisation: The case of the US energy utilities in Europe

In response to energy market liberalisation and privatisation initiatives promoted by the EU and other European states in the 1990s, a large number of US energy utilities expanded their activities in Europe, mainly through acquisitions. The size of their investment was, a decade later, matched by the ensuing scale of their retreat, wealth destruction and often forced exit. Combining interviews, industry studies, published financial data and company reports, this article examines critically their strategy and, in light of widespread failures, seeks to answer the question of what went wrong. It is argued that mistakes might have been avoided through greater appreciation of how market liberalisation evolves given changing government priorities and general sovereign risk.     

The installation and support of internationally distributed equipment for people with dementia

This paper describes the evaluation and support of assistive technology designed to increase the independence of people with dementia. Devices were evaluated by people with dementia in their own homes. Working with and supporting people with dementia requires relational skills not normally needed by installers and technical supporters.